RECTANGULAR Flash Memory 1,448

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MX60LF8G18AC-TI	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1GX8	1G	-40 Cel			TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm				8589934592 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm		3
W25Q80EWZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	8388608 words	1.8		1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI		8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	6 mm		1.8
W25Q64JVTCIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	1		20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		3.3
W25Q64JVZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm		3.3
MT29F2G08ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT28EW01GABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		64MX16	64M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm	105 ns	3
MT28EW01GABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm	105 ns	3
MT28EW01GABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		64MX16	64M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm	105 ns	3
MT28EW01GABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				1073741824 bit	2.7 V						NOR TYPE		13 mm	105 ns	3
MT28EW512ABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	105 ns	3
MT28EW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28EW512ABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	105 ns	3
MT28EW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28FW512ABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	105 ns	3
MT28FW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28FW512ABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	105 ns	3
MT28FW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
M29W640GB70N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm			BOTTOM	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm	70 ns	3
M58LT128KSB7ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm			BOTTOM	134217728 bit	1.7 V						NOR TYPE		13 mm	70 ns	1.8
M58LT128KST8ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm			TOP	134217728 bit	1.7 V						NOR TYPE		13 mm	85 ns	1.8
MX35LF2GE4AB-MI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	268435456 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel			MATTE TIN		DUAL		HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified	SPI		2147483648 bit	2.7 V			e3			SLC NAND TYPE	.00005 Amp	10.3 mm		3
W25Q20EWSVIG	Winbond Electronics	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	2097152 words	1.8		1.8	1	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	.9 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	4.9 mm		1.8
MX25R3235FBDIL0	Macronix	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		6 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA12,5X7,14/8	2		20	.35 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B12		3.6 V	.52 mm	100000 Write/Erase Cycles	80 MHz			SPI		33554432 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000024 Amp			1.8
MX25U51245GMI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	2 V	2.65 mm		133 MHz	7.52 mm				536870912 bit	1.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		e3			NOR TYPE		10.3 mm		1.8
SST26VF016BT-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		16777216 bit	2.7 V			e3			NOR TYPE	.000025 Amp	5.26 mm		3
SST26VF032B-104V/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI		33554432 bit	2.7 V			e3			NOR TYPE	.000045 Amp	6 mm		3
W25N01GVTBIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
W25N01GVTBIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
W25N01GVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
W25N01GVTCIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
W25N01GVZEIT	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	10	1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm		3
N25Q032A13EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm		3
N25Q032A13EF440F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12		Flash Memories	20	.8 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	108 MHz	3 mm	Not Qualified	SPI		33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4 mm		3
MTFDDAK120MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		120GX8	120G	0 Cel					SINGLE			R-XSMA-X22		5.5 V	7.2 mm			69.85 mm				1030792151040 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
MTFDDAK240MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					257698037760 words	5			8	FLANGE MOUNT						70 Cel		240GX8	240G	0 Cel		NO			UNSPECIFIED			R-XXFM-X22		5.5 V	7 mm			69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK240MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		240GX8	240G	0 Cel					SINGLE			R-XSMA-X22		5.5 V	7.2 mm			69.85 mm				2061584302080 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
MTFDDAK480MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					515396075520 words	5			8	FLANGE MOUNT						70 Cel		480GX8	480G	0 Cel		NO			UNSPECIFIED			R-XXFM-X22		5.5 V	7 mm			69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK480MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		480GX8	480G	0 Cel					SINGLE			R-XSMA-X22		5.5 V	7.2 mm			69.85 mm				4123168604160 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
MTFDDAK800MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					858993459200 words	5			8	FLANGE MOUNT						70 Cel		800GX8	800G	0 Cel		NO			UNSPECIFIED			R-XXFM-X22		5.5 V	7 mm			69.85 mm				6871947673600 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK960MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					1030792151040 words	5			8	FLANGE MOUNT						70 Cel		960GX8	960G	0 Cel		NO			UNSPECIFIED			R-XXFM-X22		5.5 V	7 mm			69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK960MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					SINGLE			R-XSMA-X22		5.5 V	7.2 mm			69.85 mm				8246337208320 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
M45PE40S-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		75 MHz	3.9 mm				2097152 bit	2.7 V						NOR TYPE		4.9 mm		2.7
NAND512W3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM			R-PBGA-B63		3.6 V	1.05 mm			9 mm	Not Qualified			536870912 bit	2.7 V		512	e2	30	260	SLC NAND TYPE	.00005 Amp	11 mm	35 ns	3	NO
SST26VF064B-104V/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		SPI		67108864 bit	2.7 V			e3	40	260	NOR TYPE	.000045 Amp	10.3 mm		3
SST26VF064BT-104V/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm		SPI		67108864 bit	2.7 V			e3			NOR TYPE	.000045 Amp	6 mm		3
SST26VF064BT-104V/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		SPI		67108864 bit	2.7 V			e3	40	260	NOR TYPE	.000045 Amp	10.3 mm		3
MT28EW01GABA1HPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				1073741824 bit	2.7 V				30	260			13 mm	95 ns	3
MT28EW01GABA1LPC-1SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm				1073741824 bit	2.7 V				30	260			13 mm	95 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.