YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STB12NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

200 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.41 ohm

10 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

BUK221-50DY,118

NXP Semiconductors

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

60 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

4 A

SINGLE

R-PSSO-G6

Not Qualified

BUK7109-75ATE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

120 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK764R3-40B,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

254 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

706 A

961 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0043 ohm

176 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

BUK9609-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

211 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

433 A

400 mJ

108 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.01 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK98150-55A,135

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

22 mJ

5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.161 ohm

5.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

BUK98180-100A,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

16 mJ

4.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.201 ohm

4.6 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

BUK9875-100A,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

49 mJ

7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.084 ohm

7 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

IRFR220,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

19 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.8 ohm

4.8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

e3

PH16030L,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

16.9 ohm

38 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL

MO-235

e3

PH3830L,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

290 A

250 mJ

98 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0049 ohm

98 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

PH5330E,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

130 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0085 ohm

80 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

PH6030L,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

95 mJ

76.7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0097 ohm

76.7 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

PHB101NQ04T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

157 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

PHB108NQ03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

180 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0075 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PHB110NQ06LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

280 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0093 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

PHB119NQ06T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

280 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0071 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

PHB143NQ04T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

475 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0052 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

PHB153NQ08LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0066 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

PHB160NQ08T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0056 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

PHB38N02LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

179 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

44.7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e3

PHD16N03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.067 ohm

16 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

PHD22NQ20T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42.2 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.12 ohm

21.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

PHD34NQ10T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

170 mJ

35 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.04 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

PHD36N03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

57.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173.6 A

43.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.04 ohm

43.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

PHD82NQ03LT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

PHK12NQ10T,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.9 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

65 mJ

11.6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.028 ohm

11.6 A

DUAL

R-PDSO-G8

2

Not Qualified

MS-012AA

e4

30

260

PHM12NQ20T,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.085 ohm

20.4 A

DUAL

R-PDSO-N2

DRAIN

Not Qualified

PHM15NQ20T,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

210 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.085 ohm

17.5 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

PHM18NQ15T,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

76 A

170 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.075 ohm

19 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

PHM21NQ15T,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

250 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.055 ohm

22.2 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

PHM25NQ10T,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

170 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.03 ohm

30.7 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

PIP3107-D,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.055 ohm

16 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e3

PSMN003-30B,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.004 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PSMN9R0-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

46 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

223 A

16 mJ

61 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0138 ohm

55 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

PD85035-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

8 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

PD85035S-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

8 A

DUAL

R-PDSO-F2

3

SOURCE

Not Qualified

e3

PD85035STR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

8 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PD85035TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

95 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

8 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STD100N3LF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

500 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0055 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

260

STB300NH02L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

1600 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0018 ohm

120 A

SINGLE

R-PSSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

VNB35N0713TR

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

MATTE TIN

.035 ohm

SINGLE

R-PSSO-G2

1

TO-263

30

245

STS2DPF80

STMicroelectronics

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8 A

2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

STV160NF02LAT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

330 mJ

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0037 ohm

160 A

DUAL

R-PDSO-G10

DRAIN

Not Qualified

STV160NF03LAT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

330 mJ

10

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.004 ohm

160 A

DUAL

R-PDSO-G10

Not Qualified

AVALANCHE RATED

STV300NH02L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

UNSPECIFIED

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1120 A

2296 mJ

280 A

10

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.001 ohm

280 A

DUAL

R-XDSO-G10

3

Not Qualified

e3

30

250

IPB114N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

210 A

30 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0114 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

e3

245

STB185N55F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

330 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

1000 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0035 ohm

120 A

SINGLE

R-PSSO-G2

1

Not Qualified

ULTRA-LOW RESISTANCE

e3

30

245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.