YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

2SK3811-ZP-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

213 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

2SK3901(0)-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

64 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

2SK3902(0)-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

45 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

NOT SPECIFIED

NOT SPECIFIED

NP110N03PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP110N04PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP52N055SUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

56 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

77 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SDG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

77 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

77 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

NP60N03KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP70N10KUF-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

NOT SPECIFIED

NOT SPECIFIED

NP70N10KUF-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

NOT SPECIFIED

NOT SPECIFIED

NP82N03PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

143 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

NP82N055PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

143 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

NP88N03KDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

NP88N04KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

NP88N055KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

NP88N055KUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

UPA1727G-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

10 A

e6

UPA1763G-E1-AT

Renesas Electronics

N-CHANNEL

YES

2 W

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.5 A

e3

260

UPA1763G-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

UPA1763G-E2-A

Renesas Electronics

N-CHANNEL

YES

2 W

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

UPA1764G-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

7 A

e6

UPA1764G-E2-AZ

Renesas Electronics

N-CHANNEL

YES

2 W

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

NOT SPECIFIED

NOT SPECIFIED

UPA1803GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

UPA1890GR-9JG-E1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

e6

NTD4863NAT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

98 A

60.5 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.014 ohm

9.2 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

DMN2009LSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

12 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.008 ohm

12 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e3

260

STB14NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

300 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

12 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

STB24NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

76 A

500 mJ

19 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

19 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

STD10NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

300 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.48 ohm

9 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

BSC240N12NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

120 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

148 A

50 mJ

37 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.024 ohm

37 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SPB100N03S2-03G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.003 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

245

SPB10N10LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42.2 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.21 ohm

10.3 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

245

SIHFR430ATR-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

130 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.7 ohm

5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

SIHFR430ATRL-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

130 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.7 ohm

5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

SIHFR430ATRR-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

130 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.7 ohm

5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FDC642P_F085

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

72 mJ

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

4 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDS8949_F085

Fairchild Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20 A

26 mJ

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.029 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

FDS8984_F085

Fairchild Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

32 mJ

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.023 ohm

7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

CSD75211W1723

Texas Instruments

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

4.5 A

12

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.07 ohm

4.5 A

BOTTOM

R-PBGA-B12

1

Not Qualified

e1

30

260

NTD5413NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

84 A

135 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.026 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

260

SI7790DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

69 W

UNSPECIFIED

SWITCHING

40 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

70 A

80 mJ

50 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0045 ohm

50 A

DUAL

R-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

DMC3036LSD-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

6.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.036 ohm

6.9 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

260

DMP3035LSS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

12 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.016 ohm

12 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

260

DMP3100L-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.08 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.1 ohm

2.7 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD, HIGH RELIABILITY

e3

30

260

SPB80P06P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

340 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

824 mJ

80 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e0

220

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.