RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W010B70K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	128KX8	128K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	2.7 V			e3			NOR TYPE	.0001 Amp	13.97 mm		70 ns	2.7	YES
M29W010B70N6E	STMicroelectronics	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	128KX8	128K	-40 Cel	8	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			1048576 bit	2.7 V			e3/e6	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm		70 ns	2.7	YES
MX29GL320EBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	100 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK	8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29F400BB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL		R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F400BT70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL		R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
AT25SF041-SSHDHR-T	Adesto Technologies	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words				1	SMALL OUTLINE						125 Cel	4MX1	4M	-40 Cel					DUAL		R-PDSO-G8	3.6 V			85 MHz					4194304 bit	2.5 V											2.7
IS25LP064D-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel	8MX8	8M	-40 Cel			Tin (Sn)		DUAL		R-PDSO-N8	3.6 V	.8 mm		166 MHz	6 mm				67108864 bit	2.7 V			e3	30	260			8 mm			3
MX25U51245GXDI54	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm		SPI		536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1					NOR TYPE	.00018 Amp	8 mm			1.8
MTFC128GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm				1099511627776 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC128GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm				1099511627776 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC128GAPALNS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm				1099511627776 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC128GAPALNS-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm				1099511627776 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC16GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm				137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC16GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm				137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC32GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm				274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC32GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm				274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC32GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	105 Cel	32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm		200 MHz	14 mm				274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC32GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	85 Cel	32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm		200 MHz	14 mm				274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC64GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm				549755813888 bit	2.7 V				30	260			13 mm			2.7
MTFC64GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm				549755813888 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC64GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm				549755813888 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC64GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	85 Cel	64GX8	64G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm		200 MHz	14 mm				549755813888 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC64GASAONS-AITES	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	95 Cel	64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.461 mm		52 MHz	11.5 mm				549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GAMALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm				68719476736 bit	2.7 V			e1	30	260			18 mm			2.7
W25N512GWEIR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel	64MX8	64M	-40 Cel					DUAL		R-PDSO-N8	1.95 V	.8 mm		104 MHz	6 mm				536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			1.8
IS25WP01G-RILE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel	128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B24	1.95 V	1.4 mm		104 MHz	6 mm				1073741824 bit	1.7 V								8 mm			1.8
MTFC16GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20				.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B169	3.6 V	1.364 mm		52 MHz	14 mm				137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC16GLWDM-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm		52 MHz	11.5 mm				137438953742 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC16GLWDQ-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm				137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20				.5 mm	85 Cel	32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B169	3.6 V	1.364 mm		52 MHz	14 mm				274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GJWDQ-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm				274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC4GLGDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.374 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC4GMWDM-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm		52 MHz	11.5 mm				34359738368 bit	2.7 V						NAND TYPE		13 mm
MTFC4GMWDQ-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm				34359738368 bit	2.7 V						NAND TYPE		18 mm
MTFC8GLGDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.374 mm		52 MHz	11.5 mm				68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm		52 MHz	11.5 mm				68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm		52 MHz	11.5 mm				68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDQ-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm				68719476736 bit	2.7 V						NAND TYPE		18 mm
MTFC8GLWDQ-3MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm				68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GJWDQ-4LAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.4 mm		52 MHz	14 mm				274877906944 bit	2.7 V						NAND TYPE		18 mm
MTFC4GLMDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm
MTFC8GLWDQ-3LAATA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	105 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm				68719476736 bit	2.7 V						NAND TYPE		18 mm
MTFC8GLWDQ-3LAITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.4 mm		52 MHz	14 mm				68719476736 bit	2.7 V						NAND TYPE		18 mm
MX25L51245GXDJ-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel	128MX4	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		104 MHz	6 mm				536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MTFDDAV1T0TDL-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY							1TX8	1T						UNSPECIFIED		R-XXMA-X									8796093022208 bit							TLC NAND TYPE
MTFDDAV256TDL-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY							256GX8	256G						UNSPECIFIED		R-XXMA-X									2199023255552 bit							TLC NAND TYPE
MTFDDAV512TDL-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words				8	MICROELECTRONIC ASSEMBLY							512GX8	512G						UNSPECIFIED		R-XXMA-X									4398046511104 bit							TLC NAND TYPE
MTFDHBK1T0TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD		ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY						95 Cel	1TX8	1T	-40 Cel					SINGLE		R-XSMA-N									8796093022208 bit							TLC NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.