RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC28F640P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	67108864 bit	2.3 V		8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
SST39VF3201-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	1K	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3201-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
PC28F640P30TF65B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F512P30BFB	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,20		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified			BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT	16	e1			NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
PC28F512M29EWHG	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm					536870912 bit	2.7 V			e1			NOR TYPE		13 mm		100 ns	3
RC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	1.7 V			e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
RC28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified			TOP	1073741824 bit	1.7 V	TOP BOOT	16	e1	30	235	NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
PC28F256P30BFF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
MX25L1606EXCI-12G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	Flash Memories	20	1 mm	85 Cel		2MX8	2M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	86 MHz	6 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3
N25Q512A13G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		512MX1	512M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm			SPI		536870912 bit	2.7 V			e1	30	260	NOR TYPE	.0005 Amp	8 mm			3
N25Q512A13GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm			SPI		536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0005 Amp	10.3 mm			3
JS28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e3			NOR TYPE	.00021 Amp	18.4 mm	YES	105 ns	2.7	NO
PC28F512P30EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified				536870912 bit	1.7 V	SYMMETRICAL BLOCKS	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
MTFC4GACAANA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm					34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			3.3
NAND512R3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B63		1.95 V	1.05 mm			9 mm					536870912 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
PF48F3000P0ZBQEA	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM			R-PBGA-B88		2 V	1.2 mm			8 mm				BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT			30	260			10 mm		65 ns	1.8
N25Q00AA13GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	1073741824 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.41		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1GX1	1G	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V				30	260	NOR TYPE	.0002 Amp	10.3 mm			3
RC28F512M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	TIN LEAD SILVER	YES	BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V		16/32	e0			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
N25Q00AA13G1240E	Micron Technology	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, LOW PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.3 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V			e1	30	260	NOR TYPE	.0002 Amp	8 mm			3
N25Q064A11EF640E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL			R-PDSO-N8		2 V	1 mm		108 MHz	5 mm					67108864 bit	1.7 V				30	260	NOR TYPE		6 mm			1.8
N25Q064A11ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					67108864 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			1.8
N25Q512A11G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B24		2 V	1.2 mm		108 MHz	6 mm					536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
N25Q512A11GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					536870912 bit	1.7 V				30	260	NOR TYPE		10.3 mm			1.8
SM28VLT32SHKN	Texas Instruments	FLASH	MILITARY	14	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		160 mA	2097152 words	1.9	YES	1.9,3.3	16	FLATPACK	SOP14,1,40		Flash Memories	0.11	1.02 mm	210 Cel		2MX16	2M	-55 Cel			GOLD		DUAL		HARDWARE	R-CDFP-G14		3.6 V	3.05 mm	1000 Write/Erase Cycles	1 MHz	8 mm	Not Qualified		SPI		33554432 bit	3.1 V			e4			NOR TYPE		20 mm			1.8	YES
SM28VLT32SKGD3	Texas Instruments	FLASH	MILITARY	150	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		160 mA	2097152 words	1.9	YES		16	UNCASED CHIP						210 Cel		2MX16	2M	-55 Cel					UPPER		HARDWARE	R-XUUC-N150		3.6 V		1000 Write/Erase Cycles	1 MHz	4.6 mm			SPI		33554432 bit	3.1 V				NOT SPECIFIED	NOT SPECIFIED			11.509 mm			1.8	YES
MX25L12845GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		104 MHz	7.52 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 MBIT X 1		e3					10.3 mm			3
M29W256GH70N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	268435456 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
N25Q064A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		108 MHz	6 mm					67108864 bit	1.7 V			e1			NOR TYPE		8 mm			2.7
N25Q256A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V			e1			NOR TYPE	.00025 Amp	8 mm			3
N25Q256A13ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	8 ms	SPI		268435456 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
M29DW256G70NF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm					268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
M29DW256G7ANF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm					268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
N25Q016A11ESC40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			8	SMALL OUTLINE					1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-G8		2 V	1.75 mm		108 MHz	3.9 mm					16777216 bit	1.7 V				30	260	NOR TYPE		4.9 mm			1.8
N25Q512A83G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm			SPI		536870912 bit	2.7 V			e1			NOR TYPE	.0005 Amp	8 mm			3
N25Q512A83GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm			SPI		536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0005 Amp	10.3 mm			3
N25Q064A13ESFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q256A83E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm					268435456 bit	2.7 V			e1			NOR TYPE		8 mm			3
N25Q256A83ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	2.7 V						NOR TYPE		10.3 mm			3
N25Q256A83ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
SST25PF020B-80-4C-QAE	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	2097152 words			2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm	Not Qualified		SPI		2097152 bit	2.3 V			e3			NOR TYPE	.00003 Amp	6 mm
JS28F512M29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	MATTE TIN	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				536870912 bit	2.7 V		16/32	e3	30	260	NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	2.7	YES
N25Q128A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A13EF740E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.9 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	6 mm			3
N25Q128A13ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q256A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE		e1			NOR TYPE	.00002 Amp	8 mm			1.8
N25Q256A11EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		2 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.