RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL032N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL032N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL064N11FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL064N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL064N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL064N90FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		67108864 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL032N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL032N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL032N11FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
S29GL032N90FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm		33554432 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL032N90FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	2MX16	2M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		33554432 bit	2.7 V	NOR TYPE		13 mm	90 ns	3	NO
S29GL064N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel	4MX16	4M	-40 Cel	NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm		67108864 bit	1.65 V	NOR TYPE		13 mm	110 ns	3	NO
AP-MSD08GIA-1HTM	Apacer Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			8589934592 words			8	UNCASED CHIP					85 Cel	8GX8	8G	-40 Cel			UPPER		R-XUUC-N8		3.6 V	1.1 mm		208 MHz	11 mm	SPI	68719476736 bit	2.7 V	MLC NAND TYPE		15 mm
ASFC8G31M-51BIN	Alliance Memory	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel	NO		BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm		68719476736 bit	2.7 V	MLC NAND TYPE		13 mm		3	NO
MTFC4GLGDQ-AIT	Micron Technology	FLASH	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	4GX8	4G	-40 Cel	NO		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V	MLC NAND TYPE		18 mm			NO
MTFC32GJGDQ-AIT	Micron Technology	FLASH	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	32GX8	32G	-40 Cel	NO		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		274877906944 bit	2.7 V	MLC NAND TYPE		18 mm			NO
ASFC4G31M-51BINTR	Alliance Memory	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	4GX8	4G	-40 Cel	NO		BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm		34359738368 bit	2.7 V	MLC NAND TYPE		13 mm		3	NO
S25HL01GTDPMHB010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL01GTDPMHB013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL01GTDPMHI010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	85 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL01GTDPMHI013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	85 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL01GTFAMHI013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	85 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL01GTFAMHV010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL01GTFAMHV013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL512TDPMHV013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TDPNHV013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm		3
S25HL512TFANHI013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	85 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm		3
S25HL512TFANHM013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	125 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm		3
S25HL01GTDPMHA013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	85 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL01GTDPMHM013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel	128MX8	128M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm		3
S25HL512TDPMHV010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TFAMHM010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TFANHV010	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm		3
S25HL512TDPMHI013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	85 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TDPNHB010	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm		3
S25HL512TDPNHI013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		25	1.27 mm	85 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm		3
S25HL512TFAMHB013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TFAMHI013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	85 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TFAMHM013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	125 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TFAMHV010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3
S25HL512TFAMHV013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		69 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4		25	1.27 mm	105 Cel	64MX8	64M	-40 Cel			DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm		3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.