Onsemi Power Field Effect Transistors (FET) 1,070

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NVD5890NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	320 mJ	123 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0055 ohm	123 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NTMFS4955NT1G	Onsemi														48 A			FET General Purpose Power								MATTE TIN					1				e3	30	260
NTMFS4955NT3G	Onsemi														48 A			FET General Purpose Power								MATTE TIN					1				e3	30	260
NVD4856NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	179 A	180.5 mJ	89 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0068 ohm	13.3 A	SINGLE	R-PSSO-G2	1	DRAIN			e3				AEC-Q101
NTMFS4931NT1G	Onsemi														246 A			FET General Purpose Power								MATTE TIN					1				e3	30	260
NTMFS4931NT3G	Onsemi														246 A			FET General Purpose Power								MATTE TIN					1				e3	30	260
NTMFS4C13NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	21.6 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	106 A	22 mJ	38 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0091 ohm	7.2 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260	127 pF
NVB5404NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	254 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	670 A	1000 mJ	167 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0045 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NVB5860NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	283 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	660 A	735 mJ	220 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0036 ohm	130 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NVB60N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	454 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.014 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NVD3055L170T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NTMFS4935NCT1G	Onsemi														93 A			FET General Purpose Power								TIN					1				e3	30	260
NTMFS4935NCT3G	Onsemi														93 A			FET General Purpose Power								TIN					1				e3	30	260
NDD01N60-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	13 mJ	1.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	8.5 ohm	1.5 A	SINGLE	R-PSIP-T3	3	DRAIN			e3
NDD01N60T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	13 mJ	1.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	8.5 ohm	1.5 A	SINGLE	R-PSSO-G2	3	DRAIN			e3
NDD02N40-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.9 A	120 mJ	1.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0055 ohm	1.7 A	SINGLE	R-PSIP-T3	3	DRAIN			e3	30	260
NDD02N40T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.9 A	120 mJ	1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0055 ohm	1.7 A	SINGLE	R-PSSO-G2	3	DRAIN			e3	30	260
NDT01N60T1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A	13 mJ	.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	8.5 ohm	.4 A	DUAL	R-PDSO-G4	1	DRAIN		TO-261AA	e3	30	260
NVMD6N03R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	325 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin (Sn)	.032 ohm	6 A	DUAL	R-PDSO-G8	1		ULTRA LOW ON RESISTANCE		e3	30	260		AEC-Q101
NVMFD5873NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	190 A	40 mJ	58 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.013 ohm	10 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260		AEC-Q101
NVD3055-150T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	MATTE TIN	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260	40 pF	AEC-Q101
NTDV5804NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	125 A	195 mJ	69 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0075 ohm	69 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NVD4805NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	288 mJ	95 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0074 ohm	12.7 A	SINGLE	R-PSSO-G2	1	DRAIN			e3				AEC-Q101
NDD60N360U1-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	114 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	64 mJ	11 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.36 ohm	11 A	SINGLE	R-PSIP-T3	3	DRAIN			e3	30	260
NDD60N360U1T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	114 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	64 mJ	11 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.36 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260
NTMFD4C20NT1G	Onsemi	N-CHANNEL		YES	4.6 W										27.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		27.4 A			1				e3	30	260
NDT02N40T1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.6 A	120 mJ	.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0055 ohm	.4 A	DUAL	R-PDSO-G4	1	DRAIN		TO-261AA	e3	30	260
NTBV75N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0095 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NVD3055-094T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.094 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260		AEC-Q101
NVMFD5852NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	27 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	329 A	80 mJ	44 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.012 ohm	15 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260		AEC-Q101
NVMFD5853NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	24 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	165 A	40 mJ	34 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.015 ohm	12 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260		AEC-Q101
NVMFD5873NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	190 A	40 mJ	58 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.013 ohm	10 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260		AEC-Q101
NVMFD5877NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260		AEC-Q101
NVMFD5877NLWFT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260		AEC-Q101
NVF2955PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	225 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Tin (Sn)	.185 ohm	1.7 A	DUAL	R-PDSO-G4	1	DRAIN		TO-261AA	e3	30	260		AEC-Q101
BFL4007-1E	Onsemi	N-CHANNEL	SINGLE	NO	40 W							1			8.7 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		8.7 A							e3
2SK3820-DL-1E	Onsemi	N-CHANNEL	SINGLE	YES	50 W							1			26 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		26 A			1				e3
BFL4036-1E	Onsemi	N-CHANNEL	SINGLE	NO	37 W							1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		14 A							e3
BFL4037-1E	Onsemi	N-CHANNEL	SINGLE	NO	40 W							1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		11 A							e3
NVMFS4841NWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	112 W							1			89 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		89 A			1				e3	30	260
NVMFS5826NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	39 W							1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		26 A			1				e3	30	260
NVMFS5826NLWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	39 W							1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		26 A			1				e3	30	260
NVMFS5830NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	158 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1012 A	361 mJ	185 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0036 ohm	185 A	DUAL	R-PDSO-F5	1	DRAIN			e3	30	260		AEC-Q101
NVMFS5830NLWFT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	158 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1012 A	361 mJ	185 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0036 ohm	185 A	DUAL	R-PDSO-F5	1	DRAIN			e3	30	260		AEC-Q101
NVMFS5832NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	127 W							1			120 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Matte Tin (Sn) - annealed		120 A			1				e3	30	260
NVMFS5834NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	276 A	48 mJ	75 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0136 ohm	14 A	DUAL	R-PDSO-F5	1	DRAIN			e3	30	260		AEC-Q101
NVMFS5834NLWFT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	276 A	48 mJ	75 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.0136 ohm	14 A	DUAL	R-PDSO-F5	1	DRAIN			e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
NVMFS5844NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	107 W							1			61 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		61 A			1				e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.