YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
NTD15N06LT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
STD35NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	300 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0215 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3	30	260
STS4DNFS30L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.065 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
NTD30N02T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	50 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.0145 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD80N02T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTD80N02	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.0058 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
STB20NM60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	192 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	650 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.29 ohm	20 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
STB85NF55LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	980 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.01 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
SPB10N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	41.2 A	60 mJ	10.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.17 ohm	10.3 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
SPB21N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	84 A	130 mJ	21 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.08 ohm	21 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
SPD100N03S2L-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	325 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0063 ohm	100 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-252	e3
SPD11N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	41.2 A	60 mJ	10.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.17 ohm	10.5 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3		260
SPD35N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	245 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.044 ohm	35 A	SINGLE	R-PSSO-G2	3		Not Qualified	AVALANCHE RATED		e3		260
STC5NF20V	STMicroelectronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.045 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4
STS4NF100	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.07 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
SPB35N10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	245 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.044 ohm	35 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
SPD22N08S2L-50	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	58 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	94 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.065 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e3
STD30NF06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	230 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON			.028 ohm	28 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252		NOT SPECIFIED	NOT SPECIFIED
STB12NM50FDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	400 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.4 ohm	12 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
STB9NK70ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	115 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	230 mJ	7.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.2 ohm	7.5 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
STS17NF3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A		17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		NICKEL PALLADIUM GOLD	.007 ohm	17 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
STS25NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	1300 mJ	25 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.005 ohm	25 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	40	260
STD2NM60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	250 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	3.2 ohm	2 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3
STB160NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	640 A	1200 mJ	160 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.004 ohm	160 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
STT2PF60L	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.3 ohm	2 A	DUAL	R-PDSO-G6	1		Not Qualified	LOW THRESHOLD		e3		260
STS4DPF30L	STMicroelectronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.1 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	225
NTB90N02	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.0058 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FQD17P06TF	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	300 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.135 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQB13N10TM	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51.2 A	95 mJ	12.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.18 ohm	12.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
FQB14N30TM	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	147 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	57.6 A	600 mJ	14.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.29 ohm	14.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
FQD19N10LTF	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62.4 A	220 mJ	15.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.11 ohm	15.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQD2N80TF	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	180 mJ	1.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	6.3 ohm	1.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQD30N06LTM	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	400 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.047 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQD5P10TF	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.4 A	55 mJ	3.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.05 ohm	3.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQD7P20TF	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22.8 A	570 mJ	5.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.69 ohm	5.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
SFM9014TF	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	8.3 mJ	1.8 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.5 ohm	1.8 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
SFR9024TM	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	31 A	104 mJ	7.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.28 ohm	7.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQD11P06TF	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37.6 A	160 mJ	9.4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.185 ohm	9.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
FQD12N20LTF	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	210 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.32 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
NTB18N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
STB15NK50ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	300 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.34 ohm	14 A	SINGLE	R-PSSO-G2	1		Not Qualified	HIGH VOLTAGE		e3
STS4DNF30L	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.06 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
STB9NK50ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28.8 A	190 mJ	7.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.85 ohm	7.2 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	245
STC6NF30V	STMicroelectronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.03 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4
STD30PF03LT4	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	850 mJ	24 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.04 ohm	24 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
STD38NH02LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	152 A	250 mJ	38 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0135 ohm	38 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-252AA	e3
STD5NK60ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	220 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	1.6 ohm	5 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
STD90NH02LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	95 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	600 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.006 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.