RECTANGULAR Flash Memory 1,448

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SQF-SMSM4-256G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				274877906944 words			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					SINGLE		R-XSMA-N52			4.2 mm			30 mm			2199023255552 bit							MLC NAND TYPE		50.8 mm
SQF-SMSM2-64G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				68719476736 words			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					SINGLE		R-XSMA-N52			4.2 mm			30 mm			549755813888 bit							MLC NAND TYPE		50.8 mm
SQF-SMSM4-256G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				274877906944 words			8	MICROELECTRONIC ASSEMBLY					85 Cel		256GX8	256G	-40 Cel					SINGLE		R-XSMA-N52			4.2 mm			30 mm			2199023255552 bit							MLC NAND TYPE		50.8 mm
SQF-SMSM4-512G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				549755813888 words			8	MICROELECTRONIC ASSEMBLY					85 Cel		512GX8	512G	-40 Cel					SINGLE		R-XSMA-N52			4.2 mm			30 mm			4398046511104 bit							MLC NAND TYPE		50.8 mm
W25X05CLUXIGTR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		12 mA	65536 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		20	.5 mm	85 Cel		64KX8	64K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	104 MHz	2 mm	SPI		524288 bit	2.3 V						NOR TYPE	.00005 Amp	3 mm			3
MTFC128GASAQJP-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			137438953472 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		128GX8	128G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm			1099511627776 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC128GASAQJP-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			137438953472 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	105 Cel		128GX8	128G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm		200 MHz	11.5 mm			1099511627776 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC64GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	105 Cel		64GX8	64G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm			549755813888 bit	2.7 V			e1	30	260	NAND TYPE		13 mm				NO
MTFC32GASAQHD-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			34359738368 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC64GASAQHD-AIT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		64GX8	64G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm			549755813888 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC32GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			34359738368 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	105 Cel		32GX8	32G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V						NAND TYPE		13 mm				NO
MTFC64GAZAQHD-WT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		64GX8	64G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.9 mm			11.5 mm			549755813888 bit	2.7 V						NAND TYPE		13 mm
SFEM032GB1EA1TO-I-HG-12P-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM		R-PBGA-B153		3.6 V	1 mm	20000 Write/Erase Cycles	200 MHz	11.5 mm			274877906944 bit	2.7 V						SLC NAND TYPE		13 mm			3.3	NO
MT29F1G08ABBEAH4-ITX:E	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm			1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm			1.8	YES
S29GL256S10GHB010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL128S10GHB010	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10GHB013	Infineon Technologies	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
W25N02KVZEIU	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	60000 Write/Erase Cycles	104 MHz	6 mm	SPI		2147483648 bit	2.7 V						SLC NAND TYPE	.00005 Amp	8 mm			3
W25N02KVZEIR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	60000 Write/Erase Cycles	104 MHz	6 mm	SPI		2147483648 bit	2.7 V						SLC NAND TYPE	.00005 Amp	8 mm			3
SFSD0512N1BM1TO-I-ME-221-STD	Swissbit Ag	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		80 mA	536870912 words	3.3		8	UNCASED CHIP			1		85 Cel		512MX8	512M	-40 Cel					UPPER		R-XUUC-N8		3.6 V	1 mm	100000 Write/Erase Cycles	208 MHz	11 mm			4294967296 bit	2.7 V						SLC NAND TYPE	.015 Amp	15 mm			3.3
IS25WX256-JHLA3	Integrated Silicon Solution	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		70 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		100	1 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm	SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			9
MT25QL128ABB1EW7-CSIT	Micron Technology	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.00003 Amp	6 mm			3
MT29F8G08ADADAH4-IT:DTR	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		10	.8 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm	100000 Write/Erase Cycles		9 mm			8589934592 bit	2.7 V		2K				SLC NAND TYPE	.0001 Amp	11 mm			3.3	NO
2701185	Phoenix Contact	CONFIGURATION MEMORY			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					2147483648 words	3.3		8	UNCASED CHIP					85 Cel		2GX8	2G	-40 Cel					UPPER		R-XUUC-N		3.465 V	3.3 mm			36.4 mm			17179869184 bit	3.135 V						NOR TYPE		42.8 mm			3.3
MT29F8G08AAAWP:ATR	Micron Technology	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		10	.5 mm	70 Cel	3-STATE	1GX8	1G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm			8589934592 bit	2.7 V		2K		30	260	SLC NAND TYPE		18.4 mm			3.3	NO
S29AL016J70TFM020	Infineon Technologies	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	20	.5 mm	125 Cel	3-STATE	1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm		BOTTOM	16777216 bit	2.7 V						NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT29F256G08CJABAWP:B	Micron Technology	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3	NO	8	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20			.5 mm	70 Cel		32GX8	32G	0 Cel		NO		YES	QUAD	HARDWARE	R-PDSO-G48		3.6 V	1.2 mm	3000 Write/Erase Cycles		12 mm			274877906944 bit	2.7 V		8K				MLC NAND TYPE	.00005 Amp	18.4 mm			3.3	NO
S29GL064N11FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS43	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS23	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS22	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS42	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS13	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS42	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS12	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS20	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.