RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F4G08ABADAWP-AATX:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		512MX8	512M	-40 Cel				DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				4294967296 bit	2.7 V					SLC NAND TYPE		18.4 mm			3.3
IS25LQ010B-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		128KX8	128K	-40 Cel			TIN	DUAL		R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm				1048576 bit	2.3 V		e3	30	260			4.9 mm			3
PC28F128P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V	8	e1	30	260	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
MT25QL128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		16MX8	16M	-40 Cel				BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
IS21ES04G-JCLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
IS21ES08G-JCLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel				BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
IS25LP032D-JMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel				DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm				33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
IS25LP128-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		14 mA	16777216 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		4-WIRE		134217728 bit	2.7 V						.000065 Amp	6 mm
IS25LP256D-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			8	SMALL OUTLINE					1.27 mm	105 Cel		32MX8	32M	-40 Cel				DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm				268435456 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
IS25LP512M-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		64MX8	64M	-40 Cel				DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm				536870912 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
IS25LQ025B-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		256KX1	256K	-40 Cel			TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm				262144 bit	2.3 V		e3	30	260			4.9 mm			3
IS25LQ512B-JULE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			524288 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	105 Cel		512KX1	512K	-40 Cel				DUAL		R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm				524288 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			3 mm			3
IS25WP064A-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel				DUAL		R-PDSO-N8		1.95 V	.85 mm		133 MHz	6 mm				67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
IS25WP064A-JMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		8MX8	8M	-40 Cel				DUAL		R-PDSO-G16		1.95 V	2.65 mm		133 MHz	7.49 mm				67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm			1.8
IS25WP064A-RHLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		8MX8	8M	-40 Cel				BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		133 MHz	6 mm				67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
IS25WP064A-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		8MX8	8M	-40 Cel				DUAL		R-PDSO-G16		1.95 V	2.65 mm		133 MHz	7.49 mm				67108864 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.31 mm			1.8
IS25WP256E-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel				DUAL		R-PDSO-N8		1.95 V	.8 mm		166 MHz	6 mm				268435456 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
IS25WP512M-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		64MX8	64M	-40 Cel				DUAL		R-PDSO-N8		1.95 V	.8 mm		133 MHz	6 mm				536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
IS37SML01G1-LLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX8	128M	-40 Cel				DUAL		R-PDSO-N8		3.6 V	.85 mm		104 MHz	6 mm				1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			3.3
IS37SML01G1-MLI-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE					1.27 mm	85 Cel		128MX8	128M	-40 Cel				DUAL		R-PDSO-G16		3.6 V	2.65 mm		104 MHz	7.49 mm				1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		10.31 mm			3.3
MTFC16GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V		e1	30	260			13 mm			2.7
MTFC32GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32GX8	32G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				274877906944 bit	2.7 V		e1	30	260			13 mm			2.7
EM04APGD4-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
EM04APYD3-BA000-2	Delkin Devices	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			3.3
MTFC8GAMALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				68719476736 bit	2.7 V		e1	30	260	NAND TYPE		13 mm			2.7
MTFC4GLGDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC4GMWDM-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC4GMWDQ-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			18 mm			2.7
MTFC4GLMDQ-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel				BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm			2.7
MTFC8GLWDQ-3LAITZ	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		8GX8	8G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V		e1	30	260			18 mm			2.7
MT29F64G08CFACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel				DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F32G08CBACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel				DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F32G08CBACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel				DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F64G08CFACBWP-12Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel				DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			30	260	MLC NAND TYPE		18.4 mm			3.3
6ES7954-8LE03-0AA0	Siemens	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			12582912 words	3.3			8	UNCASED CHIP								12MX8	12M					UPPER		R-XUUC-N										100663296 bit				NOT SPECIFIED	NOT SPECIFIED						3.3
RPSEMC16DA1	Panasonic	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel				BOTTOM		R-PBGA-B153	3	3.6 V	1.4 mm			11.5 mm				137438953472 bit	2.7 V					MLC NAND TYPE		13 mm			2.7
SFSD4096N1BW1MT-E-DF-111-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP						85 Cel		4GX8	4G	-25 Cel				UPPER		R-XUUC-N8		3.6 V	1 mm		50 MHz	11 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15 mm			3.3
SFSD4096N1BW1MT-I-DF-111-STD	Swissbit Ag	FLASH CARD	INDUSTRIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP						85 Cel		4GX8	4G	-40 Cel				UPPER		R-XUUC-N8		3.6 V	1 mm		50 MHz	11 mm				34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			15 mm			3.3
MT35XL01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V		e1	30	260			8 mm			3
MT35XL01GBBA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V		e1	30	260			8 mm			3
MT35XL256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V		e1	30	260			8 mm			3
MT35XL256ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V		e1	30	260			8 mm			3
MT35XL512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				536870912 bit	2.7 V		e1	30	260			8 mm			3
MT35XL512ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				536870912 bit	2.7 V		e1	30	260			8 mm			3
MT35XU02GCBA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				2147483648 bit	1.7 V		e1	30	260			8 mm			1.8
MT35XU256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.7 V		e1	30	260			8 mm			1.8
MT35XU256ABA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.7 V		e1	30	260			8 mm			1.8
MT35XU256ABA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				268435456 bit	1.7 V		e1	30	260			8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.