RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
MX25V20066M1I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	3	8	SMALL OUTLINE	SOP8,.25	20	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		DUAL	HARDWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	SPI		2097152 bit	2.7 V	ALSO AVAILABLE WITH 2.3VMIN@50MHZ				NOR TYPE	.00002 Amp	4.9 mm	3
MTFC64GAPALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		68719476736 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	5	.5 mm	85 Cel		64GX8	64G	-40 Cel		BOTTOM		R-PBGA-B153	3.6 V	.8 mm		200 MHz	11.5 mm			549755813888 bit	2.7 V					NAND TYPE		13 mm
MTFC64GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		68719476736 words		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	5	1 mm	85 Cel		64GX8	64G	-40 Cel		BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm			549755813888 bit	2.7 V					NAND TYPE		18 mm
MTFC16GAPALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		17179869184 words		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	5	1 mm	105 Cel		16GX8	16G	-40 Cel		BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm			137438953472 bit	2.7 V					NAND TYPE		18 mm
MTFC32GAPALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		34359738368 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	5	.5 mm	105 Cel		32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B153	3.6 V	.8 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V					NAND TYPE		13 mm
MTFC8GAMALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		8589934592 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	5	.5 mm	85 Cel		8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B153	3.6 V	.8 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V					NAND TYPE		13 mm
MTFC8GAMALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		8589934592 words		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	5	1 mm	85 Cel		8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm			68719476736 bit	2.7 V					NAND TYPE		18 mm
MTFC128GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		137438953472 words		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20	5	.5 mm	85 Cel		128GX8	128G	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3.6 V	1.1 mm		200 MHz	11.5 mm			1099511627776 bit	2.7 V		e1	30	260	NAND TYPE		13 mm
MTFC8GAMALGT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		8589934592 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	5	.5 mm	105 Cel		8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B153	3.6 V	.8 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V					NAND TYPE		13 mm
MTFC8GAMALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		8589934592 words		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	5	1 mm	105 Cel		8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm			68719476736 bit	2.7 V					NAND TYPE		18 mm
MTFC32GAPALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		34359738368 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	5	.5 mm	85 Cel		32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B153	3.6 V	.8 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V					NAND TYPE		13 mm
MTFC32GAPALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		34359738368 words		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	5	1 mm	105 Cel		32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm			274877906944 bit	2.7 V					NAND TYPE		18 mm
MTFC32GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		34359738368 words		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	5	1 mm	85 Cel		32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm			274877906944 bit	2.7 V					NAND TYPE		18 mm
MTFDHBA480TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		515396075520 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		480GX8	480G	0 Cel		UNSPECIFIED		R-XXMA-N								4123168604160 bit						TLC NAND TYPE
MTFDHBA480TDF-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		515396075520 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		480GX8	480G	0 Cel		UNSPECIFIED		R-XXMA-N								4123168604160 bit						TLC NAND TYPE
MTFDHBE3T2TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		3518437208883 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		3.2TX8	3.2T	0 Cel		UNSPECIFIED		R-XXMA-N								28147497671065 bit						TLC NAND TYPE
MTFDHBE3T8TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		4222124650659 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		3.84TX8	3.84T	0 Cel		UNSPECIFIED		R-XXMA-N								33776997205278 bit						TLC NAND TYPE
MTFDHBE7T6TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		8444249301319 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		7.68TX8	7.68T	0 Cel		UNSPECIFIED		R-XXMA-N								67553994410557 bit						TLC NAND TYPE
MTFDHBE800TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		858993459200 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		800GX8	800G	0 Cel		UNSPECIFIED		R-XXMA-N								6871947673600 bit						TLC NAND TYPE
MTFDHBG1T9TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		2111062325329 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		1.92TX8	1.92T	0 Cel		UNSPECIFIED		R-XXMA-N								16888498602639 bit						TLC NAND TYPE
MTFDHBE3T2TDG-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		3518437208883 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		3.2TX8	3.2T	0 Cel		UNSPECIFIED		R-XXMA-N								28147497671065 bit						TLC NAND TYPE
MTFDHBE6T4TDG-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		7036874417766 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		6.4TX8	6.4T	0 Cel		UNSPECIFIED		R-XXMA-N								56294995342131 bit						TLC NAND TYPE
MTFDHBG1T9TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		2111062325329 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		1.92TX8	1.92T	0 Cel		UNSPECIFIED		R-XXMA-N								16888498602639 bit						TLC NAND TYPE
MTFDHBG3T8TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		4222124650659 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		3.84TX8	3.84T	0 Cel		UNSPECIFIED		R-XXMA-N								33776997205278 bit						TLC NAND TYPE
MTFDHBA400TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		429496729600 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		400GX8	400G	0 Cel		UNSPECIFIED		R-XXMA-N								3435973836800 bit						TLC NAND TYPE
MTFDHBA480TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		515396075520 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		480GX8	480G	0 Cel		UNSPECIFIED		R-XXMA-N								4123168604160 bit						TLC NAND TYPE
MTFDHBA960TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		1030792151040 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		960GX8	960G	0 Cel		UNSPECIFIED		R-XXMA-N								8246337208320 bit						TLC NAND TYPE
MTFDHBE1T9TDF-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		2111062325329 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		1.92TX8	1.92T	0 Cel		UNSPECIFIED		R-XXMA-N								16888498602639 bit						TLC NAND TYPE
MTFDHBE1T9TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		2111062325329 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		1.92TX8	1.92T	0 Cel		UNSPECIFIED		R-XXMA-N								16888498602639 bit						TLC NAND TYPE
MTFDHBE6T4TDG-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		7036874417766 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		6.4TX8	6.4T	0 Cel		UNSPECIFIED		R-XXMA-N								56294995342131 bit						TLC NAND TYPE
MTFDHBE7T6TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		8444249301319 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		7.68TX8	7.68T	0 Cel		UNSPECIFIED		R-XXMA-N								67553994410557 bit						TLC NAND TYPE
MTFDHBA400TDG-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		429496729600 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		400GX8	400G	0 Cel		UNSPECIFIED		R-XXMA-N								3435973836800 bit						TLC NAND TYPE
MTFDHBA800TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		858993459200 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		800GX8	800G	0 Cel		UNSPECIFIED		R-XXMA-N								6871947673600 bit						TLC NAND TYPE
MTFDHBE3T8TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		4222124650659 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		3.84TX8	3.84T	0 Cel		UNSPECIFIED		R-XXMA-N								33776997205278 bit						TLC NAND TYPE
MTFDHBE6T4TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		7036874417766 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		6.4TX8	6.4T	0 Cel		UNSPECIFIED		R-XXMA-N								56294995342131 bit						TLC NAND TYPE
MTFDHBE800TDG-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		858993459200 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		800GX8	800G	0 Cel		UNSPECIFIED		R-XXMA-N								6871947673600 bit						TLC NAND TYPE
MTFDHBE960TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		1030792151040 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		960GX8	960G	0 Cel		UNSPECIFIED		R-XXMA-N								8246337208320 bit						TLC NAND TYPE
MTFDHBG3T8TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		4222124650659 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		3.84TX8	3.84T	0 Cel		UNSPECIFIED		R-XXMA-N								33776997205278 bit						TLC NAND TYPE
MTFDHBE1T6TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		1759218604441 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		1.6TX8	1.6T	0 Cel		UNSPECIFIED		R-XXMA-N								14073748835532 bit						TLC NAND TYPE
MTFDHBE1T6TDG-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		1759218604441 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		1.6TX8	1.6T	0 Cel		UNSPECIFIED		R-XXMA-N								14073748835532 bit						TLC NAND TYPE
MTFDHBE1T9TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		2111062325329 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		1.92TX8	1.92T	0 Cel		UNSPECIFIED		R-XXMA-N								16888498602639 bit						TLC NAND TYPE
MTFDHBA960TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		1030792151040 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		960GX8	960G	0 Cel		UNSPECIFIED		R-XXMA-N								8246337208320 bit						TLC NAND TYPE
MT25QL02GCBB8E12-0SITTR	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	94 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	BOTTOM/TOP	2147483648 bit	2.7 V					NOR TYPE	.00013 Amp	8 mm	3
MTFC128GAZAQJP-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		137438953472 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		.5 mm	85 Cel		128GX8	128G	-40 Cel		BOTTOM		R-PBGA-B153	1.95 V	1 mm		200 MHz	11.5 mm			1099511627776 bit	1.7 V					NAND TYPE		13 mm	1.8
MTFC64GAZAQHD-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		68719476736 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		.5 mm	85 Cel		64GX8	64G	-40 Cel		BOTTOM		R-PBGA-B153	1.95 V	.9 mm		200 MHz	11.5 mm			549755813888 bit	1.7 V					NAND TYPE		13 mm	1.8
W25R256JVFIQ	Winbond Electronics	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	8	SMALL OUTLINE	SOP16,.4	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL	SOFTWARE	R-PDSO-G16	3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm	SPI		268435456 bit	2.7 V					NOR TYPE	.00012 Amp	10.31 mm	3
SQF-SMSM4-128G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL			137438953472 words		8	MICROELECTRONIC ASSEMBLY				70 Cel		128GX8	128G	0 Cel		SINGLE		R-XSMA-N52		4.2 mm			30 mm			1099511627776 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM2-64G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL			68719476736 words		8	MICROELECTRONIC ASSEMBLY				85 Cel		64GX8	64G	-40 Cel		SINGLE		R-XSMA-N52		4.2 mm			30 mm			549755813888 bit						MLC NAND TYPE		50.8 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.