YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
NTD4913NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	132 A	22 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.015 ohm	7.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTMFS4833NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	288 A	612.5 mJ	191 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.003 ohm	16 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
NTMFS4833NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	288 A	612.5 mJ	191 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.003 ohm	16 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
NTMFS4837NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	47.2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	148 A	242 mJ	74 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.0075 ohm	10 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	40	260
BSB017N03LX3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	METAL	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	225 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-40 Cel		.0017 ohm	147 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified					260
BSC091N03MSCG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	176 A	10 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0091 ohm	12 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified
BSC119N03MSCG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	156 A	10 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0119 ohm	11 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified			e3
FQD12P10TM_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37.6 A	370 mJ	9.4 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.29 ohm	9.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260	AEC-Q101
IRF7749L2TR1PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	800 A	260 mJ	375 A	9	CHIP CARRIER	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN SILVER COPPER	.0015 ohm	33 A	BOTTOM	R-XBCC-N9	1	DRAIN	Not Qualified			e1
NCV8440STT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.95 ohm	2.6 A	DUAL	R-PDSO-G3		DRAIN	Not Qualified		TO-261AA	e3
NCV8440STT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.95 ohm	2.6 A	DUAL	R-PDSO-G3		DRAIN	Not Qualified		TO-261AA	e3
NTB6411ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	217 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	285 A	470 mJ	77 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.014 ohm	72 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB6411ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	217 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	285 A	470 mJ	77 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.014 ohm	72 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB6412ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	300 mJ	58 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0182 ohm	58 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB6448ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	76 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTB6448ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	76 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
SQ2319ES-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	1.8 mJ	3.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.082 ohm	3.3 A	DUAL	R-PDSO-G3			Not Qualified		TO-236		40	260
STB76NF75	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	700 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.011 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
STB76NF80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	700 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
STD70NS04ZL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	33 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	650 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0125 ohm	70 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
STL23NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	UNSPECIFIED	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	78 A	700 mJ	19.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.18 ohm	19.5 A	DUAL	S-XDSO-N4	3	DRAIN	Not Qualified			e3	30	260
STL60N32N3LL	STMicroelectronics	N-CHANNEL	SERIES, 2 ELEMENTS	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	48 A		60 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.12 ohm	32 A	DUAL	R-PDSO-N4	3	DRAIN	Not Qualified			e3	30	260
STS15N4LLF5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63.6 A	1090 mJ	15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.0083 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	40	260
STS1DN45K3	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2 A		.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	3.8 ohm	.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	40	260
STB13NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	200 mJ	11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.36 ohm	11 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
STB95N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	150 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.007 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
STD120N4F6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	394 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.004 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD27N3LH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	108 A	50 mJ	27 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.028 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STS12N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.0097 ohm	12 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e4	40	260
STS20N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0075 ohm	20 A	DUAL	R-PDSO-G8			Not Qualified	ULTRA-LOW RESISTANCE
STS5N15F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	300 mJ	5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.057 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
CSD16322Q5C	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	136 A	125 mJ	97 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.007 ohm	97 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
SI4890BDY-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.012 ohm	16 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
SQD50N04-09H-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83.3 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	76 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.009 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STB50N25M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	350 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.065 ohm	28 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
STB70N10F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	120 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.0195 ohm	65 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3	30	245
STD55N4F5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	100 mJ	55 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0085 ohm	55 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252		NOT SPECIFIED	NOT SPECIFIED
STD78N75F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	185 mJ	70 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.011 ohm	70 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252		NOT SPECIFIED	NOT SPECIFIED
STL17N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	68 A		17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0073 ohm	17 A	DUAL	S-XDSO-N8		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED
STL25N15F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	80 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	24 A	125 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.063 ohm	6 A	DUAL	R-PDSO-N5	3	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
STL90N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	96 A		90 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.0073 ohm	24 A	DUAL	R-XDSO-N5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
STS11N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A		11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.019 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
SUD45P03-09-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	61 mJ	45 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0087 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252
DMG4435SSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		7.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.016 ohm	7.3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMG4710SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A		12.7 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0125 ohm	8.8 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG4712SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.55 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63 A		11.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.014 ohm	11.2 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG8880LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.43 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		11.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.01 ohm	11.6 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
IPD60R950C6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	46 mJ	4.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.95 ohm	4.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.