RECTANGULAR Flash Memory 1,448

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
SST26VF016B-80E/SM	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	2.5		1	SMALL OUTLINE	SOP8,.3		100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	80 MHz	5.25 mm	SPI		16777216 bit	2.3 V					NOR TYPE	.000025 Amp	5.26 mm	2.5
SST25PF040C-40E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3.3		1	SMALL OUTLINE	SOP8,.23		20	1.27 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel			DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	SPI		4194304 bit	2.3 V					NOR TYPE	.00001 Amp	4.9 mm	3.3
MTSD256AHC6MS-1WT	Micron Technology	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		274877906944 words			8	UNCASED CHIP					85 Cel		256GX8	256G	-25 Cel			UPPER			R-XUUC-N									2199023255552 bit						NOR TYPE
MTSD064AHC6MS-1WT	Micron Technology	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		68719476736 words			8	UNCASED CHIP					85 Cel		64GX8	64G	-25 Cel			UPPER			R-XUUC-N									549755813888 bit						NOR TYPE
MTSD032AHC6MS-1WT	Micron Technology	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		34359738368 words			8	UNCASED CHIP					85 Cel		32GX8	32G	-25 Cel			UPPER			R-XUUC-N									274877906944 bit						NOR TYPE
MTSD128AHC6MS-1WT	Micron Technology	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		137438953472 words			8	UNCASED CHIP					85 Cel		128GX8	128G	-25 Cel			UPPER			R-XUUC-N									1099511627776 bit						NOR TYPE
W25Q512JVFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	67108864 words	3.3		8	SMALL OUTLINE	SOP16,.4	4	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm	SPI		536870912 bit	3 V	ALSO OPERATES AT 2.7VMIN @104MHZ				NOR TYPE	.00006 Amp	10.31 mm	3.3
W25Q64JWZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	8388608 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4	20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	SPI		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	6 mm	1.8
MX25U12832FZ4I02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	16777216 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI		134217728 bit	1.65 V					NOR TYPE	.000005 Amp	8 mm	1.8
GD25Q32CTIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3		1	SMALL OUTLINE	SOP8,.23		20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	120 MHz	3.9 mm	SPI	BOTTOM/TOP	33554432 bit	2.7 V					NOR TYPE	.000005 Amp	4.9 mm	2.7
GD25Q32CSIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3		1	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm	SPI	BOTTOM/TOP	33554432 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm	2.7
MX25U51245GBFI0A	Macronix	FLASH		68	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X10,20		20	.4 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B68		2 V	.44 mm	100000 Write/Erase Cycles	166 MHz		SPI		536870912 bit	1.65 V					NOR TYPE	.00005 Amp		1.8
MTFC128GAPALBH-AAT	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		137438953472 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel		128GX8	128G	-40 Cel			BOTTOM			R-PBGA-B153		3.6 V	1.1 mm			11.5 mm			1099511627776 bit	2.7 V					NAND TYPE		13 mm
MTFC16GAPALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		5	.5 mm	85 Cel		16GX8	16G	-40 Cel			BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V					NAND TYPE		13 mm
MTFC8GAKAJCN-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words		NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel		8GX8	8G	-40 Cel	NO	TIN SILVER COPPER	BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V		e1	30	260	MLC NAND TYPE		13 mm		NO
MTFC16GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	85 Cel		16GX8	16G	-40 Cel			BOTTOM			R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm			137438953472 bit	2.7 V					NOR TYPE		18 mm
THGBMJG8C2LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				34359738368 words			8	GRID ARRAY	BGA153,14X14,20			.5 mm	85 Cel		32GX8	32G	-25 Cel			BOTTOM			R-PBGA-B153		3.6 V				11 mm			274877906944 bit	2.7 V							13 mm
THGBMJG8C4LBAU8	Kioxia Holdings	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL				34359738368 words			8	GRID ARRAY	BGA153,14X14,20			.5 mm	105 Cel		32GX8	32G	-40 Cel			BOTTOM			R-PBGA-B153		3.6 V				11 mm			274877906944 bit	2.7 V							13 mm
SQF-SHMU2-128G-SBE	Advantech	FLASH MODULE			DMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		137438953472 words	3.3		8	MICROELECTRONIC ASSEMBLY			10	.8 mm	85 Cel		128GX8	128G	-40 Cel			DUAL			R-XDMA-N52				30000 Write/Erase Cycles					1099511627776 bit						MLC NAND TYPE			3.3
FEMC016GTTG7-T13-27	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				17179869184 words	3.3		8						85 Cel		16GX8	16G	-40 Cel			BOTTOM			R-PBGA-B100									137438953472 bit						SLC NAND TYPE
FEMC032GTTE7-T13-26	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				34359738368 words	3.3		8						85 Cel		32GX8	32G	-25 Cel			BOTTOM			R-PBGA-B100									274877906944 bit						MLC NAND TYPE
FEMC064GTTE7-T14-46	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				68719476736 words	3.3		8						85 Cel		64GX8	64G	-25 Cel			BOTTOM			R-PBGA-B153									549755813888 bit						MLC NAND TYPE
FEMC004GTTG7-T13-17	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				4294967296 words	3.3		8						85 Cel		4GX8	4G	-40 Cel			BOTTOM			R-PBGA-B100									34359738368 bit						SLC NAND TYPE
FEMC008GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				8589934592 words	3.3		8						85 Cel		8GX8	8G	-25 Cel			BOTTOM			R-PBGA-B100									68719476736 bit						SLC NAND TYPE
FEMC016GTTG7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				17179869184 words	3.3		8						85 Cel		16GX8	16G	-40 Cel			BOTTOM			R-PBGA-B100									137438953472 bit						MLC NAND TYPE
FEMC004GTTG7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				4294967296 words	3.3		8						85 Cel		4GX8	4G	-40 Cel			BOTTOM			R-PBGA-B100									34359738368 bit						MLC NAND TYPE
FEMC008GTTG7-T13-17	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				8589934592 words	3.3		8						85 Cel		8GX8	8G	-40 Cel			BOTTOM			R-PBGA-B100									68719476736 bit						SLC NAND TYPE
FEMC016GTTE7-T13-27	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				17179869184 words	3.3		8						85 Cel		16GX8	16G	-25 Cel			BOTTOM			R-PBGA-B100									137438953472 bit						SLC NAND TYPE
FEMC016GTTE7-T14-16	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				17179869184 words	3.3		8						85 Cel		16GX8	16G	-25 Cel			BOTTOM			R-PBGA-B153									137438953472 bit						MLC NAND TYPE
FEMC002GTTE7-T14-17	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				2147483648 words	3.3		8						85 Cel		2GX8	2G	-25 Cel			BOTTOM			R-PBGA-B153									17179869184 bit						SLC NAND TYPE
FEMC002GTTG7-T24-17	Flexxon Global	FLASH CARD	INDUSTRIAL	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				2147483648 words	3.3		8						85 Cel		2GX8	2G	-40 Cel			BOTTOM			R-PBGA-B153									17179869184 bit						SLC NAND TYPE
FEMC008GTTA7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				8589934592 words	3.3		8						85 Cel		8GX8	8G	-40 Cel			BOTTOM			R-PBGA-B100									68719476736 bit						MLC NAND TYPE
FEMC008GTTG7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				8589934592 words	3.3		8						85 Cel		8GX8	8G	-40 Cel			BOTTOM			R-PBGA-B100									68719476736 bit						MLC NAND TYPE
FEMC004GTTE7-T13-17	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				4294967296 words	3.3		8						85 Cel		4GX8	4G	-25 Cel			BOTTOM			R-PBGA-B100									34359738368 bit						SLC NAND TYPE
FEMC004GTTE7-T14-16	Flexxon Global	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				4294967296 words	3.3		8						85 Cel		4GX8	4G	-25 Cel			BOTTOM			R-PBGA-B153									34359738368 bit						MLC NAND TYPE
FEMC004GTTG7-T24-16	Flexxon Global	FLASH CARD	INDUSTRIAL	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				4294967296 words	3.3		8						85 Cel		4GX8	4G	-40 Cel			BOTTOM			R-PBGA-B153									34359738368 bit						MLC NAND TYPE
FEMC008GTTE7-T13-16	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				8589934592 words	3.3		8						85 Cel		8GX8	8G	-25 Cel			BOTTOM			R-PBGA-B100									68719476736 bit						MLC NAND TYPE
FEMC016GTTA7-T13-16	Flexxon Global	FLASH CARD	INDUSTRIAL	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				17179869184 words	3.3		8						85 Cel		16GX8	16G	-40 Cel			BOTTOM			R-PBGA-B100									137438953472 bit						MLC NAND TYPE
FEMC016GTTE7-T13-16	Flexxon Global	FLASH CARD	OTHER	100		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL				17179869184 words	3.3		8						85 Cel		16GX8	16G	-25 Cel			BOTTOM			R-PBGA-B100									137438953472 bit						MLC NAND TYPE
GD25Q16CEIGR	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		20	.5 mm	85 Cel		2MX8	2M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.5 mm	100000 Write/Erase Cycles	120 MHz	2 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000005 Amp	3 mm	3.3
GD25Q16CSIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3		8	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm	3.3
GD25Q16CTIG	Gigadevice Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	3.3		8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	120 MHz	3.9 mm	SPI		16777216 bit	2.7 V					NOR TYPE	.000005 Amp	4.9 mm	3.3
MTFDDAV480TDS-1AW1ZABYY	Micron Technology	FLASH MODULE		75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		515396075520 words	3.3		8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel			SINGLE			R-XSMA-N75		3.46 V	3.28 mm			22 mm			4123168604160 bit	3.14 V					TLC NAND TYPE		80 mm	3.3
2988780	Phoenix Contact	CONFIGURATION MEMORY	INDUSTRIAL			RECTANGULAR		NO	1	CMOS						268435456 words	3.3		8						85 Cel		256MX8	256M	-40 Cel								3.465 V	42.8 mm			3.3 mm			2147483648 bit	3.135 V							36.4 mm	3.3
SFU32048E1AE1TO-I-QT-1A1-STD	Swissbit Ag	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS	208 mA	2147483648 words	5		8				10		85 Cel		2GX8	2G	-40 Cel			UNSPECIFIED			R-XXMA-X		5.5 V	8.3 mm			18 mm			17179869184 bit	4.5 V					SLC NAND TYPE		67.8 mm	5
MTFC16GAPALBH-ITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel		TIN SILVER COPPER	BOTTOM			R-PBGA-B153		3.6 V	1.2 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V			30	260	NAND TYPE		13 mm	2.7
MTFC16GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel		TIN SILVER COPPER	BOTTOM			R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V		e1	30	260	NAND TYPE		13 mm	2.7
IS25WP512M-RHLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel		TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	1.95 V	1.2 mm	100000 Write/Erase Cycles	112 MHz	6 mm	SPI		536870912 bit	1.7 V			30	260	NOR TYPE	.00026 Amp	8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.