YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
NTB18N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTB35N15G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	111 A	700 mJ	37 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.05 ohm	37 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTB4302T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	722 mJ	74 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0093 ohm	74 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB45N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.026 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB45N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.026 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB60N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	454 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.016 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTB60N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	454 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.016 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTB75N03RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74.4 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	71.7 mJ	9.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.013 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB85N03G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0068 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTB85N03T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	85 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0068 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB90N02G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0058 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTB90N02T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0058 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD18N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.06 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD18N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.06 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD20N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	128 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.048 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD24N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	162 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.045 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTD30N02G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	50 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0145 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD32N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	93.75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.028 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTMD2C02R2G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.043 ohm	5.2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTMD2P01R2G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.71 W	PLASTIC/EPOXY	SWITCHING	16 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	9 A	350 mJ	2.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.1 ohm	2.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
NTMSD6N303R2G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.032 ohm	6 A	DUAL	R-PDSO-G8	3		Not Qualified			e3	40	260
NTQD6968NR2G	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.03 ohm	6.2 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
IXTY1R6N50P	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.5 A	75 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	6.5 ohm	1.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
SIHF9640S-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	700 mJ	11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.5 ohm	11 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-263AB		40	260
SQJ962EP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	25 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	5 mJ	8 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.06 ohm	8 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified				40	260
NTD50N03RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	20 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.014 ohm	7.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD50N03RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	20 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.014 ohm	7.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD50N03R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	20 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.014 ohm	7.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD6600NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	72 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.146 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD6600NT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	72 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.146 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD6600N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	72 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.146 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
STB21NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	480 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.19 ohm	18 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
STB21NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	610 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.22 ohm	17 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3
STD100N03LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	500 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0055 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-251AA	e3
STD70N02L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	280 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.008 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3
STD95N04	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0065 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
BSC027N03SG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	89 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	800 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0039 ohm	25 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
NTMFD4C85NT3G	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	300 A	34.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0043 ohm	15.4 A	DUAL	R-PDSO-F8	1					e3	30	260
NTMFD4C87NT3G	Onsemi	N-CHANNEL		YES	3.51 W										26.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN		26.6 A			1					e3	30	260
NTMFS4C01NT1G	Onsemi	N-CHANNEL	SINGLE	YES	3.2 W							1			303 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			MATTE TIN		303 A			1					e3	30	260
NVD6495NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	79 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.054 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	AEC-Q101
NVMFS4C01NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.84 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	862 mJ	319 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.00095 ohm	319 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	AEC-Q101
NVMFS4C01NWFT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.84 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	862 mJ	319 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.00095 ohm	319 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	AEC-Q101
NVMFS4C03NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	549 mJ	143 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0024 ohm	143 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	AEC-Q101
NVMFS4C03NWFT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	77 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	549 mJ	143 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0024 ohm	143 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	AEC-Q101
FQD6N60CTM	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	300 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	2 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	FAST SWITCHING		e3
NTD24N06L-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	162 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.045 ohm	24 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTD95N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		84 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.005 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.