RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28EW256ABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		70 ns	3
MT28EW256ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM			R-PBGA-B56		3.6 V	1 mm			7 mm				268435456 bit	2.7 V								9 mm		70 ns	3
MT28EW512ABA1HPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B56		3.6 V	1 mm			7 mm				536870912 bit	2.7 V								9 mm		95 ns	3
MT28EW512ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B56		3.6 V	1 mm			7 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			9 mm		95 ns	3
MT29F2G08ABAEAH4-AATX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		256MX8	256M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm				2147483648 bit	2.7 V						SLC NAND TYPE		11 mm			3.3
MT29F2G08ABAEAWP-AATX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP48,.8,20		Flash Memories		.8 mm	105 Cel		256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
SST26WF064C-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI		67108864 bit	1.65 V			e3			NOR TYPE	.000015 Amp	6 mm			1.8
SST26WF064C-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	1.8			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		67108864 bit	1.65 V			e3			NOR TYPE	.000015 Amp	5.26 mm			1.8
RC28F128P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
MTFDDAK060MBD-2AH12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		60GX8	60G	-40 Cel					SINGLE			R-XSMA-N22		5.5 V	7.2 mm			69.85 mm				515396075520 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK120MBD-2AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		120GX8	120G	-40 Cel					SINGLE			R-XSMA-N22		5.5 V	7.2 mm			69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK128MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		128GX8	128G	-40 Cel					SINGLE			R-XSMA-N22		5.5 V	7.2 mm			69.85 mm				1099511627776 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK240MBD-2AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		240GX8	240G	-40 Cel					SINGLE			R-XSMA-N22		5.5 V	7.2 mm			69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK256MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		256GX8	256G	-40 Cel					SINGLE			R-XSMA-N22		5.5 V	7.2 mm			69.85 mm				2199023255552 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MT28FW02GBBA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT29F2G08ABBEAH4:ETR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		256MX8	256M	0 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm				2147483648 bit	1.7 V			e1			SLC NAND TYPE		11 mm			1.8
MT29F2G16ABDHC:DTR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		128MX16	128M	0 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm				2147483648 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MTFDDAK032SBD-1AH12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				34359738368 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		32GX8	32G	-40 Cel					SINGLE			R-XSMA-X22		5.5 V	7.2 mm			69.85 mm				274877906944 bit	4.5 V	LENGTH_MAX			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		100.45 mm			5
MTFDDAT064SBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY						85 Cel		64GX8	64G	-40 Cel					DUAL			R-XDMA-N52		3.46 V	2.4 mm			29.85 mm				549755813888 bit	3.14 V						SLC NAND TYPE		50.8 mm			3.3
IS25LQ040B-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm				4194304 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			3
MT29F1G08ABADAWP-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			3.3
MT29F1G08ABADAWP-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
MT29F2G08AADWP:DTR	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		256MX8	256M	0 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
MT29F2G16ABDHC-ET:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX16	128M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm				2147483648 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F4G01AAADDHC-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4294967296 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4GX1	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm		50 MHz	10.5 mm				4294967296 bit	2.7 V			e1			SLC NAND TYPE		13 mm			3.3
M25P40-VMN6TPBATR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words	2.7			8	SMALL OUTLINE					1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm				4194304 bit	2.3 V				30	260	NOR TYPE		4.9 mm			3
MT29F16G08ABACAWP-ITZ:CTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				17179869184 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			2.7
MT29F1G01AAADDH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm				1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm			2.7
MT29F1G08ABADAH4:DTR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		128MX8	128M	0 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm				1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm			3.3
MT29F2G08ABAEAWP-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			2.7
N25Q128A23BSF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm			BOTTOM	134217728 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
MT29F2G08ABAEAH4-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm				2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm			3.3
MTFC16GAKAECN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		13 mm			2.7
MTFC16GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100	3	3.6 V	1.2 mm			14 mm				137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC32GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			14 mm				274877906944 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC64GAKAEEY-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		64GX8	64G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm			2.7
IS21ES04G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V			e1	10	260			13 mm			3.3
IS21ES04G-JQLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100	3	3.6 V	1.4 mm			14 mm				34359738368 bit	2.7 V			e1	10	260			18 mm			3.3
IS21ES08G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm				68719476736 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm			3.3	NO
IS21ES16G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm				137438953472 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm			3.3	NO
IS21ES32G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm				274877906944 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm			3.3	NO
IS22ES04G-JCLA1	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V			e1	10	260			13 mm			3.3
N25Q032A13EF4A0FTR	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.8 mm	125 Cel		32MX1	32M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.6 mm		108 MHz	3 mm				33554432 bit	2.7 V						NOR TYPE		4 mm			3
MT25QL256ABA8E12-1SAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QL256ABA8E14-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QL256ABA8ESF-MSIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MT29F1G16ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		64MX16	64M	0 Cel					BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm				1073741824 bit	1.7 V						SLC NAND TYPE		13 mm			1.8
IS34ML01G084-TLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.