RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S25HL512TFANHB010	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
S25HL512TDPNHB013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
S25HL512TDPNHM013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
S25HL512TFANHB013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
S25HL01GTDPMHM010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL01GTDPMHV010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL01GTDPMHV013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL01GTFAMHB013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL01GTFAMHM013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL01GTFAMHA013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL01GTFAMHB010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL01GTFAMHM010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel		128MX8	128M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00056 Amp	10.3 mm			3
S25HL512TDPMHM013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm			3
S25HL512TDPMHB010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm			3
S25HL512TDPMHB013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm			3
S25HL512TDPMHM010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	10.3 mm			3
S25HL512TDPNHM010	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
S25HL512TDPNHV010	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
S25HL512TFANHM010	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	125 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
S25HL512TFANHV013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm			3
W25Q128JVPIQTR	Winbond Electronics	FLASH	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2	1	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	134217728 bit	3 V	ALSO OPERATES AT 2.7 TO 3V @104MHZ				NOR TYPE	.00006 Amp	6 mm			3.3
S29GL064S90BHI040	Infineon Technologies	FLASH	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	2	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B48		3.6 V	1 mm	100000 Write/Erase Cycles		6.15 mm	60 ms		67108864 bit	2.7 V		8/16			NOR TYPE	.0001 Amp	8.15 mm	YES	90 ns	3	YES
SFU3064GC2AE2TO-I-LF-1A1-STD	Swissbit Ag	USB FLASH DRIVE		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS		160 mA	68719476736 words	5		8				10		85 Cel		64GX8	64G	-40 Cel					UNSPECIFIED		R-XXMA-X		5.5 V	4.5 mm			12.1 mm			549755813888 bit	4.5 V	USB 3.1 FLASH DRIVE				MLC NAND TYPE		24 mm			5
SFU3064GC2AE2TO-C-LF-1A1-STD	Swissbit Ag	USB FLASH DRIVE		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS		160 mA	68719476736 words	5		8				10		70 Cel		64GX8	64G	0 Cel					UNSPECIFIED		R-XXMA-X		5.5 V	4.5 mm			12.1 mm			549755813888 bit	4.5 V	USB 3.1 FLASH DRIVE				MLC NAND TYPE		24 mm			5
AT45DB321D-TU-SL383	Dialog Semiconductor	FLASH	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3		1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		20	.55 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm		SPI	33554432 bit	2.7 V					NOR TYPE	.00005 Amp	11.8 mm			2.7
AT45DB321D-SU-SL383	Dialog Semiconductor	FLASH	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3		1	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm		SPI	33554432 bit	2.7 V					NOR TYPE	.00005 Amp	5.29 mm			2.7
MTFC32GAZAQDW-AAT	Micron Technology	FLASH CARD	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3		8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.5 mm		200 MHz	14 mm			274877906944 bit	2.7 V					NAND TYPE		18 mm			3.3
MTFC32GAZAQDW-AATTR	Micron Technology	FLASH CARD	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3		8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.5 mm		200 MHz	14 mm			274877906944 bit	2.7 V					NAND TYPE		18 mm			3.3
MT29F4G01ABAFD12-AUT:F	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	536870912 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	10	1 mm	125 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	4294967296 bit	2.7 V	CONFIGURABLE AS 4G X 1				SLC NAND TYPE	.0001 Amp	8 mm			3.3
MT29F4G01ABBFD12-AUT:F	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	536870912 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	10	1 mm	125 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm		SPI	4294967296 bit	1.7 V	CONFIGURABLE AS 4G X 1				SLC NAND TYPE	.0001 Amp	8 mm			1.8
S25FL256SAGNFE001	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4	20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
THGAMVT0T43BAIR	Kioxia Holdings	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		135 mA	137438953472 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		128GX8	128G	-25 Cel		YES			BOTTOM		R-PBGA-B153		1.95 V	1 mm		52 MHz	11.5 mm			1099511627776 bit	1.7 V	3.3V SUPPLY IS ALSO AVAILABLE				NAND TYPE	.00104 Amp	13 mm			1.8
S29GL064S90FHI020	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm	60 ms		67108864 bit	2.7 V		8/16			NOR TYPE	.0002 Amp	13 mm	YES	90 ns	3	YES
TC58CVG2S0HRAIJ	Kioxia Holdings	FLASH	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		28 mA	524288 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	HARDWARE	R-XDSO-N8		3.6 V	.8 mm		133 MHz	6 mm		SPI	4294967296 bit	2.7 V					NAND TYPE	.00021 Amp	8 mm			3.3
SFEM064GB1ED1TO-I-6F-111-STD	Swissbit Ag	FLASH CARD	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			68719476736 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			549755813888 bit	2.7 V					TLC NAND TYPE		13 mm			3.3
SFEM256GB1ED1TO-I-8H-111-STD	Swissbit Ag	FLASH CARD	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			274877906944 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		256GX8	256G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			2199023255552 bit	2.7 V					TLC NAND TYPE		13 mm			3.3
SFEM128GB1ED1TO-I-7G-111-STD	Swissbit Ag	FLASH CARD	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			137438953472 words	3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V			200 MHz	11.5 mm			1099511627776 bit	2.7 V					TLC NAND TYPE		13 mm			3.3
AT25EU0041A-SSHN-B	Renesas Electronics	FLASH	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	524288 words	3		8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	10000 Write/Erase Cycles	108 MHz	3.9 mm		SPI	4194304 bit	2.3 V	ALSO OPERATES WITH 1.65V MIN @ 80MHZ				NOR TYPE	.000014 Amp	4.925 mm			3
S79FS01GSFABHB213	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	SERIAL	SYNCHRONOUS		200 mA	134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	260	NOR TYPE	.0006 Amp	8 mm			1.8
S25FL256SAGNFE000	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4	20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
S25FL256SAGNFE003	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4	20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V					NOR TYPE	.0003 Amp	8 mm			3
EM32FQYHY-BA000-2	Delkin Devices	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM	HARDWARE	R-PBGA-B156			1 mm			11.5 mm			274877906944 bit						TLC NAND TYPE		13 mm			3.3	NO
MTFDKCC960TFR-1BC1ZABYY	Micron Technology	FLASH MODULE		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					1030792151040 words			8	MICROELECTRONIC ASSEMBLY					70 Cel		960GX8	960G	0 Cel					UNSPECIFIED		R-XXMA-X									8246337208320 bit						TLC NAND TYPE
MTSD128AHC6MS-1WTCS	Micron Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			137438953472 words	3.3		8	UNCASED CHIP					85 Cel		128GX8	128G	-25 Cel					UPPER		R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm		SPI	1099511627776 bit	2.7 V					TLC NAND TYPE		15 mm			3.3
MTSD064AHC6MS-1WTCS	Micron Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			68719476736 words	3.3		8	UNCASED CHIP					85 Cel		64GX8	64G	-25 Cel					UPPER		R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm		SPI	549755813888 bit	2.7 V					TLC NAND TYPE		15 mm			3.3
MTSD032AHC6MS-1WTCS	Micron Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words	3.3		8	UNCASED CHIP					85 Cel		32GX8	32G	-25 Cel					UPPER		R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm		SPI	274877906944 bit	2.7 V					TLC NAND TYPE		15 mm			3.3
1624092	Phoenix Contact	CONFIGURATION MEMORY		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					2147483648 words	3.3		8	UNCASED CHIP	DIE OR CHIP				85 Cel		2GX8	2G	-40 Cel					UPPER		R-XUUC-N		3.6 V							17179869184 bit	2.7 V					NOR TYPE					3.3
MT29F2G01ABAGDSF-IT:G	Micron Technology	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3.3		8	SMALL OUTLINE	SOP16,.4		10	1.27 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	2147483648 bit	2.7 V					SLC NAND TYPE	.00005 Amp	10.3 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.