Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	178144 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	179160 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	179160 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	329312 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40SO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	5.25 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	329312 bit	4.75 V		e0	30	225	.00005 Amp	12.8 mm
XC17S40SO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	329312 bit	4.5 V		e0	30	225	.00005 Amp	12.8 mm
XC17S40XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	330696 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
XC17S40XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	330696 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
XC17S05VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	53984 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S05VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	53984 bit	4.5 V		e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	54544 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	54544 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S10VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95008 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S10VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95008 bit	4.5 V		e0	30	225	.00005 Amp	4.9 mm
XC17S10XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S10XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	95752 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S20VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	178144 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	178144 bit	4.5 V		e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	179160 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	179160 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S30VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.25 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	247968 bit	4.75 V		e0	30	225	.00005 Amp	4.9 mm
XC17S30VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	247968 bit	4.5 V		e0	30	225	.00005 Amp	4.9 mm
XC17S30XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
XC17S30XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm	10 MHz	3.9 mm	Not Qualified	249168 bit	3 V		e0	30	225	.00005 Amp	4.9 mm
SN74LS600ADW	Texas Instruments	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	ASYNCHRONOUS		16384 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		16KX1	16K	0 Cel		DUAL	R-PDSO-G20		5.25 V	2.65 mm		7.5 mm	Not Qualified	16384 bit	4.75 V	DRAM IS CONFIGURED AS 4 K X 1		NOT SPECIFIED	NOT SPECIFIED		12.8 mm
MR25H256MDC	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HSON		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SYNCHRONOUS		32768 words		3.3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs	1.27 mm	125 Cel		32KX8	32K	-40 Cel		DUAL	R-PDSO-N8		3.6 V	1.05 mm		5 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	6 mm
DS2434-E	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3			ROUND	UNSPECIFIED	NO	1	CMOS		WIRE	ASYNCHRONOUS	1.5 mA	256 words			3.6/6.4	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs	1.27 mm	85 Cel		256X1	256	-40 Cel		BOTTOM	O-XBCY-W3		6.4 V				Not Qualified	256 bit	3.6 V					.000003 Amp
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S150XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10 MHz	7.5 mm	Not Qualified	1040128 bit	3 V		e0	30	225	.00005 Amp	12.8 mm
CY8C20140-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN		SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		2048 words		3		1	CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD	S-XQCC-N16	3	5.25 V	.6 mm		3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
MT9VDDT3272AG-335G4	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		3690 mA	33554432 words	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N184				167 MHz		Not Qualified	2415919104 bit						.036 Amp		.7 ns
MT9VDDT3272AG-265G4	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		3285 mA	33554432 words	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N184				133 MHz		Not Qualified	2415919104 bit						.036 Amp		.75 ns
MT9VDDT6472AG-335F1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		3645 mA	67108864 words	COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N184				167 MHz		Not Qualified	4831838208 bit						.045 Amp		.7 ns
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words		3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
SRIX4K-SBN18/1GE	STMicroelectronics	MEMORY CIRCUIT	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		128 words		3		32	UNCASED CHIP				85 Cel		128X32	128	-25 Cel		UPPER	X-XUUC-N		3.5 V				Not Qualified	4096 bit	2.5 V
SRTAG2K-DMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		256X8	256	-40 Cel		DUAL	R-PDSO-N8			.6 mm		2 mm		2048 bit							3 mm
STTS424BDN3F	STMicroelectronics	MEMORY CIRCUIT		8			RECTANGULAR	PLASTIC/EPOXY	YES				NO LEAD								SMALL OUTLINE									NICKEL PALLADIUM GOLD	DUAL	R-PDSO-N8	1					Not Qualified				e4	30	260
MR0A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	131072 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	131072 words		3.3	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V					.007 Amp	8 mm	35 ns
MR0A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	131072 words		3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.