RECTANGULAR SRAM 439

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M48Z2M1Y-70PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2MX8	2M		0 Cel		DUAL	1	R-PDIP-T36		5.5 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	NOT SPECIFIED	NOT SPECIFIED	YES	.008 Amp	52.96 mm	70 ns
HT6256DC	Honeywell	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	225 Cel		3-STATE	32KX8	32K	2.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	4.445 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00033 Amp	35.56 mm	50 ns
DS1225Y-150-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		150 ns
DS1225AD-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		200 ns
DS1225AD-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		70 ns
DS1230Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			32KX8	32K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		70 ns
DS1230Y-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			32KX8	32K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		200 ns
DS1245AB-120-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel			128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32		5.25 V				Not Qualified	1048576 bit	4.75 V		e0				.005 Amp		120 ns
DS1245Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel			128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		70 ns
SN74AS870DWR	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	16X4	16		0 Cel		DUAL	2	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE				NO		15.4 mm	15 ns
M48Z128-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.004 Amp	42.8 mm	70 ns
M48Z128Y-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3		225	YES	.004 Amp	42.8 mm	70 ns
M48Z128Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.004 Amp	42.8 mm	85 ns
M48Z512AY-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	512KX8	512K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.005 Amp	42.8 mm	70 ns
M48Z512A-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	512KX8	512K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm		15.24 mm	Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.005 Amp	42.8 mm	70 ns
M48Z02-150PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
M48Z02-200PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z02-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
M48Z12-200PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z12-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e3			YES	.003 Amp	34.545 mm
IDT71024S15TYI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3	5.5 V	3.759 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	15 ns
LH5164A-10L	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	-10 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.2 mm		15.24 mm	Not Qualified	65536 bit	4.5 V					YES		36 mm	100 ns
71V35761S183BGGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp	22 mm	3.3 ns
71V35761S183BGGI	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp	22 mm	3.3 ns
CY14MB256J2-SXI	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		3	3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm	Not Qualified	262144 bit	2.7 V		e4		260		.00015 Amp	4.889 mm
CY62147EV30LL-45B2XA	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	4194304 bit	2.2 V		e1				.000007 Amp	8 mm	45 ns
M48Z18-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE		SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	100 ns
M48Z35-70PC1	STMicroelectronics	SRAM STD	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	4.75 V		e3			YES	.003 Amp	39.625 mm	70 ns
M48Z58-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Matte Tin (Sn)	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	70 ns
M48Z58Y-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	70 ns
IDT71256SA20Y	Integrated Device Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.015 Amp	17.9324 mm	20 ns
DS1220Y-100-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel			2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V		e0				.004 Amp		100 ns
DS1250Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	512KX8	512K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDIP-T32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0			YES	.005 Amp		70 ns
IDT71256SA25YI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.015 Amp	17.9324 mm	25 ns
M48Z129V-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel			128KX8	128K		0 Cel	MATTE TIN	DUAL		R-PDIP-T32	1	3.6 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	3 V		e3				.003 Amp	42.8 mm	85 ns
M48Z512AV-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel			512KX8	512K		0 Cel	MATTE TIN	DUAL		R-PDIP-T32		3.6 V	9.52 mm		15.24 mm	Not Qualified	4194304 bit	3 V		e3				.003 Amp	42.8 mm	85 ns
IS66WVE4M16EALL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	NO	3-STATE	4MX16	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V		e1		260	NO	.00015 Amp	8 mm	70 ns
23A256-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	262144 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.9 mm
23A640-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		1.95 V	5.334 mm	16 MHz	7.62 mm	Not Qualified	65536 bit	1.5 V		e3			NO	.000001 Amp	9.271 mm
23A640-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.9 mm
23A640-I/ST	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel		3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	1.95 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.4 mm
23K256-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	262144 bit	2.7 V		e3			NO	.000004 Amp	9.271 mm
CY7C1041CV33-12ZSXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		3-STATE	256KX16	256K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260			18.415 mm	12 ns
MT45W4MW16PCGA-70IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1	30	260		.00014 Amp	8 mm	70 ns
MT45W4MW16PCGA-70LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1				.00012 Amp	8 mm	70 ns
IS61C25616AL-10KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel			256KX16	256K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J44		5.5 V	3.75 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	10	260			28.575 mm	10 ns
CY7C1020CV33-15ZSXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		3-STATE	32KX16	32K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.63 V	1.194 mm		10.16 mm	Not Qualified	524288 bit	2.97 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY7C1021BN-15ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.01 Amp	18.415 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.