INDUSTRIAL Flash Memory 964

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
MT29F1G08ABADAWP-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		134217728 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128MX8	128M	-40 Cel		Tin (Sn)	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm			1073741824 bit	2.7 V		e3	30	260	SLC NAND TYPE		18.4 mm	3.3
MT29F1G08ABADAWP-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		134217728 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128MX8	128M	-40 Cel		MATTE TIN	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm			1073741824 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm	3.3
MT29F2G16ABDHC-ET:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		134217728 words	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX16	128M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm			2147483648 bit	1.65 V		e1			SLC NAND TYPE		13 mm	1.8
MT29F4G01AAADDHC-ITX:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4294967296 words	3.3		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4GX1	4G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	10.5 mm			4294967296 bit	2.7 V		e1			SLC NAND TYPE		13 mm	3.3
M25P40-VMN6TPBATR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		524288 words	2.7		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K	-40 Cel			DUAL		R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm			4194304 bit	2.3 V			30	260	NOR TYPE		4.9 mm	3
MT29F16G08ABACAWP-ITZ:CTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2147483648 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2GX8	2G	-40 Cel		MATTE TIN	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm			17179869184 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm	2.7
MT29F1G01AAADDH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1073741824 words	3.3		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX1	1G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			1073741824 bit	2.7 V		e1			SLC NAND TYPE		11 mm	2.7
MT29F2G08ABAEAWP-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		268435456 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		256MX8	256M	-40 Cel		MATTE TIN	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm			2147483648 bit	2.7 V		e3	30	260	SLC NAND TYPE		18.4 mm	2.7
N25Q128A23BSF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE				1.27 mm	85 Cel		16MX8	16M	-40 Cel			DUAL		R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm		BOTTOM	134217728 bit	2.7 V			30	260	NOR TYPE		10.3 mm	3
MT29F2G08ABAEAH4-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		268435456 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm			2147483648 bit	2.7 V		e1			SLC NAND TYPE		11 mm	3.3
MTFC16GAKAECN-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16GX8	16G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm			137438953472 bit	2.7 V		e1			MLC NAND TYPE		13 mm	2.7
MTFC16GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words			8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16GX8	16G	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B100	3	3.6 V	1.2 mm			14 mm			137438953472 bit	2.7 V		e1	30	260			18 mm	2.7
MTFC32GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		34359738368 words			8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32GX8	32G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm			274877906944 bit	2.7 V		e1	30	260			18 mm	2.7
MTFC64GAKAEEY-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		68719476736 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		64GX8	64G	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			549755813888 bit	2.7 V		e1	30	260	MLC NAND TYPE		13 mm	2.7
IS21ES04G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V		e1	10	260			13 mm	3.3
IS21ES04G-JQLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3		8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3	3.6 V	1.4 mm			14 mm			34359738368 bit	2.7 V		e1	10	260			18 mm	3.3
IS21ES08G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8589934592 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1		.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			68719476736 bit	2.7 V		e1	10	260	MLC NAND TYPE		13 mm	3.3	NO
IS21ES16G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		17179869184 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1		.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			137438953472 bit	2.7 V		e1	10	260	MLC NAND TYPE		13 mm	3.3	NO
IS21ES32G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		34359738368 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1		.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel	NO	TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V		e1	10	260	MLC NAND TYPE		13 mm	3.3	NO
IS22ES04G-JCLA1	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS		4294967296 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4GX8	4G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B153	3	3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V		e1	10	260			13 mm	3.3
MT25QL256ABA8E12-1SAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		32MX8	32M	-40 Cel			BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MT25QL256ABA8E14-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32MX8	32M	-40 Cel			BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MT25QL256ABA8ESF-MSIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		8	SMALL OUTLINE				1.27 mm	85 Cel		32MX8	32M	-40 Cel			DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm			268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm	3
IS34ML01G084-TLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		134217728 words	3.3		8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128MX8	128M	-40 Cel		TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm			1073741824 bit	2.7 V		e3			SLC NAND TYPE		18.4 mm	3.3
SFSD4096N3BM1TO-I-GE-2B1-STD	Swissbit Ag	FLASH CARD	INDUSTRIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4294967296 words	3.3		8	UNCASED CHIP					85 Cel		4GX8	4G	-40 Cel			UPPER		R-XUUC-N8		3.6 V	1.1 mm		100 MHz	11 mm			34359738368 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		15 mm	3.3
MX25L12845GM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2		1.27 mm	85 Cel		32MX4	32M	-40 Cel		TIN	DUAL		R-PDSO-G8		3.6 V	2.16 mm		120 MHz	5.23 mm			134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1	e3					5.28 mm	3
MX25L12845GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE		2		1.27 mm	85 Cel		32MX4	32M	-40 Cel			DUAL		R-PDSO-G16		3.6 V	2.65 mm		120 MHz	7.52 mm			134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			10.3 mm	3
MX25L12845GXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		32MX4	32M	-40 Cel			BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm			134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25L12845GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3		4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		32MX4	32M	-40 Cel			BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm			134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25L12845GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		33554432 words	3		4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2		1.27 mm	85 Cel		32MX4	32M	-40 Cel			DUAL		R-PDSO-N8		3.6 V	.8 mm		120 MHz	6 mm			134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MX25U12835FBBI-10G	Macronix	FLASH	INDUSTRIAL	23	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8		4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2		.5 mm	85 Cel		32MX4	32M	-40 Cel			BOTTOM		R-PBGA-B23		2 V	.52 mm		104 MHz				134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1		NOT SPECIFIED	NOT SPECIFIED				1.8
MX25U12835FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	1.8		4	SMALL OUTLINE		2		1.27 mm	85 Cel		32MX4	32M	-40 Cel			DUAL		R-PDSO-G8		2 V	2.16 mm		104 MHz	5.23 mm			134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1		NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
MX25U12835FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8		4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		32MX4	32M	-40 Cel			BOTTOM		R-PBGA-B24		2 V	1.2 mm		104 MHz	6 mm			134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1		NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
MX25U51245GXDI0A	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm	SPI		536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	1.8
MX25UM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	1.8		8	SMALL OUTLINE		1		1.27 mm	85 Cel		64MX8	64M	-40 Cel			DUAL		R-PDSO-G16		2 V	2.65 mm		133 MHz	7.52 mm			536870912 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm	1.8
MX66L1G45GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		4	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		256MX4	256M	-40 Cel			BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm			1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
W25N01GWZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		134217728 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		128MX8	128M	-40 Cel			DUAL		R-PDSO-N8		1.95 V	.8 mm		104 MHz	6 mm			1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm	1.8
W25Q256JVBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm	3.3
W25Q32JVSFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3.3		8	SMALL OUTLINE		1		1.27 mm	85 Cel		4MX8	4M	-40 Cel		MATTE TIN	DUAL		R-PDSO-G16		3.6 V	2.64 mm		133 MHz	7.49 mm			33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ	e3		260			10.31 mm	3
W25Q32JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3.3		8	SMALL OUTLINE	SOP8,.3		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI		33554432 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
W25Q32JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4194304 words	3.3		8	GRID ARRAY, THIN PROFILE		1		1 mm	85 Cel		4MX8	4M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ	e1		260			8 mm	3
W25Q32JVZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		4MX8	4M	-40 Cel			DUAL		R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm			33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			6 mm	3
W25Q64JVSFIM	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP16,.4	1	20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm	SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.31 mm	3.3
W25Q64JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.3	1	20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm	SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
W25Q64JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	3.3
W25Q64JVZEIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	1	20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	3.3
W25Q64JVZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	25 mA	8388608 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1	20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm	3.3
W25M02GVZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1073741824 words	3		2	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		1GX2	1G	-40 Cel			DUAL		R-PDSO-N8		3.6 V	.8 mm		104 MHz	6 mm			2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.