INDUSTRIAL Flash Memory 964

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFC4GLGDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC4GMWDM-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC4GMWDQ-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18 mm			2.7
MTFC4GLMDQ-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm			2.7
MTFC8GLWDQ-3LAITZ	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		8GX8	8G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V			e1	30	260			18 mm			2.7
MT29F32G08CBACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
RPSEMC16DA1	Panasonic	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B153	3	3.6 V	1.4 mm			11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			2.7
SFSD4096N1BW1MT-I-DF-111-STD	Swissbit Ag	FLASH CARD	INDUSTRIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4294967296 words	3.3			8	UNCASED CHIP						85 Cel		4GX8	4G	-40 Cel					UPPER			R-XUUC-N8		3.6 V	1 mm		50 MHz	11 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			15 mm			3.3
MT35XL01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V			e1	30	260			8 mm			3
MT35XL01GBBA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V			e1	30	260			8 mm			3
MT35XL256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V			e1	30	260			8 mm			3
MT35XL256ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V			e1	30	260			8 mm			3
MT35XL512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XL512ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XU256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.7 V			e1	30	260			8 mm			1.8
MT29F2G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G01AAADDH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm				1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MTFC4GLGDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
SST26VF016BEUIT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE, LOW PROFILE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-C48		3.6 V	1.68 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V						NOR TYPE	.000025 Amp	4.89 mm			3
MT29F16G08ABABAWP-IT:BTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				17179869184 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			2.7
PF48F4400P0VBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM			R-PBGA-B88		2 V	1.2 mm			8 mm	Not Qualified		BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	11 mm	YES	88 ns	1.8	NO
PC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM			R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	13 mm	YES	88 ns	1.8	NO
MX25U12872FM2I02	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE	R-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm		SPI		134217728 bit	1.65 V	IT ALSO CAN BE CONFIGURED AS 64M X 2					NOR TYPE	.000005 Amp	5.28 mm			1.8
MT29F8G08ABACAWP-AIT:CTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20				.5 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	60000 Write/Erase Cycles		12 mm				8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	18.4 mm				NO
RC28F128J3F75F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		75 ns	3
MT29F32G08ABAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4GX8	4G	-40 Cel	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			34359738368 bit	2.7 V		8K				SLC NAND TYPE	.00001 Amp	18.4 mm		20 ns	3.3	NO
MT29F32G08AFACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4GX8	4G	-40 Cel	8K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			34359738368 bit	2.7 V		4K				SLC NAND TYPE		18.4 mm		20 ns	3.3	NO
MT29F1G01ABAFDSF-AAT:F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			1073741824 words	3.3			1	SMALL OUTLINE						105 Cel		1GX1	1G	-40 Cel					DUAL			R-PDSO-G16										1073741824 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE					3.3
MTFC4GLGDQ-AITZTR	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			14 mm				34359738368 bit	2.7 V			e1					18 mm			2.7
MTFC64GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm				549755813888 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
W25Q01JVSFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.64 mm		133 MHz	7.49 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
W25Q01JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
W25Q128JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			1.8
W25Q128JWEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			1.8
W25Q128JWPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm			1.8
W25Q128JWSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm			1.8
MTFC4GLMDQ-AITZTR	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm				34359738368 bit	2.7 V						MLC NAND TYPE		18 mm			2.7
MTFC64GASAONS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm				549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC64GASAONS-AITESTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1.461 mm		52 MHz	11.5 mm				549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
SST26WF016BAT-104I/CS	Microchip Technology	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	GRID ARRAY	BGA8,3X5,23			100	.886 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B8		1.95 V	.64 mm	100000 Write/Erase Cycles	104 MHz			SPI		16777216 bit	1.65 V						NOR TYPE	.000005 Amp				1.8
SST26VF016B-104I/SM70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm		SPI		16777216 bit	2.7 V						NOR TYPE	.000045 Amp	5.26 mm			3
SST26VF016B-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V						NOR TYPE	.000045 Amp	4.9 mm			3
SST26VF016B-104V/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V						NOR TYPE	.000045 Amp	4.9 mm			3
SST26VF016BT-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	2.7 V						NOR TYPE	.000045 Amp	4.9 mm			3
SST25PF040C-40V/MF18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	40 MHz	5 mm		SPI		4194304 bit	2.3 V						NOR TYPE	.00001 Amp	6 mm			3.3
SST25PF040C-40V/SN18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3			8	SMALL OUTLINE	SOP8,.23			20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm		SPI		4194304 bit	2.3 V						NOR TYPE	.00001 Amp	4.9 mm			3.3
SST25PF040CT-40V/NP18GVAO	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			20	.5 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	40 MHz	2 mm		SPI		4194304 bit	2.3 V						NOR TYPE	.00001 Amp	3 mm			3.3
SST39VF3201C-70-4I-B3KE-T-VAO	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32			100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63			YES	BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.