| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
55 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
16K |
20 mA |
33554432 words |
3 |
NO |
3/3.3 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA55,8X12,32 |
Flash Memories |
.8 mm |
85 Cel |
32MX8 |
32M |
-40 Cel |
2K |
YES |
YES |
BOTTOM |
R-PBGA-B55 |
3.6 V |
1.05 mm |
8 mm |
Not Qualified |
268435456 bit |
2.7 V |
512 |
SLC NAND TYPE |
.00005 Amp |
10 mm |
45 ns |
3 |
NO |
||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
64094208 words |
1.8 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
64MX8 |
64M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
1.95 V |
1.2 mm |
12 mm |
512753664 bit |
1.7 V |
e3 |
30 |
260 |
SLC NAND TYPE |
18.4 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
64094208 words |
1.8 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
64MX8 |
64M |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
1.95 V |
1.2 mm |
12 mm |
512753664 bit |
1.7 V |
e3 |
30 |
260 |
SLC NAND TYPE |
18.4 mm |
1.8 |
||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
63 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
268435456 words |
3.3 |
16 |
GRID ARRAY |
85 Cel |
256MX16 |
256M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B63 |
4294967296 bit |
e1 |
30 |
260 |
SLC NAND TYPE |
3.3 |
||||||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4194304 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
4MX16 |
4M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
67108864 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
70 ns |
3 |
|||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
67108864 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
85 Cel |
64MX8 |
64M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
133 MHz |
7.52 mm |
536870912 bit |
2.7 V |
10.3 mm |
3 |
|||||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
24 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
130 mA |
268435456 words |
3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA24,5X5,40 |
4 |
20 |
1 mm |
85 Cel |
3-STATE |
256MX8 |
256M |
-40 Cel |
BOTTOM |
HARDWARE/SOFTWARE |
R-PBGA-B24 |
3.6 V |
1.3 mm |
100000 Write/Erase Cycles |
133 MHz |
6 mm |
SPI |
2147483648 bit |
2.7 V |
IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.0006 Amp |
8 mm |
3 |
|||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
1.8 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
85 Cel |
32MX8 |
32M |
-40 Cel |
DUAL |
R-PDSO-G16 |
2 V |
2.65 mm |
133 MHz |
7.52 mm |
268435456 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.3 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
67108864 words |
1.8 |
8 |
GRID ARRAY, THIN PROFILE |
1 |
1 mm |
85 Cel |
64MX8 |
64M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
2 V |
1.2 mm |
250 MHz |
6 mm |
536870912 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Macronix |
FLASH |
INDUSTRIAL |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
67108864 words |
1.8 |
8 |
GRID ARRAY, THIN PROFILE |
1 |
1 mm |
85 Cel |
64MX8 |
64M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
2 V |
1.2 mm |
200 MHz |
6 mm |
536870912 bit |
1.65 V |
8 mm |
1.8 |
|||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
33554432 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1 |
1.27 mm |
105 Cel |
32MX8 |
32M |
-40 Cel |
DUAL |
R-PDSO-N8 |
1.95 V |
.8 mm |
166 MHz |
6 mm |
268435456 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
SERIAL |
SYNCHRONOUS |
67108864 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
64MX8 |
64M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
133 MHz |
7.5 mm |
536870912 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.3 mm |
3 |
||||||||||||||||||||||||||||||||
|
|
Gigadevice Semiconductor |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
8388608 words |
3.3 |
1 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
8MX1 |
8M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
120 MHz |
3.9 mm |
8388608 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
4.9 mm |
3.3 |
||||||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
2097152 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
133 MHz |
3.9 mm |
16777216 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
4.85 mm |
3 |
|||||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
2097152 words |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
S-PDSO-G8 |
3.6 V |
2.16 mm |
133 MHz |
5.23 mm |
16777216 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
5.23 mm |
3 |
||||||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
8388608 words |
3.3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1 |
20 |
1.27 mm |
105 Cel |
3-STATE |
8MX8 |
8M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
133 MHz |
5.28 mm |
SPI |
67108864 bit |
3 V |
IT ALSO OPERATES AT 2.7V @ 104MHZ |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
5.28 mm |
3.3 |
|||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
8388608 words |
3.3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1 |
20 |
1.27 mm |
105 Cel |
3-STATE |
8MX8 |
8M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
133 MHz |
5.28 mm |
SPI |
67108864 bit |
3 V |
IT ALSO OPERATES AT 2.7V @ 104MHZ |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
5.28 mm |
3.3 |
|||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
134217728 words |
3 |
1 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
105 Cel |
128MX1 |
128M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G56 |
3.6 V |
1.2 mm |
14 mm |
134217728 bit |
2.7 V |
e3 |
18.4 mm |
70 ns |
3 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
4194304 bit |
2.3 V |
CLOCK FREQUENCY FOR READ MODE 33 MHZ |
e3 |
30 |
260 |
NOR TYPE |
4.9 mm |
3 |
|||||||||||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
536870912 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
105 Cel |
512MX8 |
512M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
4294967296 bit |
2.7 V |
SLC NAND TYPE |
18.4 mm |
3.3 |
|||||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
128KX8 |
128K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
1 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
1048576 bit |
2.3 V |
e3 |
30 |
260 |
4.9 mm |
3 |
||||||||||||||||||||||||||||||
|
|
Winbond Electronics |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
25 mA |
16777216 words |
3.3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
4 |
20 |
1.27 mm |
125 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-G8 |
3.6 V |
2.16 mm |
100000 Write/Erase Cycles |
133 MHz |
5.28 mm |
SPI |
134217728 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00006 Amp |
5.28 mm |
3.3 |
||||||||||||||||||||||||
|
|
Micron Technology |
FLASH |
INDUSTRIAL |
64 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
16K,64K |
28 mA |
8388608 words |
3 |
NO |
2.5/3.3 |
16 |
GRID ARRAY, THIN PROFILE |
BGA64,8X8,40 |
Flash Memories |
1 mm |
85 Cel |
8MX16 |
8M |
-40 Cel |
4,127 |
YES |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B64 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
BOTTOM |
134217728 bit |
2.3 V |
8 |
e1 |
30 |
260 |
NOR TYPE |
.002 Amp |
10 mm |
YES |
60 ns |
3 |
NO |
|||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4294967296 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
4GX8 |
4G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
34359738368 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
8GX8 |
8G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
68719476736 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
4194304 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
4MX8 |
4M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
133 MHz |
7.49 mm |
33554432 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
3 |
|||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
14 mA |
16777216 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.2 |
1 |
20 |
1.27 mm |
105 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.8 mm |
100000 Write/Erase Cycles |
133 MHz |
5 mm |
4-WIRE |
134217728 bit |
2.7 V |
.000065 Amp |
6 mm |
||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
32MX8 |
32M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
133 MHz |
7.49 mm |
268435456 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
3 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
67108864 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
64MX8 |
64M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
133 MHz |
7.49 mm |
536870912 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
3 |
|||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
262144 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
256KX1 |
256K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
262144 bit |
2.3 V |
e3 |
30 |
260 |
4.9 mm |
3 |
||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
33554432 words |
3 |
1 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
32MX1 |
32M |
-40 Cel |
DUAL |
S-PDSO-G8 |
3.6 V |
2.16 mm |
104 MHz |
5.28 mm |
33554432 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
5.28 mm |
2.7 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
524288 words |
3 |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
.5 mm |
105 Cel |
512KX1 |
512K |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.6 mm |
104 MHz |
2 mm |
524288 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
3 mm |
3 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
2097152 words |
1.8 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
S-PDSO-G8 |
1.95 V |
2.16 mm |
133 MHz |
5.28 mm |
16777216 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
5.28 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1 |
1.27 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
R-PDSO-N8 |
1.95 V |
.85 mm |
133 MHz |
6 mm |
67108864 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
R-PDSO-G16 |
1.95 V |
2.65 mm |
133 MHz |
7.49 mm |
67108864 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
1.8 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
24 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
GRID ARRAY, THIN PROFILE |
1 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
BOTTOM |
R-PBGA-B24 |
1.95 V |
1.2 mm |
133 MHz |
6 mm |
67108864 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
1.8 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
8388608 words |
1.8 |
8 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
R-PDSO-G16 |
1.95 V |
2.65 mm |
133 MHz |
7.49 mm |
67108864 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
1.8 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
1048576 words |
1.8 |
8 |
SMALL OUTLINE |
1.27 mm |
105 Cel |
1MX8 |
1M |
-40 Cel |
DUAL |
S-PDSO-G8 |
1.95 V |
2.16 mm |
133 MHz |
5.28 mm |
8388608 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
5.28 mm |
1.8 |
||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
33554432 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1 |
1.27 mm |
105 Cel |
32MX8 |
32M |
-40 Cel |
DUAL |
R-PDSO-N8 |
1.95 V |
.8 mm |
166 MHz |
6 mm |
268435456 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
67108864 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1 |
1.27 mm |
105 Cel |
64MX8 |
64M |
-40 Cel |
DUAL |
R-PDSO-N8 |
1.95 V |
.8 mm |
133 MHz |
6 mm |
536870912 bit |
1.65 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
1.8 |
|||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
134217728 words |
3.3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.27 mm |
85 Cel |
128MX8 |
128M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
.85 mm |
104 MHz |
6 mm |
1073741824 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
8 mm |
3.3 |
|||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
134217728 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128MX8 |
128M |
-40 Cel |
DUAL |
R-PDSO-G16 |
3.6 V |
2.65 mm |
104 MHz |
7.49 mm |
1073741824 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
SLC NAND TYPE |
10.31 mm |
3.3 |
|||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
16GX8 |
16G |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
137438953472 bit |
2.7 V |
e1 |
30 |
260 |
13 mm |
2.7 |
||||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
32GX8 |
32G |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
274877906944 bit |
2.7 V |
e1 |
30 |
260 |
13 mm |
2.7 |
||||||||||||||||||||||||||||||||||
|
|
Delkin Devices |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4294967296 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
4GX8 |
4G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
34359738368 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||||
|
|
Delkin Devices |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4294967296 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
4GX8 |
4G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
34359738368 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SOP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
8388608 words |
3 |
8 |
SMALL OUTLINE |
1 |
1.27 mm |
105 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
S-PDSO-G8 |
3.6 V |
2.16 mm |
166 MHz |
5.28 mm |
67108864 bit |
2.7 V |
30 |
250 |
5.28 mm |
3 |
|||||||||||||||||||||||||||||||||
|
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.5 mm |
85 Cel |
8GX8 |
8G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1.2 mm |
11.5 mm |
68719476736 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
2.7 |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.