Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words	5	EEPROM+SRAM	8	SMALL OUTLINE	SOP8,.23	1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm	16384 bit	4.5 V		e3	40	260	4.9 mm	400 ns
47L04T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	512 words		EEPROM+SRAM	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	.65 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm	4096 bit	2.7 V		e3	40	260	4.4 mm	400 ns
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	2048 words		EEPROM+SRAM	8	IN-LINE	DIP8,.3	2.54 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	7.62 mm	16384 bit	2.7 V		e3			9.271 mm	400 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM	8	SMALL OUTLINE	SOP8,.23	1.27 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	3.9 mm	16384 bit	2.7 V		e3	40	260	4.9 mm	400 ns
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	.65 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm	16384 bit	2.7 V		e3	40	260	4.4 mm	400 ns
47L16T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	.65 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm	16384 bit	2.7 V		e3	40	260	4.4 mm	400 ns
SMC128AFB6E	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	134217728 words			8	UNCASED CHIP			85 Cel	128MX8	128M	-40 Cel		UPPER		X-XUUC-N					1073741824 bit
SMC512AFB6E	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	536870912 words			8	UNCASED CHIP			85 Cel	512MX8	512M	-40 Cel		UPPER		X-XUUC-N					4294967296 bit
MT29C1G12MAAIVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAIYAMR-5AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	128MX8	128M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAJVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C1G12MAAJYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	64MX16	64M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
THGBMGG9U4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		68719476736 words			8	GRID ARRAY			85 Cel	64GX8	64G	-25 Cel		BOTTOM		R-PBGA-B153					549755813888 bit
THGBMGT0U8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		137438953472 words			8	GRID ARRAY			85 Cel	128GX8	128G	-25 Cel		BOTTOM		R-PBGA-B153					1099511627776 bit
THGBMHG6C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		8589934592 words			8	GRID ARRAY			85 Cel	8GX8	8G	-25 Cel		BOTTOM		R-PBGA-B153					68719476736 bit
THGBMHG6C1LBAU6	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		8589934592 words			8	GRID ARRAY			105 Cel	8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B153					68719476736 bit
THGBMHG7C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		17179869184 words			8	GRID ARRAY			85 Cel	16GX8	16G	-25 Cel		BOTTOM		R-PBGA-B153					137438953472 bit
THGBMHG7C2LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		17179869184 words			8	GRID ARRAY			105 Cel	16GX8	16G	-40 Cel		BOTTOM		R-PBGA-B153					137438953472 bit
THGBMHG8C2LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		34359738368 words			8	GRID ARRAY			85 Cel	32GX8	32G	-25 Cel		BOTTOM		R-PBGA-B153					274877906944 bit
THGBMHG8C4LBAU7	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		34359738368 words			8	GRID ARRAY			105 Cel	32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B153					274877906944 bit
THGBMHG9C4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		68719476736 words			8	GRID ARRAY			85 Cel	64GX8	64G	-25 Cel		BOTTOM		R-PBGA-B153					549755813888 bit
THGBMHG9C8LBAU8	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		68719476736 words			8	GRID ARRAY			105 Cel	64GX8	64G	-40 Cel		BOTTOM		R-PBGA-B153					549755813888 bit
THGBMHT0C8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		137438953472 words			8	GRID ARRAY			85 Cel	128GX8	128G	-25 Cel		BOTTOM		R-PBGA-B153					1099511627776 bit
THGBMHG6C1LBAWL	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8589934592 words			8	GRID ARRAY			85 Cel	8GX8	8G	-40 Cel		BOTTOM		R-PBGA-B153					68719476736 bit
THGBMHG7C2LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	17179869184 words			8	GRID ARRAY			85 Cel	16GX8	16G	-40 Cel		BOTTOM		R-PBGA-B153					137438953472 bit
THGBMHG8C4LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	34359738368 words			8	GRID ARRAY			85 Cel	32GX8	32G	-40 Cel		BOTTOM		R-PBGA-B153					274877906944 bit
THGBMHG9C8LBAWG	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	68719476736 words			8	GRID ARRAY			85 Cel	64GX8	64G	-40 Cel		BOTTOM		R-PBGA-B153					549755813888 bit
ST25TA512-AC6G5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	RECTANGULAR		YES	1	CMOS	NO LEAD	ASYNCHRONOUS	512 words			8	UNCASED CHIP	DIE OR CHIP		85 Cel	64X8	64	-40 Cel		UNSPECIFIED		R-XUUC-N					512 bit
M24SR04-GSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	ROUND	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS	512 words	3.3		8	UNCASED CHIP	WAFER			512X8	512			UNSPECIFIED		O-XUUC-N		5.5 V			4096 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	65536 words			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	105 Cel	64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm	2.9 mm	65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	65536 words			1	SMALL OUTLINE		1.27 mm	105 Cel	64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm	3.9 mm	65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	4.9 mm
M24SR64-YSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	RECTANGULAR		YES	1	CMOS		SYNCHRONOUS	8192 words	3.3		8	UNCASED CHIP	DIE OR CHIP			8KX8	8K			UNSPECIFIED		R-XUUC-N		5.5 V			65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED
M24SR02-YSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS	2048 words	3.3		1	UNCASED CHIP				2KX1	2K			UPPER		X-XUUC-N		5.5 V			2048 bit	2.7 V
ST25TB512-AC6G6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	16 words			32	UNCASED CHIP			85 Cel	16X32	16	-40 Cel		UPPER		X-XUUC-N					512 bit
2988146	Phoenix Contact	MEMORY CIRCUIT			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	536870912 words			8	UNCASED CHIP				512MX8	512M			UPPER		R-XUUC-N					4294967296 bit				NOT SPECIFIED	NOT SPECIFIED
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	4294967296 words	1.2		4	GRID ARRAY		1 mm	105 Cel	4GX4	4G	0 Cel		BOTTOM		S-PBGA-B896		1.26 V	4.2 mm	31 mm	17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED	31 mm
MT29C2G24MAAAAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAABAHAMD-5EIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C2G24MAABAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
MT29C2G24MAABAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	32MX32	32M	-40 Cel		BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16				9 mm
MT29C4G48MAZBAAKS-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM		R-PBGA-B137		1.95 V	1 mm	10.5 mm	2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C4G96MAYBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.1 mm	10.5 mm	2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C4G96MAZBACKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.1 mm	10.5 mm	2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C8G96MAZBADKD-5IT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.1 mm	10.5 mm	2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C8G96MAZBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel	64MX32	64M	-25 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.1 mm	10.5 mm	2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED	13 mm
MT29C1G12MAACVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C1G12MAACYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm
MT29C1G12MAADVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B130		1.95 V	1 mm	8 mm	536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260	9 mm

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.