RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F2G16ABAEAWP-IT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	2.7	NO
MT29F2G16ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	2.7	NO
N25Q256A33EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V				30	260	NOR TYPE		8 mm			3
N25Q256A33EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
N25Q256A73ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm				268435456 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
M25P16-VMC6G	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,32		Flash Memories	20	.8 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	75 MHz	3 mm	Not Qualified	SPI		16777216 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	4 mm			3
M25P20-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	2.3 V				30	260	NOR TYPE	.000005 Amp	4.9 mm			2.7
M25P20-VMP6GB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.9 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	SPI		2097152 bit	2.3 V				30	260	NOR TYPE	.000005 Amp	6 mm			2.7
JS28F128P33BF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V		8		30	260	NOR TYPE	.002 Amp	18.4 mm	YES	20 ns	3	NO
MT29F16G08AJADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			17179869184 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F2G08ABBEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F2G16ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F4G08ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F4G16ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MT29F4G16ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MT29F4G16ABADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F4G16ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns		NO
MT29F4G16ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		1K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F4G16ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F4G16ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F8G08ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F8G08ADBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		1GX8	1G	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F8G16ADADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	536870912 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			8589934592 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F8G16ADBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
PC28F320J3F75B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			33554432 bit	2.7 V		4/8		30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	3	NO
N25Q512A13GSFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	67108864 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.5 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm		SPI		536870912 bit	2.7 V						NOR TYPE	.0005 Amp	10.3 mm
N25Q512A83G12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V						NOR TYPE		8 mm			3
N25Q512A83G12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V						NOR TYPE		8 mm			3
N25Q032A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A11EF740E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		R-PDSO-N8		2 V	.9 mm		108 MHz	5 mm				134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		6 mm			1.8
N25Q128A31EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	6 mm				134217728 bit	1.7 V						NOR TYPE		8 mm			1.8
M25P16-VMF6PBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.3 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified	SPI		16777216 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	10.3 mm			2.7
M25P16-VMN3YPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm			2.7
M25P40-VMC6GB	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL			15 mA	524288 words			2.5/3.3	8	SMALL OUTLINE	SOLCC8,.12,32		Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4194304 bit					30	260	NOR TYPE	.00001 Amp				2.7
M25P40-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			15 mA	524288 words			2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4194304 bit					30	260	NOR TYPE	.00001 Amp				2.7
M29W640GB7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm			BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
MX66L51235FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		128MX4	128M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified	SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		e3			NOR TYPE	.00004 Amp	10.3 mm			3
MX66L51235FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		128MX4	128M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	8 mm			3
M25P10-AVMN6PYA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE						85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDSO-G8		3.6 V			50 MHz					1048576 bit	2.3 V				30	260	NOR TYPE					2.7
M29W512GH7AN6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				536870912 bit	2.7 V			e3					18.4 mm		80 ns	2.7
N25Q512A13G1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V			e1			NOR TYPE		8 mm			1.8
MT29F2G08AADWP-ET:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm							2147483648 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
W25Q16DVSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	4 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5 mm			2.7
W25Q256FVEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	268435456 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	6 mm	Not Qualified	SPI		268435456 bit	2.7 V						NOR TYPE	.000025 Amp	8 mm			3
W25Q64FVZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			8388608 words				8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.2	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm	Not Qualified	SPI		67108864 bit	3 V							.00005 Amp	6 mm
JS28F640P33BF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified		BOTTOM	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e3			NOR TYPE	.002 Amp	18.4 mm	YES	70 ns	3	NO
MT29F1G08ABBDAH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V			e1			SLC NAND TYPE		11 mm		25 ns	1.8
MT29F2G08ABBFAH4-IT:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				2147483648 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.