RECTANGULAR SRAM 439

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1021BN-15VXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44		5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4					28.575 mm	15 ns
CY7C1019CV33-12ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		128KX8	128K		0 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e3	20	260			20.95 mm	12 ns
CY7C1021BN-15VXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K		0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44		5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4					28.575 mm	15 ns
CY7C1518KV18-250BZXC	Cypress Semiconductor	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	430 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260			15 mm	.45 ns
BQ4010LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-XDMA-T28		3.6 V	9.53 mm		18.415 mm	Not Qualified	65536 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp	37.72 mm	70 ns
CY62256VNLL-70ZIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	2.7 V							11.8 mm	70 ns
CY7C1480V33-200AXCT	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		2MX36	2M		0 Cel	MATTE TIN/NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3/e4					20 mm	3 ns
MT45W2MW16BGB-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON		1.8,1.8/3.3	16	GRID ARRAY	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1	30	260		.00011 Amp	8 mm	70 ns
MT45W2MW16PGA-70IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON		1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1				.00011 Amp	8 mm	70 ns
CD74HCT670M96G4	Texas Instruments	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4		-55 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			9.9 mm	53 ns
CD74HCT670MTG4	Texas Instruments	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4		-55 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			9.9 mm	53 ns
MT45W8MW16BGX-856AT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8388608 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	105 Cel		8MX16	8M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1					10 mm	85 ns
IS61WV51216BLL-10MLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	8388608 bit	2.4 V		e1	30	260		.02 Amp	11 mm	10 ns
CY7C1061BV33-8ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e3	30	260			22.415 mm	8 ns
DS38464-070	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		3.3		40	MICROELECTRONIC ASSEMBLY				70 Cel		64KX40	64K		0 Cel	TIN LEAD	SINGLE		R-XSMA-N72		3.6 V				Not Qualified	2621440 bit	3 V		e0						70 ns
AS6C4008-55BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		BOTTOM		R-PBGA-B36	3	5.5 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	8 mm	55 ns
AS6C4008-55STIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	1.25 mm		8 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	11.8 mm	55 ns
AS6C4008-55TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	18.4 mm	55 ns
AS6C1008-55TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V			40	260			18.4 mm	55 ns
IS61WV25616BLS-25TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.4 V		e3	10	260		.009 Amp	18.415 mm	25 ns
MT45W2MW16BGB-701ITTR	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					8 mm	70 ns
BQ4013LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDMA-P32		3.6 V	9.53 mm		15.24 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp	42.8 mm	70 ns
BQ4015LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDMA-P32		3.6 V				Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp		70 ns
BQ4011LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDMA-P28		3.6 V	9.53 mm		18.415 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.001 Amp	37.72 mm	70 ns
IS61WV51232BLL-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	90	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90	3	3.6 V	1.45 mm		8 mm	Not Qualified	16777216 bit	2.4 V		e1	10	260			13 mm	10 ns
70V631S12PRFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	515 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.15 V		e0	30	225		.015 Amp	20 mm	12 ns
71V25761S183BGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.3 ns
71V3557S75BGI8	Integrated Device Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0	20	225			22 mm	7.5 ns
71V35761S183BGG8	Integrated Device Technology	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	22 mm	3.3 ns
71V35761S183BGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.3 ns
CY22E016L-SZ45XC	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		2KX8	2K		0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm		7.505 mm	Not Qualified	16384 bit	4.5 V		e4		260			17.905 mm	45 ns
CY7C1059DV33-12ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX8	1M	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e3	40	260		.02 Amp	18.415 mm	12 ns
AS7C31026C-12BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	3 V		e3/e6	40	260			8 mm	12 ns
LH5116-10F	Sharp Corporation	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-PDIP-T24		5.5 V	5.3 mm		15.24 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			31 mm	100 ns
M48Z512BV-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDMA-P32		3.6 V				Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.003 Amp		85 ns
CY7C1470BV25-200BZI	Cypress Semiconductor	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e0					17 mm	3 ns
74HC670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm		3.9 mm	Not Qualified	16 bit	2 V		e4	30	260	NO		9.9 mm	59 ns
74HC670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V		e4					6.2 mm	59 ns
74HC670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm		5.3 mm	Not Qualified	16 bit	2 V		e4					6.2 mm	59 ns
74HC670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm		7.62 mm	Not Qualified	16 bit	2 V		e4			NO		21.6 mm	59 ns
74HCT670D,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		e4			NO		9.9 mm	60 ns
74HCT670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	16 bit	4.5 V		e4			NO		9.9 mm	60 ns
PCF8570P/F5,112	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T8		6 V	4.2 mm	.1 MHz	7.62 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO	.0000004 Amp	9.5 mm
PCF8570T/F5,512	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.2 mA	256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G8	2	6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4		260	NO	.0000004 Amp	7.55 mm	3400 ns
PCF8570T/F5,518	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.4	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G8	2	6 V	2.65 mm	.1 MHz	7.5 mm	Not Qualified	2048 bit	2.5 V	2-WIRE I2C SERIAL INTERFACE	e4			NO		7.55 mm	3400 ns
IS62WV1288BLL-55HLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.5 V		e3					11.8 mm	55 ns
IS62WV1288BLL-55QLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	3 mm		11.305 mm	Not Qualified	1048576 bit	2.5 V		e3	30	260			20.445 mm	55 ns
IS62WV1288BLL-55TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.5 V		e3					18.4 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.