Onsemi Power Field Effect Transistors (FET) 1,070

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTR4503NT3

Onsemi

N-CHANNEL

SINGLE

YES

.73 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

2 A

1

e0

235

2SK3816-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

40 A

1

e6

2SK3820-DL-E

Onsemi

N-CHANNEL

SINGLE

NO

50 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

104 A

84.5 mJ

26 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.65 W

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.08 ohm

26 A

SINGLE

R-PSIP-T3

1

e6

110 pF

2SK4066-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

100 A

1

e6

2SK4065-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

100 A

1

e6

2SK3817-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

60 A

1

e6

ECH8659-M-TL-H

Onsemi

N-CHANNEL

YES

1.5 W

ENHANCEMENT MODE

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

7 A

1

e6

CPH6444-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

4.5 A

1

e6

FW811-TL-E

Onsemi

N-CHANNEL

YES

2.2 W

ENHANCEMENT MODE

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

8 A

1

e6

2SK4099LS-1E

Onsemi

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

8.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.5 A

e3

EFC6602R-A-TR

Onsemi

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

1

30

260

NVMFD5853NT1G

Onsemi

N-CHANNEL

YES

58 W

ENHANCEMENT MODE

53 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

53 A

1

e3

30

260

NVMFD5853NWFT1G

Onsemi

N-CHANNEL

YES

58 W

ENHANCEMENT MODE

53 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

53 A

1

e3

30

260

NTTFS4965NFTWG

Onsemi

N-CHANNEL

SINGLE

YES

22.73 W

ENHANCEMENT MODE

1

64 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

64 A

1

e3

NTMFS4965NFT3G

Onsemi

N-CHANNEL

SINGLE

YES

22.73 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

65 A

1

e3

30

260

NTLLD4951NFTWG

Onsemi

N-CHANNEL

YES

3.2 W

ENHANCEMENT MODE

13 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

13 A

1

e3

30

260

BMS4007-1E

Onsemi

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

60 A

e3

SFT1431-W

Onsemi

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

11 A

e6

NTMFS4C09NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

25.5 W

ENHANCEMENT MODE

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

SFT1443-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

19 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

9 A

1

e6

30

260

NTMKB4895NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

120 A

80 mJ

2

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

.006 ohm

15 A

BOTTOM

R-XBCC-N2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NTMKE4891NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

210 A

184 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

.0026 ohm

26.7 A

BOTTOM

R-XBCC-N3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NTMD5838NLR2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

35 A

20 mJ

8.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0308 ohm

7.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTMFS5832NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

443 A

134 mJ

111 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0065 ohm

20 A

DUAL

R-PDSO-F5

1

Not Qualified

e3

30

260

NVMFD5877NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

74 A

10.5 mJ

17 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

6 A

DUAL

R-PDSO-F6

1

DRAIN

Not Qualified

e3

30

260

NVMFD5877NLT3G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

74 A

10.5 mJ

17 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

6 A

DUAL

R-PDSO-F6

1

DRAIN

Not Qualified

e3

30

260

NDD02N60Z-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

57 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

120 mJ

2.2 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

4.8 ohm

2.2 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

30

260

NDF06N60ZH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

113 mJ

7.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.2 ohm

7.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NTP5863NG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

383 A

157 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0078 ohm

97 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NTP5864NG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

252 A

80 mJ

63 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0124 ohm

63 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NTD2955PT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

216 mJ

12 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.18 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

NTD4959NH-35G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

112.5 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0125 ohm

9 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

NTD4959NHT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

130 A

112.5 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0125 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTBV5605T4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

338 mJ

18.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.14 ohm

18.5 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

NTDV18N06LT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

54 A

72 mJ

18 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

55 W

175 Cel

SILICON

180 ns

-55 Cel

120 ns

Tin (Sn)

.065 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

80 pF

AEC-Q101

NTDV20P06LT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

304 mJ

15.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

200 ns

-55 Cel

185 ns

MATTE TIN

.15 ohm

15.5 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

120 pF

AEC-Q101

NTMFS4933NT1G

Onsemi

210 A

FET General Purpose Power

MATTE TIN

1

e3

30

260

NTMFD4901NFT1G

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3.45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

60 A

28.8 mJ

23.4 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

13.5 A

DUAL

R-PDSO-F8

1

DRAIN SOURCE

e3

30

260

NTMFD4902NFT1G

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3.45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

60 A

28.8 mJ

23 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

13.5 A

DUAL

R-PDSO-F8

1

DRAIN SOURCE

e3

30

260

NTMFS5830NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

690 A

361 mJ

172 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0036 ohm

28 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVD5117PLT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

118 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

419 A

240 mJ

61 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.022 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5832NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

523 A

120 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0072 ohm

120 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5832NLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

523 A

120 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0072 ohm

120 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVTFS4824NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

402 A

72 mJ

46 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0075 ohm

46 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVTFS4824NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

402 A

72 mJ

46 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0075 ohm

46 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4946NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

205 mJ

100 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0051 ohm

12.7 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

289 pF

NTDV3055L104-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

12 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.104 ohm

12 A

SINGLE

R-PSIP-T3

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NTDV3055L104T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.104 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.