YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
STD7N52DK3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY	SWITCHING	525 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	100 mJ	6.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.15 ohm	6 A	SINGLE	R-PSSO-G2	1		Not Qualified	ULTRA-LOW RESISTANCE	TO-252	e3	30	260
STL80N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	84 A		80 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0076 ohm	21 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
SQS401EN-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED		40 V	C BEND	SQUARE	ENHANCEMENT MODE	1	30 A	9.8 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.029 ohm	12 A	DUAL	S-XDSO-C5		DRAIN	Not Qualified				40	240
NTGD4161PT1G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.16 ohm	1.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	40	260
NTD4809NHT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	112.5 mJ	58 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0125 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IPB06CN10NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	480 mJ	100 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0062 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IPB080N06NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	448 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0077 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3		245
BUZ31H3045A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	95 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	200 mJ	14.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.2 ohm	14.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB			245
STB190NF04T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	860 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0043 ohm	120 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
NTD4960NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	137 A	51.2 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0127 ohm	8.9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTD4963NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	132 A	33.8 mJ	44 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.016 ohm	8.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
STD11NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	200 mJ	10 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.45 ohm	10 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
STD65NF06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	390 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.014 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
FDD8580	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	49.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	153 A	66 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.009 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
NTLJF3118NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	20 V	C BEND	SQUARE	ENHANCEMENT MODE	1	18 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.065 ohm	2.6 A	DUAL	S-XDSO-C6	1		Not Qualified			e3
STS17NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	150 mJ	17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.0075 ohm	17 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4
BSB012NE2LX	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57 W	METAL	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	285 mJ	170 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0012 ohm	39 A	BOTTOM	R-MBCC-N2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
IRLH5030TR2PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	230 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0099 ohm	13 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
IRF7901D1TRPBF	International Rectifier	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A			8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.038 ohm	6.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7220-TRPBF	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		14 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	110 mJ	11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.012 ohm	14 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDB3652-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		182 mJ	61 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.016 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
HUFA76429D3ST-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.029 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
FDD3672-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	144 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		73 mJ	44 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.028 ohm	44 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FQD2N60CTM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.6 A	120 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	4.7 ohm	1.9 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3	30	260
FDS4559-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.055 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified				30	260
FDS8958A-F085	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	54 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.028 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified				30	260
FDD8896-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.08 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		168 mJ	94 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0068 ohm		SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDB045AN08A0-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		600 mJ	19 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0045 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDD8445-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		144 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	79 W	175 Cel	SILICON	138 ns	-55 Cel	53 ns	MATTE TIN	.0087 ohm		SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260	270 pF	AEC-Q101
HUF76639S3ST-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	180 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.026 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN		ULTRA LOW RESISTANCE	TO-263AB	e3	30	245
FDB42AN15A0-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		78 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.042 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
FDMS9408-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		143 mJ	80 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	51 ns	-55 Cel	79 ns	MATTE TIN	.0018 ohm	80 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDD10AN06A0-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	135 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		429 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0105 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
FQB34P10TM-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	155 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	134 A	2200 mJ	33.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	33.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQD4P25TM-WS	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	280 mJ	3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2.1 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
FQD3N60CTM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	150 mJ	2.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.4 ohm	2.4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FDD120AN15A0-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		122 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.12 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
FDD2572-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	135 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		36 mJ	29 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.054 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDD3682-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	95 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		55 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.036 ohm	5.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDB8832-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1246 mJ	34 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.0022 ohm	34 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDD4685-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260	205 pF	AEC-Q101
DMN2040UVT-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.024 ohm	6.7 A	DUAL	R-PDSO-G6	1					e3		260	83 pF	MIL-STD-202
DMP2075UVT-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.075 ohm	3.8 A	DUAL	R-PDSO-G6	1					e3		260	87 pF	MIL-STD-202
DMT2004UFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	24 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	36 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	70 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	559 pF	MIL-STD-202
DMT3009LFVWQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35.7 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	19 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.011 ohm	12 A	DUAL	S-PDSO-F8	1	DRAIN		HIGH RELIABILITY		e3		260	52 pF	AEC-Q101; MIL-STD-202
DMT6005LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	400 A	171 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	100 A	DUAL	S-PDSO-N8		DRAIN				e3		260	69 pF	MIL-STD-202
DMT615MLFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	34.72 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	18.05 mJ	38 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	38 A	DUAL	R-PDSO-F5	1	DRAIN		ESD PROTECTED		e3		260
DMTH3004LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	250 A	110 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0055 ohm	15 A	DUAL	S-PDSO-N8	3	DRAIN				e3		260	240 pF	MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.