INDUSTRIAL Flash Memory 964

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MT25QL256ABA1EW9-0AAT

Micron Technology

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

NO LEAD

SERIAL

SYNCHRONOUS

268435456 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

1.27 mm

105 Cel

256MX1

256M

-40 Cel

DUAL

R-PDSO-N8

3.6 V

.8 mm

133 MHz

6 mm

268435456 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

3

W25Q128JWSIM

Winbond Electronics

FLASH

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

16777216 words

1.8

8

SMALL OUTLINE

SOP8,.3

20

1.27 mm

85 Cel

3-STATE

16MX8

16M

-40 Cel

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

1.95 V

2.16 mm

100000 Write/Erase Cycles

133 MHz

5.28 mm

SPI

134217728 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00005 Amp

5.28 mm

1.8

SST26VF020A-104I/SN

Microchip Technology

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

25 mA

2097152 words

3

1

SMALL OUTLINE

SOP8,.23

100

1.27 mm

85 Cel

3-STATE

2MX1

2M

-40 Cel

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

104 MHz

3.9 mm

SPI

2097152 bit

2.7 V

30

260

NOR TYPE

.00002 Amp

4.9 mm

3

N25Q064A13E1240E

Micron Technology

FLASH

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

15 mA

8388608 words

COMMON

3

8

GRID ARRAY, THIN PROFILE

BGA24, 5X5, 40

20

1 mm

85 Cel

TOTEM POLE

8MX8

8M

-40 Cel

NO

BOTTOM

HARDWARE/SOFTWARE

R-PBGA-B24

3.6 V

1.2 mm

108 MHz

6 mm

SPI

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

.0001 Amp

8 mm

3

MTFC4GACAJCN-4MITTR

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4294967296 words

NO

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

4GX8

4G

-40 Cel

NO

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B153

3.6 V

1 mm

52 MHz

11.5 mm

34359738368 bit

2.7 V

e1

30

260

MLC NAND TYPE

13 mm

NO

W25Q512JVFIQ

Winbond Electronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

40 mA

67108864 words

3.3

8

SMALL OUTLINE

SOP16,.4

4

20

1.27 mm

85 Cel

3-STATE

64MX8

64M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.64 mm

100000 Write/Erase Cycles

133 MHz

7.49 mm

SPI

536870912 bit

3 V

ALSO OPERATES AT 2.7VMIN @104MHZ

NOR TYPE

.00006 Amp

10.31 mm

3.3

W25Q64JWZPIM

Winbond Electronics

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

20 mA

8388608 words

1.8

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

4

20

1.27 mm

85 Cel

3-STATE

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

1.95 V

.8 mm

100000 Write/Erase Cycles

133 MHz

5 mm

SPI

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000025 Amp

6 mm

1.8

GD25Q32CTIG

Gigadevice Semiconductor

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

33554432 words

3.3

1

SMALL OUTLINE

SOP8,.23

20

1.27 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

120 MHz

3.9 mm

SPI

BOTTOM/TOP

33554432 bit

2.7 V

NOR TYPE

.000005 Amp

4.9 mm

2.7

GD25Q32CSIG

Gigadevice Semiconductor

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

25 mA

33554432 words

3.3

1

SMALL OUTLINE

SOP8,.3

20

1.27 mm

85 Cel

32MX1

32M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

2.16 mm

100000 Write/Erase Cycles

120 MHz

5.23 mm

SPI

BOTTOM/TOP

33554432 bit

2.7 V

NOR TYPE

.000005 Amp

5.28 mm

2.7

SST25VF080B-50-4I-ZCE

Microchip Technology

FLASH

INDUSTRIAL

16

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

30 mA

8388608 words

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA16,4X2,20

100

.5 mm

85 Cel

3-STATE

8MX1

8M

-40 Cel

BOTTOM

1

HARDWARE/SOFTWARE

S-PBGA-B16

3.6 V

.4 mm

100000 Write/Erase Cycles

50 MHz

2 mm

SPI

8388608 bit

2.7 V

NOR TYPE

.00003 Amp

2 mm

MTFC16GAPALGT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

NAND TYPE

13 mm

MTFC8GAKAJCN-4MITTR

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

NO

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

8GX8

8G

-40 Cel

NO

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1 mm

52 MHz

11.5 mm

68719476736 bit

2.7 V

e1

30

260

MLC NAND TYPE

13 mm

NO

MTFC16GAPALHT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

100

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, VERY THIN PROFILE

BGA100,10X17,40

5

1 mm

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B100

3.6 V

1 mm

200 MHz

14 mm

137438953472 bit

2.7 V

NOR TYPE

18 mm

THGBMJG8C4LBAU8

Kioxia Holdings

FLASH CARD

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

34359738368 words

8

GRID ARRAY

BGA153,14X14,20

.5 mm

105 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

11 mm

274877906944 bit

2.7 V

13 mm

MT29F8G08ADBDAH4-AAT:D

Micron Technology

FLASH

INDUSTRIAL

1073741824 words

8

105 Cel

1GX8

1G

-40 Cel

8589934592 bit

SLC NAND TYPE

MT29F2G08ABAGAWP-IT:GTR

Micron Technology

FLASH

INDUSTRIAL

PLASTIC/EPOXY

1

CMOS

ASYNCHRONOUS

268435456 words

8

85 Cel

256MX8

256M

-40 Cel

2147483648 bit

SLC NAND TYPE

FEMC016GTTG7-T13-27

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

17179869184 words

3.3

8

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B100

137438953472 bit

SLC NAND TYPE

FEMC004GTTG7-T13-17

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

4294967296 words

3.3

8

85 Cel

4GX8

4G

-40 Cel

BOTTOM

R-PBGA-B100

34359738368 bit

SLC NAND TYPE

FEMC016GTTG7-T13-16

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

17179869184 words

3.3

8

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B100

137438953472 bit

MLC NAND TYPE

FEMC004GTTG7-T13-16

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

4294967296 words

3.3

8

85 Cel

4GX8

4G

-40 Cel

BOTTOM

R-PBGA-B100

34359738368 bit

MLC NAND TYPE

FEMC008GTTG7-T13-17

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

8589934592 words

3.3

8

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B100

68719476736 bit

SLC NAND TYPE

FEMC002GTTG7-T24-17

Flexxon Global

FLASH CARD

INDUSTRIAL

153

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

2147483648 words

3.3

8

85 Cel

2GX8

2G

-40 Cel

BOTTOM

R-PBGA-B153

17179869184 bit

SLC NAND TYPE

FEMC008GTTA7-T13-16

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

8589934592 words

3.3

8

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B100

68719476736 bit

MLC NAND TYPE

FEMC008GTTG7-T13-16

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

8589934592 words

3.3

8

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B100

68719476736 bit

MLC NAND TYPE

FEMC004GTTG7-T24-16

Flexxon Global

FLASH CARD

INDUSTRIAL

153

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

4294967296 words

3.3

8

85 Cel

4GX8

4G

-40 Cel

BOTTOM

R-PBGA-B153

34359738368 bit

MLC NAND TYPE

FEMC016GTTA7-T13-16

Flexxon Global

FLASH CARD

INDUSTRIAL

100

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100; TS 16949

BALL

17179869184 words

3.3

8

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B100

137438953472 bit

MLC NAND TYPE

GD25Q16CEIGR

Gigadevice Semiconductor

FLASH

INDUSTRIAL

8

HVSON

RECTANGULAR

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

20 mA

2097152 words

3.3

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

20

.5 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

.5 mm

100000 Write/Erase Cycles

120 MHz

2 mm

SPI

16777216 bit

2.7 V

NOR TYPE

.000005 Amp

3 mm

3.3

GD25Q16CSIG

Gigadevice Semiconductor

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

2097152 words

3.3

8

SMALL OUTLINE

SOP8,.3

20

1.27 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

2.16 mm

100000 Write/Erase Cycles

120 MHz

5.23 mm

SPI

16777216 bit

2.7 V

NOR TYPE

.000005 Amp

5.28 mm

3.3

GD25Q16CTIG

Gigadevice Semiconductor

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

2097152 words

3.3

8

SMALL OUTLINE

SOP8,.25

20

1.27 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

120 MHz

3.9 mm

SPI

16777216 bit

2.7 V

NOR TYPE

.000005 Amp

4.9 mm

3.3

2988780

Phoenix Contact

CONFIGURATION MEMORY

INDUSTRIAL

RECTANGULAR

NO

1

CMOS

268435456 words

3.3

8

85 Cel

256MX8

256M

-40 Cel

3.465 V

42.8 mm

3.3 mm

2147483648 bit

3.135 V

36.4 mm

3.3

SFU32048E1AE1TO-I-QT-1A1-STD

Swissbit Ag

FLASH MODULE

INDUSTRIAL

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

ASYNCHRONOUS

208 mA

2147483648 words

5

8

10

85 Cel

2GX8

2G

-40 Cel

UNSPECIFIED

R-XXMA-X

5.5 V

8.3 mm

18 mm

17179869184 bit

4.5 V

SLC NAND TYPE

67.8 mm

5

MTFC16GAPALBH-ITTR

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

16GX8

16G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

30

260

NAND TYPE

13 mm

2.7

MTFC16GAPALBH-IT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

3-STATE

16GX8

16G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

137438953472 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

2.7

MX25V20066M1I02

Macronix

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

8

SMALL OUTLINE

SOP8,.25

20

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

DUAL

HARDWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

80 MHz

3.9 mm

SPI

2097152 bit

2.7 V

ALSO AVAILABLE WITH 2.3VMIN@50MHZ

NOR TYPE

.00002 Amp

4.9 mm

3

MTFC64GAPALGT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

68719476736 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

549755813888 bit

2.7 V

NAND TYPE

13 mm

MTFC64GAPALHT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

100

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

68719476736 words

8

GRID ARRAY, VERY THIN PROFILE

BGA100,10X17,40

5

1 mm

85 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B100

3.6 V

1 mm

200 MHz

14 mm

549755813888 bit

2.7 V

NAND TYPE

18 mm

MTFC16GAPALHT-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

100

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

17179869184 words

8

GRID ARRAY, VERY THIN PROFILE

BGA100,10X17,40

5

1 mm

105 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B100

3.6 V

1 mm

200 MHz

14 mm

137438953472 bit

2.7 V

NAND TYPE

18 mm

MTFC32GAPALGT-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

105 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

274877906944 bit

2.7 V

NAND TYPE

13 mm

MTFC8GAMALGT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

68719476736 bit

2.7 V

NAND TYPE

13 mm

MTFC8GAMALHT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

100

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, VERY THIN PROFILE

BGA100,10X17,40

5

1 mm

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B100

3.6 V

1 mm

200 MHz

14 mm

68719476736 bit

2.7 V

NAND TYPE

18 mm

MTFC128GAPALBH-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

128GX8

128G

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B153

3.6 V

1.1 mm

200 MHz

11.5 mm

1099511627776 bit

2.7 V

e1

30

260

NAND TYPE

13 mm

MTFC8GAMALGT-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

105 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

68719476736 bit

2.7 V

NAND TYPE

13 mm

MTFC8GAMALHT-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

100

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

8589934592 words

8

GRID ARRAY, VERY THIN PROFILE

BGA100,10X17,40

5

1 mm

105 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B100

3.6 V

1 mm

200 MHz

14 mm

68719476736 bit

2.7 V

NAND TYPE

18 mm

MTFC32GAPALGT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

5

.5 mm

85 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B153

3.6 V

.8 mm

200 MHz

11.5 mm

274877906944 bit

2.7 V

NAND TYPE

13 mm

MTFC32GAPALHT-AAT

Micron Technology

FLASH CARD

INDUSTRIAL

100

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE

BGA100,10X17,40

5

1 mm

105 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B100

3.6 V

1 mm

200 MHz

14 mm

274877906944 bit

2.7 V

NAND TYPE

18 mm

MTFC32GAPALHT-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

100

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

34359738368 words

8

GRID ARRAY, VERY THIN PROFILE

BGA100,10X17,40

5

1 mm

85 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B100

3.6 V

1 mm

200 MHz

14 mm

274877906944 bit

2.7 V

NAND TYPE

18 mm

MT25QL02GCBB8E12-0SITTR

Micron Technology

FLASH

INDUSTRIAL

24

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

94 mA

268435456 words

3

8

GRID ARRAY, THIN PROFILE

BGA24,5X5,40

20

1 mm

85 Cel

3-STATE

256MX8

256M

-40 Cel

BOTTOM

HARDWARE/SOFTWARE

R-PBGA-B24

3.6 V

1.2 mm

100000 Write/Erase Cycles

133 MHz

6 mm

SPI

BOTTOM/TOP

2147483648 bit

2.7 V

NOR TYPE

.00013 Amp

8 mm

3

MTFC128GAZAQJP-AIT

Micron Technology

FLASH CARD

INDUSTRIAL

153

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

137438953472 words

1.8

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA153,14X14,20

.5 mm

85 Cel

128GX8

128G

-40 Cel

BOTTOM

R-PBGA-B153

1.95 V

1 mm

200 MHz

11.5 mm

1099511627776 bit

1.7 V

NAND TYPE

13 mm

1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.