RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDHBK256TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words			8	MICROELECTRONIC ASSEMBLY					95 Cel		256GX8	256G	-40 Cel					SINGLE			R-XSMA-N								2199023255552 bit						TLC NAND TYPE
MTFDHBK512TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			549755813888 words			8	MICROELECTRONIC ASSEMBLY					95 Cel		512GX8	512G	-40 Cel					SINGLE			R-XSMA-N								4398046511104 bit						TLC NAND TYPE
MTFDHBL064TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			68719476736 words			8						105 Cel		64GX8	64G	-40 Cel					BOTTOM			R-XBGA-B								549755813888 bit						TLC NAND TYPE
MTFDHBL128TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			137438953472 words			8						95 Cel		128GX8	128G	-40 Cel					BOTTOM			R-XBGA-B								1099511627776 bit						TLC NAND TYPE
MTFDHBL128TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			137438953472 words			8						105 Cel		128GX8	128G	-40 Cel					BOTTOM			R-XBGA-B								1099511627776 bit						TLC NAND TYPE
MTFDHBL256TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			274877906944 words			8						95 Cel		256GX8	256G	-40 Cel					BOTTOM			R-XBGA-B								2199023255552 bit						TLC NAND TYPE
MTFDHBL256TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			274877906944 words			8						105 Cel		256GX8	256G	-40 Cel					BOTTOM			R-XBGA-B								2199023255552 bit						TLC NAND TYPE
MTFDHBL512TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			549755813888 words			8						95 Cel		512GX8	512G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-XBGA-B								4398046511104 bit			e1	30	260	TLC NAND TYPE
MTFDHBL512TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			549755813888 words			8						105 Cel		512GX8	512G	-40 Cel					BOTTOM			R-XBGA-B								4398046511104 bit						TLC NAND TYPE
MTFDHBM1T0TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words			8						95 Cel		1TX8	1T	-40 Cel					BOTTOM			R-XBGA-B								8796093022208 bit						TLC NAND TYPE
MTFDHBM1T0TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words			8						105 Cel		1TX8	1T	-40 Cel					BOTTOM			R-XBGA-B								8796093022208 bit						TLC NAND TYPE
MX25U12832FZNI02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	1.65 V					NOR TYPE	.000005 Amp	6 mm			1.8
SST26VF016BEUI-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		1	SMALL OUTLINE, LOW PROFILE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-C48	3.6 V	1.68 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI	16777216 bit	2.7 V					NOR TYPE	.000025 Amp	4.89 mm			3
SST26VF032BEUI-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3		1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI	33554432 bit	2.7 V					NOR TYPE	.000045 Amp	5.26 mm			3
SQF-CM8V4-240G-ECE	Advantech	FLASH MODULE		75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			257698037760 words	3.3		8	MICROELECTRONIC ASSEMBLY					85 Cel		240GX8	240G	-40 Cel					SINGLE			R-XSMA-N75		7.3 mm	3000 Write/Erase Cycles	200 MHz	22 mm			2061584302080 bit						TLC NAND TYPE		80 mm			3.3
MX25U12832FMI02	Macronix	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8		8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm		SPI	134217728 bit	1.65 V					NOR TYPE	.000005 Amp	10.3 mm			1.8
MX30LF1G28AD-TI	Macronix	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	50 mA	134217728 words	3	NO	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		10	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	DUAL			R-PDSO-G48	3.6 V	1.2 mm	60000 Write/Erase Cycles		12 mm	.00002 ms		1073741824 bit	2.7 V	2K				SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
MT29F64G08AJABAWP-IT:BTR	Micron Technology	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	8589934592 words	3.3	NO	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		10	.5 mm	85 Cel		8GX8	8G	-40 Cel	16K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm			68719476736 bit	2.7 V	4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	3.3	NO
MTFC8GAMALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel					BOTTOM			R-PBGA-B153	3.6 V	1.1 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V					NAND TYPE		13 mm			2.7
MTFC128GAPALNS-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	3-STATE	128GX8	128G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B153	3.6 V	1.1 mm		200 MHz	11.5 mm			1099511627776 bit	2.7 V		e1	30	260	NAND TYPE		13 mm			2.7
MTFC4GLDEA-0MWTTR	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3.6 V	.8 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V		e1			MLC NAND TYPE		13 mm			3.3	NO
MTFC16GAPALBH-AATTR	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3.6 V	1.2 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V		e1	30	260	NAND TYPE		13 mm
MTFC4GLGDQ-AITATR	Micron Technology	FLASH		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel		4GX8	4G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B100	3.6 V	1.4 mm		52 MHz	14 mm			34359738368 bit	2.7 V		e1	30	260	MLC NAND TYPE		18 mm				NO
MTFC4GLMDQ-AITATR	Micron Technology	FLASH CARD		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B100	3.6 V	1.4 mm		52 MHz	14 mm			34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm			2.7
MTFC8GACAALT-4MITTR	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40			1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100	3.6 V	1.2 mm		52 MHz	14 mm			68719476736 bit	2.7 V		e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MTFC8GAMALBH-AITTR	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20	4	5	.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B153	3.6 V	1.2 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V		e1	30	260	NAND TYPE		13 mm			2.7	NO
MTFC8GLWDM-AITATR	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words			8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3.6 V	1.2 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V		e1	30	260	NAND TYPE		13 mm			2.7
MT25QU256ABA8E12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI	268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00018 Amp	8 mm			1.8
MT25QU256ABA8ESF-0AATTR	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.5 mm		SPI	268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	10.3 mm			1.8
MT28EW256ABA1HPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8	20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM			R-PBGA-B56	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm	.00006 ms		268435456 bit	2.7 V	16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
MT28EW256ABA1LPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8	20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM			R-PBGA-B56	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm	.00006 ms		268435456 bit	2.7 V	16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
MT35XL01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL02GCBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	2147483648 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	2147483648 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL256ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL256ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm			3
MT35XU01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V		e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V		e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V		e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V		e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V		e1	30	260	NOR TYPE		8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.