YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
STB200NF04T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1300 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0037 ohm	120 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	245
STD55NH2LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	600 mJ	55 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0135 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3
FDD24AN06LA0_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		32 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.019 ohm	7.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260	AEC-Q101
FQB22P10TM_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	710 mJ	22 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.125 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
NTTFS4823NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32.9 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	150 A	31 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.0175 ohm	12.6 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NTD60N02RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		60 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0105 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTB5605PT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	17 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.14 ohm	18.5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTB5605P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	17 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.14 ohm	18.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
STB11NM60FDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	350 mJ	11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.45 ohm	11 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	245
SPN03N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A		.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1.4 ohm	.7 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified		TO-261AA	e0		255
STB21NK50Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	190 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	850 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.27 ohm	17 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
STB30NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	190 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	108 A	900 mJ	27 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.115 ohm	27 A	SINGLE	R-PSSO-G2	1	ISOLATED	Not Qualified		TO-263AB	e3	30	245
STB35N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	108 A	800 mJ	27 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.098 ohm	27 A	SINGLE	R-PSSO-G2	1	ISOLATED	Not Qualified		TO-263AB	e3	30	245
STD150N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	525 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0045 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD8NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	200 mJ	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.7 ohm	7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NTD3055-094G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.094 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e3		260
RTQ040P02TR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.055 ohm	4 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
BSF045N03MQ3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28 W	METAL	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	252 A	30 mJ	63 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0059 ohm	18 A	BOTTOM	R-MBCC-N2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
STK30N2LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.0036 ohm	30 A	DUAL	R-XDSO-N4		DRAIN	Not Qualified			e3
NTD60N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		60 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0105 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD70N03R-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	71.7 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.013 ohm	32 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTD70N03RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.56 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	71.7 mJ	62.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.013 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTHD3100CT1	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.08 ohm	2.9 A	DUAL	R-XDSO-C8			Not Qualified			e0		235
NTHS2101PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	UNSPECIFIED	SWITCHING	8 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	7.5 A		5.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.025 ohm	5.4 A	DUAL	R-XDSO-C8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTB25P06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	600 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.082 ohm	27.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTF3055L108T3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	74 mJ	3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.12 ohm	3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e3	30	260
NTF3055L108T3LFG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	74 mJ	3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.12 ohm	3 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified		TO-261AA	e3		260
NTF3055L175T1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	65 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.175 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e3	30	260
NTF3055L175T3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	65 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.175 ohm	2 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e3		260
STB45NF06T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	152 A	135 mJ	38 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.028 ohm	38 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	245
STB5NK50ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17.6 A	130 mJ	4.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	1.5 ohm	4.4 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3	30	245
MTB30P06VT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	105 A	450 mJ	30 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.08 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
MTD5P06VT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	125 mJ	5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.45 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
MTD6N15T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-65 Cel	TIN	.3 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NID9N05CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.181 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED		e3		260
NTB30N20T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	450 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.081 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
NTB52N10T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	156 A	800 mJ	52 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.03 ohm	52 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB75N03L09G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.008 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
NTD12N10T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	56.6 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	75 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Tin (Sn)	.165 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NTD14N03RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.13 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD18N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.065 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTD20N03L27G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	288 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.031 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
NTD20N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.046 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD23N03RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	22.3 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		3.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.06 ohm	3.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD3055L104G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Tin (Sn)	.104 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	40	260
NTD3055L170G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD3055L170T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD80N02G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0058 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.