RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F32G08ABCABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AECABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AECABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AJAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	DUAL			R-PDSO-G48							Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AKCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AKCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AMCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				137438953472 bit			8K		30	260	SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AMCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F256G08AUCABH3-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel				-40 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F256G08AUCABH3-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel				0 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified				274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F2G08ABBFAH4:F	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM			R-PBGA-B63							Not Qualified				2147483648 bit			2K				SLC NAND TYPE	.00005 Amp			25 ns		NO
N25Q064A13E14D0E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24				100000 Write/Erase Cycles	108 MHz		Not Qualified		SPI		67108864 bit							NOR TYPE	.0001 Amp
M29W128GSH70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL			R-PDSO-G56							Not Qualified				134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSL70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL			R-PDSO-G56							Not Qualified				134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
PC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	1.7 V			e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
SST39VF3202C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT-BLOCK		e1	40	260	NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
N25Q128A13B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A13BF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	8 mm			3
N25Q128A13BSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q128A13TF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	TOP	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	8 mm			3
N25Q128A13TSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI	TOP	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q128A23B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A23BF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	8 mm			3
N25Q128A23BSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
RC28F640P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	TIN LEAD SILVER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified			TOP	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
NAND512W3A2SN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX8	64M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				536870912 bit	2.7 V			e4	30	260	SLC NAND TYPE		18.4 mm			3
JS28F128P30BF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL			R-PDSO-G56		2 V	1.2 mm			14 mm	Not Qualified			BOTTOM	134217728 bit	1.7 V		8	e3			NOR TYPE	.000055 Amp	18.4 mm	YES	75 ns	1.8	NO
PC28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
MTFDCAE001SAF-1D1IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		1GX8	1G	-40 Cel					UNSPECIFIED			R-XXMA-X		5.25 V	9.7 mm			26.6 mm					8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDCAE001SAF-1D1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		1GX8	1G	0 Cel					UNSPECIFIED			R-XXMA-X		5.25 V	9.7 mm			26.6 mm					8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDCAE002SAF-1B1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		2GX8	2G	0 Cel					UNSPECIFIED			R-XXMA-X		5.25 V	9.7 mm			26.6 mm					17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDCAE004SAF-1B1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		4GX8	4G	0 Cel					UNSPECIFIED			R-XXMA-X		5.25 V	9.7 mm			26.6 mm					34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
SST39LF401C-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39LF402C-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39VF402C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1		R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
RC28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	TIN LEAD SILVER	YES	BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V		16/32	e0			NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
M45PE10S-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			131072 words				8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		75 MHz	3.9 mm		23 ms			1048576 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		4.9 mm			2.7
M45PE10S-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			131072 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL			R-PDSO-N8		3.6 V	1 mm		75 MHz	5 mm		23 ms			1048576 bit	2.7 V						NOR TYPE		6 mm			2.7
TC58NVG1S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm				Not Qualified				2147483648 bit	2.7 V		2K					.00005 Amp	18.4 mm		25 ns	3.3	NO
N25Q256A13EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	268435456 words				1	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.3			20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V				30	260	NOR TYPE	.00025 Amp	8 mm
N25Q256A13EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			30	260	NOR TYPE	.0001 Amp	8 mm			3
NAND128W3AABN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX8	16M	-40 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm					134217728 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm		35 ns	3
MTFDDAC128MAM-1J1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										MICROELECTRONIC ASSEMBLY															UNSPECIFIED			R-XXMA-N			9.7 mm			69.85 mm												MLC NAND TYPE		100.2 mm			5
MTFDDAC256MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										MICROELECTRONIC ASSEMBLY															UNSPECIFIED			R-XXMA-N			9.7 mm			69.85 mm												MLC NAND TYPE		100.2 mm			5
MTFDDAK128MAM-1J1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										MICROELECTRONIC ASSEMBLY															UNSPECIFIED			R-XXMA-N			7 mm			69.85 mm												MLC NAND TYPE		100.2 mm			5
MTFDDAK256MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										MICROELECTRONIC ASSEMBLY															UNSPECIFIED			R-XXMA-N			7 mm			69.85 mm												MLC NAND TYPE		100.2 mm			5
MTFDDAK512MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD										MICROELECTRONIC ASSEMBLY															UNSPECIFIED			R-XXMA-N			7 mm			69.85 mm												MLC NAND TYPE		100.2 mm			5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.