YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMTH3004LFGQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

250 A

110 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0055 ohm

75 A

DUAL

S-PDSO-N8

3

DRAIN

HIGH RELIABILITY

e3

260

240 pF

AEC-Q101; MIL-STD-202

DMTH6016LFDFWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

70 A

11.7 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.018 ohm

9.4 A

DUAL

S-PDSO-N6

DRAIN

e3

260

25.4 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH6016LFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.38 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

160 A

12.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.016 ohm

41 A

DUAL

S-PDSO-F8

1

DRAIN

e3

260

23.4 pF

MIL-STD-202

NVMFS5C670NLWFAFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0088 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

AEC-Q101

DMT68M8LFV-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41.7 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

210 A

39 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0095 ohm

54.1 A

DUAL

S-PDSO-F8

1

DRAIN

e3

260

44 pF

MIL-STD-202

JANSR2N7585U2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

240 mJ

50 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

150 ns

.04 ohm

50 A

DUAL

R-CDSO-N3

DRAIN

HIGH RELIABILITY

MIL-19500; RH - 100K Rad(Si)

DMT6017LFDF-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.76 W

PLASTIC/EPOXY

SWITCHING

65 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

50 A

18 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.018 ohm

8.1 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

29 pF

MIL-STD-202

DMTH6005LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

400 A

171 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0041 ohm

100 A

DUAL

S-PDSO-N8

DRAIN

e3

260

69 pF

MIL-STD-202

DMTH69M8LFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

29.4 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

180 A

45 mJ

45.4 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0095 ohm

15.9 A

DUAL

S-PDSO-F5

1

DRAIN

e3

260

41 pF

DMN2041UVT-13

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.44 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

36 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.028 ohm

5.8 A

DUAL

R-PDSO-G6

e3

260

79 pF

MIL-STD-202

DMN22M5UFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

500 A

175 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0025 ohm

27 A

DUAL

S-PDSO-N5

DRAIN

e3

260

538 pF

DMP2110UVTQ-13

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.01 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

15 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.15 ohm

1.8 A

DUAL

R-PDSO-G6

e3

260

47 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT10H072LFDFQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

22 A

1.8 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.062 ohm

4 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

2.5 pF

AEC-Q101; IATF 16949; MIL-STD-202

IPB65R190CFDATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

57.2 A

484 mJ

17.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.19 ohm

17.5 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

NVD6828NLT4G-VF01

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

90 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

206 A

90 mJ

41 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

41 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

APT1003RSFLLG/TR

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

425 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

3 ohm

4 A

SINGLE

R-PSSO-G2

DRAIN

MKE38P600LB-TUB

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1950 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.045 ohm

50 A

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

UL RECOGNIZED

NVMFS6H801NWFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

166 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

960 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0028 ohm

157 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

22 pF

AEC-Q101

IXTA02N250HVTRL

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

2500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

.2 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

450 ohm

.2 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

10

260

3 pF

NTBGS3D5N06C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

491 A

176 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0037 ohm

127 A

SINGLE

R-PSSO-G6

DRAIN

TO-263CB

21 pF

NVMFS4C308NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

144 A

42 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

17.2 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

39 pF

AEC-Q101

MCAC60N15YA-TP

Micro Commercial Components

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

150 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.019 ohm

60 A

DUAL

R-PDSO-F8

1

DRAIN

10

260

5 pF

NVTYS005N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

76 W

PLASTIC/EPOXY

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

430 A

155 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0073 ohm

18 A

DUAL

R-PDSO-X8

1

DRAIN

e3

30

260

11 pF

AEC-Q101

NVMFWS003P03P8ZT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

168.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

186 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0018 ohm

234 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

4100 pF

AEC-Q101

NVTFS015P03P8ZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88.2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

353 A

88 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0075 ohm

17 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

875 pF

AEC-Q101

NTBL070N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

312 W

PLASTIC/EPOXY

SWITCHING

650 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

110 A

214 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.07 ohm

44 A

SINGLE

R-PSSO-F8

1

DRAIN

e3

30

260

14.6 pF

NTMT185N60S5H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

53 A

124 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.185 ohm

15 A

DUAL

S-PDSO-N8

1

DRAIN

e3

30

260

NTTFS012N10MD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

217 A

121 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0144 ohm

45 A

DUAL

S-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

8.4 pF

NVTYS002N03CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

30 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

675 A

320 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

3.2 W

175 Cel

SILICON

-55 Cel

MATTE TIN

.0031 ohm

29 A

DUAL

R-PDSO-X8

1

DRAIN

e3

30

260

43 pF

AEC-Q101

PCFA86210F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

500 W

UNSPECIFIED

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

502 mJ

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0063 ohm

169 A

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

16 pF

AEC-Q101

PCFA86361F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

429 W

UNSPECIFIED

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

819 mJ

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0014 ohm

371 A

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

139 pF

AEC-Q101

PCFA86561F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

429 W

UNSPECIFIED

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1167 mJ

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0011 ohm

441 A

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

255 pF

AEC-Q101

NTC020N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

535 W

UNSPECIFIED

SWITCHING

1200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

412 A

264 mJ

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.028 ohm

103 A

UPPER

R-XUUC-N4

NOT SPECIFIED

NOT SPECIFIED

22 pF

NTC040N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

348 W

UNSPECIFIED

SWITCHING

1200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

240 A

613 mJ

4

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.056 ohm

60 A

UPPER

R-XUUC-N4

NOT SPECIFIED

NOT SPECIFIED

12 pF

NTC080N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

178 W

UNSPECIFIED

SWITCHING

1200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

132 A

171 mJ

3

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.11 ohm

31 A

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

6.5 pF

NTLJS14D0P03P8ZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

165 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

52 ns

-55 Cel

254 ns

MATTE TIN

.0135 ohm

11 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

690 pF

NVMFS5831NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

143 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

683 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0048 ohm

26 A

DUAL

R-PDSO-F6

DRAIN

389 pF

AEC-Q101

NVMFWS0D7N04XMT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

987 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0007 ohm

331 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

112 pF

AEC-Q101

NVMYS2D3N06CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134.4 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

622 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0023 ohm

171 A

SINGLE

R-PSSO-G4

DRAIN

24 pF

AEC-Q101

NVTFS012P03P8ZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

47 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.02 ohm

7 A

DUAL

S-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

506 pF

AEC-Q101

NVTFWS012P03P8ZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

47 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.02 ohm

7 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

506 pF

AEC-Q101

SH32N65DM6AG

STMicroelectronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

208 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

120 A

778 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.097 ohm

32 A

DUAL

R-PDSO-G9

3

e3

30

245

.3 pF

AEC-Q101

NVMFS4C05NT3G

Onsemi

N-CHANNEL

SINGLE

YES

79 W

1

116 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

116 A

1

e3

30

260

NVMFS4C05NWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

79 W

1

116 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

116 A

1

e3

30

260

IPD65R1K4CFDATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28.4 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.2 A

26 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.4 ohm

2.8 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

BSP129H6906XTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

1.4 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

6 ohm

.35 A

DUAL

R-PDSO-G4

1

DRAIN

e3

AEC-Q101

BSP135L6433HTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.48 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

45 ohm

.12 A

DUAL

R-PDSO-G4

DRAIN

AEC-Q101

BSP149H6906XTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

2.6 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.8 ohm

.66 A

DUAL

R-PDSO-G4

1

DRAIN

e3

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.