RECTANGULAR SRAM 439

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT45W2MW16PGA-70ITTR	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1					8 mm	70 ns
MT45W4MW16BCGB-701ITTR	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1	30	260			8 mm	70 ns
MT45W4MW16BCGB-708WTTR	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1					8 mm	70 ns
MT45W8MW16BGX-708WTTR	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		8388608 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1		260			10 mm	70 ns
N01L63W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04L63W2AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns
N04L63W2AT27IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04L63W2AT27I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N25S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	262144 bit	1.7 V		e3	30	260		.0000005 Amp	4.9 mm
N25S818HAT21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.1 mm	16 MHz	3 mm	Not Qualified	262144 bit	1.7 V		e3	30	260		.0000005 Amp	4.4 mm
N01L83W2AN25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	11.8 mm	70 ns
N01L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.4 mm	70 ns
N02L63W3AB25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L63W3AB25I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L63W3AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N64S830HAS22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	2.5/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.3 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	65536 bit	2.5 V		e3	30	260		.000004 Amp	4.9 mm
N64S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	8KX8	8K	2.3 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.2 mm	20 MHz	3 mm	Not Qualified	65536 bit	2.5 V		e3	30	260		.000004 Amp	4.4 mm
N02L83W2AN25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	11.8 mm	70 ns
N02L83W2AN25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	11.8 mm	70 ns
N02L83W2AT25I	Onsemi	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX8	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.25 mm		8 mm	Not Qualified	2097152 bit	2.3 V						.00001 Amp	18.4 mm	70 ns
N08L63W2AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		8 mm	Not Qualified	8388608 bit	2.3 V						.00001 Amp	10 mm	85 ns
N25S830HAS22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.91 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.000004 Amp	4.9 mm
N25S830HAT22I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	3.6 V	1.1 mm	20 MHz	3 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.000004 Amp	4.4 mm
N01L63W3AT25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N04L63W1AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns
N04L63W1AT27I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.25 mm		10.16 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	18.41 mm	70 ns
N08L6182AB7I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	14 mA	524288 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	2.2 V	1.2 mm		8 mm	Not Qualified	8388608 bit	1.65 V						.00001 Amp	10 mm	85 ns
N64S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	65536 bit	1.7 V		e3	30	260		.0000005 Amp	4.9 mm
N64S818HAT21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	85 Cel	3-STATE	8KX8	8K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.1 mm	16 MHz	3 mm	Not Qualified	65536 bit	1.7 V		e3	30	260		.0000005 Amp	4.4 mm
UPD44644182AF5-E40-FQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	4194304 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	15 mm	Not Qualified	75497472 bit	1.7 V							17 mm	.45 ns
DS1258W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	MICROELECTRONIC ASSEMBLY				70 Cel		128KX16	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-P40		3.6 V				Not Qualified	2097152 bit	3 V		e0						100 ns
M68AW256ML70ND6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	18.41 mm	70 ns
IDT71024S12TYI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	12 ns
IDT71024S15TYI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	15 ns
M48Z35AV-10PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		3.6 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	3 V		e3				.003 Amp	39.625 mm	100 ns
M68AW256ML70ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		7 mm	Not Qualified	4194304 bit	2.7 V		e0				.000009 Amp	8 mm	70 ns
M68AW128ML70ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	2097152 bit	2.7 V						.000009 Amp	8 mm	70 ns
CY7C1019BV33-15ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V							20.95 mm	15 ns
M68AW512ML70ND6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		512KX16	512K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V		e0					18.41 mm	70 ns
CY7C1383C-100AC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.07 Amp	20 mm	8.5 ns
SNJ54LS670W	Texas Instruments	STANDARD SRAM	MILITARY	16	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	TTL	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	FLATPACK	FL16,.3	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-55 Cel	TIN LEAD	DUAL		R-GDFP-F16		5.25 V	2.03 mm	35 MHz	6.73 mm	Not Qualified	16 bit	4.75 V		e0			NO	.05 Amp	10.3 mm	45 ns
MT45W4MW16BFB-706WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0				.00012 Amp	8 mm	70 ns
MT45W4MW16PFA-70IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e0				.00012 Amp	8 mm	70 ns
MT45W4MW16PFA-70WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e0				.00012 Amp	8 mm	70 ns
STK20C04-WF25I	Simtek	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	512 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		512X8	512		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.57 mm		15.24 mm	Not Qualified	4096 bit	4.5 V		e3		260		.00075 Amp	36.83 mm	25 ns
M48Z2M1V-85PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words		3.3	3.3	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDIP-T36		3.6 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	52.96 mm	85 ns
M68AW031AM70N6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	1.25 mm		8 mm	Not Qualified	262144 bit	2.7 V		e0				.000006 Amp	11.8 mm	70 ns
MT45W2MW16PABA-70IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e8	30	260		.00011 Amp	8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.