Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
MR0A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	65 mA	131072 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	70 Cel		128KX8	128K	0 Cel			DUAL			R-PDSO-G44	3	3.6 V	1.2 mm			10.16 mm	Not Qualified		1048576 bit	3 V						.007 Amp	18.41 mm	35 ns
DSM2180F3-90T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		131072 words		5			8	FLATPACK				.65 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD			S-PQFP-G52		5.5 V	2.35 mm			10 mm	Not Qualified		1048576 bit	4.5 V		e4					10 mm
DSM2180F3V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND		ASYNCHRONOUS		131072 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN		QUAD			S-PQCC-J52		3.6 V	4.57 mm			19.1262 mm	Not Qualified		1048576 bit	3 V		e3					19.1262 mm
DSM2180F3V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		131072 words		3.3			8	FLATPACK				.65 mm	85 Cel		128KX8	128K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD			S-PQFP-G52		3.6 V	2.35 mm			10 mm	Not Qualified		1048576 bit	3 V		e4					10 mm
DSM2190F4V-15K6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND		ASYNCHRONOUS		262144 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN		QUAD			S-PQCC-J52		3.6 V	4.57 mm			19.1262 mm	Not Qualified		2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e3					19.1262 mm
DSM2190F4V-15T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		262144 words		3.3			8	FLATPACK				.65 mm	85 Cel		256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD		QUAD			S-PQFP-G52		3.6 V	2.35 mm			10 mm	Not Qualified		2097152 bit	3 V	ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY	e4					10 mm
DSM2150F5V-12T6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	80	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		262144 words		3.3			16	FLATPACK, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		256KX16	256K	-40 Cel	TIN/NICKEL PALLADIUM GOLD		QUAD			S-PQFP-G80		3.6 V	1.2 mm			12 mm	Not Qualified		4194304 bit	3 V	ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY	e3/e4	NOT SPECIFIED	NOT SPECIFIED			12 mm
XCCACEM16BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	1048576 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		1MX16	1M	-40 Cel			BOTTOM			S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified		16777216 bit	1.71 V					NOR TYPE		35 mm
XCCACEM32BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	2097152 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD		BOTTOM			S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified		33554432 bit	1.71 V		e0			NOR TYPE		35 mm
XCCACEM64BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	240 mA	4194304 words		1.8		1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories		1.27 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD		BOTTOM			S-PBGA-B388		1.89 V	2.87 mm	1000000 Write/Erase Cycles	133 MHz	35 mm	Not Qualified		67108864 bit	1.71 V		e0			NOR TYPE		35 mm
M36DR432AD10ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS	26 mA	2097152 words		1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD		BOTTOM			R-PBGA-B66		2.2 V	1.4 mm			8 mm	Not Qualified		33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0				.00001 Amp	12 mm	100 ns
AT88SC0104C-SU	Atmel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		3.3		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX1	1K	-40 Cel	MATTE TIN	1011CCCC	DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified	I2C	1024 bit	2.7 V		e3				.0001 Amp	4.925 mm
XC17S10VOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	95008 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95008 bit	4.75 V		e3	30	260		.00005 Amp	4.9 mm
XC17S10XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V		e3	30	260		.00005 Amp	4.9 mm
XC17S10XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V		e3	30	260		.00005 Amp	4.9 mm
XC17S20XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		179160 bit	3 V		e3	30	260		.00005 Amp	4.9 mm
XC17S30XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		249168 bit	3 V		e3	30	260		.00005 Amp	4.9 mm
DLPR100DWC	Texas Instruments	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES				GULL WING				2097152 words				2.5/3.3	8	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL			R-PDSO-G8	3						Not Qualified		16777216 bit				30	260		.00005 Amp
XC17S10XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	IN-LINE	TSOP8,.25	OTP ROMs		2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95752 bit	3 V		e3	30	250		.00005 Amp	9.3599 mm
XC17S30XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		249168 bit	3 V		e3	30	250		.00005 Amp	9.3599 mm
XC17S40XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		330696 bit	3 V		e3	30	250		.00005 Amp	9.3599 mm
MR2A08AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		ASYNCHRONOUS	135 mA	262144 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	125 Cel		256KX8	256K	-40 Cel			DUAL			R-PDSO-G44		3.6 V	1.2 mm			10.16 mm	Not Qualified		2097152 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.02 Amp	18.41 mm	35 ns
MR2A08AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		ASYNCHRONOUS	135 mA	262144 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	125 Cel		256KX8	256K	-40 Cel			DUAL			R-PDSO-G44		3.6 V	1.2 mm			10.16 mm	Not Qualified		2097152 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.02 Amp	18.41 mm	35 ns
CY8C24033-24PVXI	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words					1	SMALL OUTLINE, SHRINK PITCH				.635 mm	85 Cel		8KX1	8K	-40 Cel			DUAL			R-PDSO-G56		5.25 V	2.794 mm			7.5057 mm	Not Qualified		8192 bit	3 V							18.415 mm
MT29C4G48MAZAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		131072 words		1.8	FLASH+SDRAM		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER		BOTTOM			S-PBGA-B168		1.95 V	.75 mm			12 mm	Not Qualified		2097152 bit	1.7 V		e1					12 mm
MT29C2G48MAKLCJI-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs		.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER		BOTTOM			S-PBGA-B168		1.95 V	1.1 mm			12 mm	Not Qualified		2097152 bit	1.7 V		e1					12 mm
MT29C4G96MAZBBCJV-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	85 Cel		256MX16	256M	-40 Cel			BOTTOM			S-PBGA-B168		1.95 V	1 mm			12 mm			4294967296 bit	1.7 V	IT IS ALSO HAVING 4GBIT (X 32) LPDDR						12 mm
MT29C4G48MAZBBAKB-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	85 Cel		256MX16	256M	-40 Cel			BOTTOM			S-PBGA-B168		1.95 V	.8 mm			12 mm			4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED			12 mm
MT29C8G96MAZBBDJV-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		536870912 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	85 Cel		512MX16	512M	-40 Cel			BOTTOM			S-PBGA-B168		1.95 V	1 mm			12 mm			8589934592 bit	1.7 V	IT IS ALSO HAVING 4GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED			12 mm
M39L0R8090U3ZE6E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		33554432 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-40 Cel			BOTTOM			S-PBGA-B133		1.95 V	1 mm			8 mm			536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
MR10Q010CMB	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		131072 words		3.3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		128KX8	128K	-40 Cel			BOTTOM			R-PBGA-B24	3	3.6 V	1.35 mm			6 mm			1048576 bit	3 V							8 mm
ST25TA02K-AC6B5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		256 words					8	UNCASED CHIP					85 Cel		256X8	256	-40 Cel			UPPER			X-XUUC-N									2048 bit
ST25TA02KD-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		256 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		256X8	256	-40 Cel			DUAL			R-PDSO-N8			.6 mm			2 mm			2048 bit				NOT SPECIFIED	NOT SPECIFIED			3 mm
ST25TA02KD-C6H5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	5	BCC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		256 words					8	CHIP CARRIER				.4 mm	85 Cel		256X8	256	-40 Cel			BOTTOM			R-PDSO-N5			.6 mm			1.4 mm			2048 bit				NOT SPECIFIED	NOT SPECIFIED			1.7 mm
ST25TA16K-AB6B3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		8192 words					8	UNCASED CHIP					85 Cel		8KX8	8K	-40 Cel			UPPER			X-XUUC-N									65536 bit
ST25TA512-AC6B5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		64 words					8	UNCASED CHIP					85 Cel		64X8	64	-40 Cel			UPPER			X-XUUC-N									512 bit
ST25TA64K-AB6B3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		8192 words					8	UNCASED CHIP					85 Cel		8KX8	8K	-40 Cel			UPPER			X-XUUC-N									65536 bit
ST25TA02KP-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		256 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		256X8	256	-40 Cel			DUAL			R-PDSO-N8			.6 mm			2 mm			2048 bit				NOT SPECIFIED	NOT SPECIFIED			3 mm
MT29C4G48MAYBBAHK-48AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B137		1.95 V	1 mm			10.5 mm			4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260			13 mm
ST25TA02K-AC6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		256 words					8	UNCASED CHIP					85 Cel		256X8	256	-40 Cel			UPPER			O-XUUC-N									2048 bit
ST25TA02KP-C6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		262144 words					8	UNCASED CHIP					85 Cel		256KX8	256K	-40 Cel			UPPER			O-XUUC-N									2097152 bit				NOT SPECIFIED	NOT SPECIFIED
ST25TA16KAB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		8192 words					8	UNCASED CHIP					85 Cel		8KX8	8K	-40 Cel			UPPER			O-XUUC-N									65536 bit
ST25TA64K-AB6G3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		8192 words					8	UNCASED CHIP					85 Cel		8KX8	8K	-40 Cel			UPPER			O-XUUC-N									65536 bit
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm			4096 bit	4.5 V		e3	40	260			4.9 mm	400 ns
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm			4096 bit	4.5 V		e3	40	260			4.4 mm	400 ns
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm			4096 bit	4.5 V		e3	40	260			4.4 mm	400 ns
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm			4096 bit	4.5 V		e3	40	260			4.9 mm	400 ns
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL	1		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm			4096 bit	4.5 V		e3	40	260			4.4 mm	400 ns

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.