RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
SFSD4096N2BM1TO-E-GE-2A1-STD	Swissbit Ag	FLASH CARD	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP						85 Cel		4GX8	4G	-25 Cel					UPPER			R-XUUC-N8		3.6 V	1.1 mm		100 MHz	11 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		15 mm		3.3
SFSD4096N3BM1TO-I-GE-2B1-STD	Swissbit Ag	FLASH CARD	INDUSTRIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP						85 Cel		4GX8	4G	-40 Cel					UPPER			R-XUUC-N8		3.6 V	1.1 mm		100 MHz	11 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		15 mm		3.3
MX25L12845GM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	2.16 mm		120 MHz	5.23 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		e3					5.28 mm		3
MX25L12845GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		120 MHz	7.52 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			10.3 mm		3
MX25L12845GXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
MX25L12845GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
MX25L12845GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		120 MHz	6 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
MX25U12835FBBI-10G	Macronix	FLASH	INDUSTRIAL	23	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2			.5 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM			R-PBGA-B23		2 V	.52 mm		104 MHz					134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1			NOT SPECIFIED	NOT SPECIFIED					1.8
MX25U12835FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL			R-PDSO-G8		2 V	2.16 mm		104 MHz	5.23 mm				134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1			NOT SPECIFIED	NOT SPECIFIED			5.28 mm		1.8
MX25U12835FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM			R-PBGA-B24		2 V	1.2 mm		104 MHz	6 mm				134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1			NOT SPECIFIED	NOT SPECIFIED			8 mm		1.8
MX25U51245GXDI0A	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI	536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		1.8
MX25UM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		133 MHz	7.52 mm				536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm		1.8
MX66L1G45GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm				1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT			NOT SPECIFIED	NOT SPECIFIED			8 mm		3
W25N01GWZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		104 MHz	6 mm				1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm		1.8
W25Q256JVBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm		3.3
W25Q32JVSFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16		3.6 V	2.64 mm		133 MHz	7.49 mm				33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e3		260			10.31 mm		3
W25Q32JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		4MX8	4M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e1		260			8 mm		3
W25Q32JVZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm				33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			6 mm		3
W25Q64JVSFIM	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.31 mm		3.3
W25Q64JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		3.3
W25Q64JVZEIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		3.3
W25Q64JVZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm		3.3
W25M02GVZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1073741824 words	3			2	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1GX2	1G	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	6 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm		3
W25N01GVSFIG	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.64 mm		104 MHz	7.49 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		10.31 mm		3
MT25TL256HBA8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm		3
W25Q128JVEIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	8 mm		3.3
W25Q16JVZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm				16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			6 mm		3
W25Q256JVEIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm		3.3
W25Q256JVFIM	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3.3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI	268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.31 mm		3.3
W25Q32JVTCIM	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm		3
W25Q80DLSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	2.5			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		80 MHz	3.9 mm				8388608 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			4.85 mm		2.7
W25Q80DLUXIE	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1048576 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.6 mm		80 MHz	2 mm				8388608 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			3 mm		2.7
W25Q80DLZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1048576 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm				8388608 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			6 mm		2.7
W29N01HZBINA	Winbond Electronics	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		1.8
MTFC16GAKAENA-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100	3	3.6 V	1.2 mm			14 mm				137438953472 bit	2.7 V			e1	30	260			18 mm		2.7
W29N08GVSIAA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	350 mA	1073741824 words	3	YES		8	SMALL OUTLINE, THIN PROFILE	tsop48,.787,20	1		10	.5 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	8K	NO		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm				8589934592 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0002 Amp	18.4 mm		3	NO
W29N01HVSINA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm		3.3
IS34ML01G081-BLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B63	3	3.6 V	1 mm			9 mm				1073741824 bit	2.7 V			e1	10	260	SLC NAND TYPE		11 mm		3.3
MT29F4G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
LE25U40CQE-AH	Onsemi	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	2.5		2.5/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm	Not Qualified	15 ms	SPI	4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	6 mm		2.7
LE25U40CQH-AH	Onsemi	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	2.5		2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.16,25		Flash Memories	20	.65 mm	85 Cel		512KX8	512K	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	3 mm	Not Qualified	15 ms	SPI	4194304 bit	2.3 V			e3	30	260	NOR TYPE	.00001 Amp	4 mm		2.7
MT29F4G08ABADAH4-AITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm				4294967296 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		1.8
SST25PF040CT-40V/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI	4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	4.9 mm		3.3
IS34ML02G084-TLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V			e3	10	260	SLC NAND TYPE		18.4 mm		3.3
MTFC16GKQDI-IT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B169		3.6 V	1.2 mm		52 MHz	12 mm				137438953472 bit	2.7 V	IT ALSO REQUIRES 1.65V TO 1.95V, MMC DEVICE			30	260	MLC NAND TYPE		16 mm		3
MT29F128G08CBCCBH6-6R:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		16GX8	16G	0 Cel					BOTTOM			R-PBGA-B152		3.6 V	1 mm			14 mm				137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F128G08CBECBH6-12:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		16GX8	16G	0 Cel					BOTTOM			R-PBGA-B152		3.6 V	1 mm			14 mm				137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F1T08CUCCBH8-6R:C	Micron Technology	FLASH	COMMERCIAL	152	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	70 Cel		128GX8	128G	0 Cel					BOTTOM			R-PBGA-B152		3.6 V	1.4 mm			14 mm				1099511627776 bit	2.7 V						MLC NAND TYPE		18 mm		3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.