Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
SLE66R01PNBX1SA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	2	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS	38 words				32	UNCASED CHIP				70 Cel	38X32	38	-25 Cel	UPPER		X-XUUC-N2					1216 bit
EMD3D256M08G1-150CBS1R	Everspin Technologies	MEMORY CIRCUIT	OTHER	78	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.5			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	0 Cel	BOTTOM		R-PBGA-B78	1.575 V	1.2 mm	10 mm		268435456 bit	1.425 V		NOT SPECIFIED	NOT SPECIFIED	13 mm
SLE66R01PNNBX1SA2	Infineon Technologies	MEMORY CIRCUIT	OTHER	2	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS	152 words				8	UNCASED CHIP				70 Cel	152X8	152	-25 Cel	UPPER		X-XUUC-N2					1216 bit			NOT SPECIFIED	NOT SPECIFIED
ST25TB02K-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD		2048 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	2KX1	2K	-40 Cel	UNSPECIFIED		O-XUUC-N					2048 bit
ST25TB04K-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	4	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4096 words				1	UNCASED CHIP				85 Cel	4KX1	4K	-40 Cel	UPPER		R-XUUC-N4					4096 bit
ST25TB512-AT6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	ROUND	UNSPECIFIED	YES	1		NO LEAD		512 words				1	UNCASED CHIP	DIE OR CHIP			85 Cel	512X1	512	-40 Cel	UNSPECIFIED		O-XUUC-N					512 bit
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	524288 words	3.3			8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel	512KX8	512K	-40 Cel	DUAL		R-PDSO-G8	3.6 V	1.73 mm	5.3 mm		4194304 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED	5.85 mm
MR45V200BRAZAARL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	262144 words	3.3			8	IN-LINE			2.54 mm	85 Cel	256KX8	256K	-40 Cel	DUAL		R-PDIP-T8	3.6 V		7.62 mm		2097152 bit	2.7 V				9.2 mm
RP-SMLE04DA1	Panasonic	MEMORY CIRCUIT	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4294967296 words				8	UNCASED CHIP				85 Cel	4GX8	4G	-25 Cel	UPPER		R-XUUC-N					34359738368 bit			NOT SPECIFIED	NOT SPECIFIED
MR44V100AMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	131072 words	3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel	128KX8	128K	-40 Cel	DUAL		R-PDSO-G8	3.6 V	1.65 mm	3.9 mm		1048576 bit	1.8 V				4.9 mm
MR45V032AMAZBATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	4096 words	3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel	4KX8	4K	-40 Cel	DUAL		R-PDSO-G8	3.6 V	1.65 mm	3.9 mm		32768 bit	2.7 V				4.9 mm
HMC-EF183	Omron	MEMORY CIRCUIT			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		134217728 words				8	UNCASED CHIP					128MX8	128M		UPPER		R-XUUC-N					1073741824 bit			NOT SPECIFIED	NOT SPECIFIED
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel	256MX16	256M	-25 Cel	BOTTOM		S-PBGA-B168	1.95 V	.9 mm	12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE	NOT SPECIFIED	NOT SPECIFIED	12 mm	25 ns
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-25 Cel	BOTTOM		S-PBGA-B168	1.95 V	.75 mm	12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE	NOT SPECIFIED	NOT SPECIFIED	12 mm
MT29C4G96MAZBACJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256MX16	256M	-40 Cel	BOTTOM		S-PBGA-B168	1.95 V	.9 mm	12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE	NOT SPECIFIED	NOT SPECIFIED	12 mm
MT29C8G96MAZBADJV-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	512MX16	512M	-40 Cel	BOTTOM		S-PBGA-B168	1.95 V	1 mm	12 mm		8589934592 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE	NOT SPECIFIED	NOT SPECIFIED	12 mm
AF4GUDI-OEM	Atp Electronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD		4294967296 words				8	UNCASED CHIP				85 Cel	4GX8	4G	-40 Cel	UPPER		X-XUUC-N					34359738368 bit
AF8GUD3-OEM	Atp Electronics	MEMORY CIRCUIT	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD		8589934592 words				8	UNCASED CHIP				85 Cel	8GX8	8G	-25 Cel	UPPER		X-XUUC-N					68719476736 bit
MT29C1G12MAAIVAMD-5ITTR	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel	128MX8	128M	-40 Cel	BOTTOM		R-PBGA-B130	1.95 V	1 mm	8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16	NOT SPECIFIED	NOT SPECIFIED	9 mm
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	8192 words	3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	8KX8	8K	-40 Cel	DUAL	1	R-PDSO-G8	3.6 V	1.75 mm	3.9 mm		65536 bit	2.7 V				4.9 mm	550 ns
MF1SEP1001DA4/03J	NXP Semiconductors	NFC/RFID TAGS AND TRANSPONDERS			XMA	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1024 words				8	MICROELECTRONIC ASSEMBLY				70 Cel	1KX8	1K	-25 Cel	UNSPECIFIED		R-PXMA-N					8192 bit

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.