RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F256G08CECCBH6-6R:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel					BOTTOM		R-PBGA-B152	3.6 V	1 mm			14 mm			274877906944 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F256G08CEECBH6-12:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel					BOTTOM		R-PBGA-B152	3.6 V	1 mm			14 mm			274877906944 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F512G08CKCCBH7-6R:C	Micron Technology	FLASH	COMMERCIAL	152	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		64GX8	64G	0 Cel					BOTTOM		R-PBGA-B152	3.6 V	1.2 mm			14 mm			549755813888 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F512G08CKECBH7-12:C	Micron Technology	FLASH	COMMERCIAL	152	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		64GX8	64G	0 Cel					BOTTOM		R-PBGA-B152	3.6 V	1.2 mm			14 mm			549755813888 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
AT25DF041A-SHF-B	Adesto Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			20 mA	524288 words			2.5/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8			100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI	4194304 bit							NOR TYPE	.00002 Amp			2.7
THGBMHG7C2LBAIL	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY						85 Cel		16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153	3.6 V							137438953472 bit	2.7 V										2.7
THGBMHG8C4LBAIR	Toshiba	FLASH	OTHER	169	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY						85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B169	3.6 V							274877906944 bit	2.7 V										2.7
IS25LP128F-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.49 mm		SPI	134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	10.31 mm		3
IS25WP128F-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		30 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1.95 V	.8 mm	100000 Write/Erase Cycles	166 MHz	5 mm		SPI	134217728 bit	1.65 V	ALSO OPERATES WITH 133MHZ @ 1.65VMIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000075 Amp	6 mm		1.8
IS25WP512M-RHLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	1.65 V			e1	10	260	NOR TYPE	.00026 Amp	8 mm		1.8
IS25WP512M-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	1.95 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm		SPI	536870912 bit	1.65 V			e3	10	260	NOR TYPE	.00014 Amp	10.31 mm		1.8
MTFDDAT128MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			137438953472 words				8	MICROELECTRONIC ASSEMBLY						85 Cel		128GX8	128G	-40 Cel					SINGLE		R-XSMA-N								1099511627776 bit							TLC NAND TYPE
MTFDDAT256MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY						85 Cel		256GX8	256G	-40 Cel					SINGLE		R-XSMA-N								2199023255552 bit							TLC NAND TYPE
W25Q16JLZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		R-PDSO-N8	3.6 V	.8 mm		104 MHz	5 mm			16777216 bit	2.7 V	IT ALSO OPERATES AT FREQUENCY 50 MHZ AT SUPPLY VOLTAGE 2.3 TO 2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		6 mm		2.7
MT29F1G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified		1073741824 bit	2.7 V		2K	e1			SLC NAND TYPE	.0001 Amp	11 mm	25 ns	3.3	NO
SFCF0128H1BK1MT-I-MS-553-SMA	Swissbit Ag	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			134217728 words	3.3			8	UNCASED CHIP						85 Cel		128MX8	128M	-40 Cel					UPPER		R-XUUC-N50	3.63 V	4.1 mm			36.4 mm			1073741824 bit	2.97 V	ALSO OPERATES AT 5V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		42.8 mm	300 ns	3.3
SFCF0512H1BK1MT-I-MS-553-SMA	Swissbit Ag	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			536870912 words	3.3			8	UNCASED CHIP						85 Cel		512MX8	512M	-40 Cel					UPPER		R-XUUC-N50	3.63 V	4.1 mm			36.4 mm			4294967296 bit	2.97 V	ALSO OPERATES AT 5V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		42.8 mm	300 ns	3.3
SFCF1024H1BK2MT-I-MO-553-SMA	Swissbit Ag	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			1073741824 words	3.3			8	UNCASED CHIP						85 Cel		1GX8	1G	-40 Cel					UPPER		R-XUUC-N50	3.63 V	4.1 mm			36.4 mm			8589934592 bit	2.97 V	ALSO OPERATES AT 5V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		42.8 mm	300 ns	3.3
MT29F1G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm			1073741824 bit	1.7 V						SLC NAND TYPE		11 mm		1.8
MT25QU128ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm			134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
MT29F2G16ABAEAWP-AAT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		128MX16	128M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm			2147483648 bit	2.7 V						SLC NAND TYPE		18.4 mm		3.3
W25Q256JWBIM	Winbond Electronics	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm		1.8
W25Q256JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm		1.8
W25Q256JWEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm		1.8
W25Q256JWFIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	1.95 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.31 mm		1.8
W25Q256JWPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	6 mm		1.8
M29W320DB80ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm			33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm	80 ns	3
NAND512R3A2SZAXE	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	64094208 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1.05 mm			9 mm	Not Qualified		512753664 bit	1.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm	45 ns	1.8	NO
NAND512W3A2SNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		512753664 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	18.4 mm	35 ns	3	NO
NAND512W3A2SZAXE	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1.05 mm			9 mm	Not Qualified		512753664 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm	35 ns	3	NO
NAND512R3A2SZA6F	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	64094208 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1.05 mm			9 mm	Not Qualified		512753664 bit	1.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm	45 ns	1.8	NO
NAND256W3A2BZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA55,8X12,32		Flash Memories		.8 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B55	3.6 V	1.05 mm			8 mm	Not Qualified		268435456 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	10 mm	45 ns	3	NO
NAND512R3A2SN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			64094208 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX8	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	1.95 V	1.2 mm			12 mm			512753664 bit	1.7 V			e3	30	260	SLC NAND TYPE		18.4 mm		1.8
NAND512R3A2SN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			64094208 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX8	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	1.95 V	1.2 mm			12 mm			512753664 bit	1.7 V			e3	30	260	SLC NAND TYPE		18.4 mm		1.8
M25P16-VMF3PB	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified	SPI	16777216 bit	2.7 V						NOR TYPE	.0001 Amp	10.3 mm		3
MT29F4G16ABADAH4-AIT:D	Micron Technology	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY						85 Cel		256MX16	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63								4294967296 bit				e1	30	260	SLC NAND TYPE				3.3
M29W640GT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm			67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	70 ns	3
MX25LM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16	3.6 V	2.65 mm		133 MHz	7.52 mm			536870912 bit	2.7 V								10.3 mm		3
MX66L2G45GXRI00	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words	3			8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.3 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	2147483648 bit	2.7 V	IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm		3
MX25UM25645GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE		1			1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		R-PDSO-G16	2 V	2.65 mm		133 MHz	7.52 mm			268435456 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm		1.8
MX25UM51245GXDIH0	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		250 MHz	6 mm			536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
MX25UM51345GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		200 MHz	6 mm			536870912 bit	1.65 V								8 mm		1.8
IS25WP256E-JLLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL		R-PDSO-N8	1.95 V	.8 mm		166 MHz	6 mm			268435456 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
MT25TL512HBA8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16	3.6 V	2.65 mm		133 MHz	7.5 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm		3
GD25Q80CTIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL		R-PDSO-G8	3.6 V	1.75 mm		120 MHz	3.9 mm			8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm		3.3
W25Q16JVSNJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL		R-PDSO-G8	3.6 V	1.75 mm		133 MHz	3.9 mm			16777216 bit	3 V				NOT SPECIFIED	NOT SPECIFIED			4.85 mm		3
IS29GL128-70SLEB	Integrated Silicon Solution	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		128MX1	128M	-40 Cel			TIN		DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm			134217728 bit	2.7 V			e3					18.4 mm	70 ns	3
IS25LQ040B-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		512KX8	512K	-40 Cel			TIN		DUAL		R-PDSO-G8	3.6 V	1.75 mm		104 MHz	3.9 mm			4194304 bit	2.3 V	CLOCK FREQUENCY FOR READ MODE 33 MHZ		e3	30	260	NOR TYPE		4.9 mm		3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.