Onsemi Power Field Effect Transistors (FET) 1,070

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NXH010P120MNF1PTNG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

342 A

18

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.014 ohm

114 A

UPPER

R-XUFM-X18

ISOLATED

39 pF

NXH010P120MNF1PNG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

342 A

18

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.014 ohm

114 A

UPPER

R-XUFM-X18

ISOLATED

39 pF

NXH006P120MNF2PTG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

950 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

912 A

36

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0072 ohm

304 A

UPPER

R-XUFM-X36

ISOLATED

49 pF

NVHL110N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

380 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.11 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

NVH4L020N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

484 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

504 A

264 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

.028 ohm

116 A

SINGLE

R-PSFM-T4

TO-247

e3

24 pF

AEC-Q101

NXH020U90MNF2PTG

Onsemi

N-CHANNEL

COMPLEX

NO

352 W

UNSPECIFIED

SWITCHING

900 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

447 A

20

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.014 ohm

149 A

UPPER

R-XUFM-X20

ISOLATED

44 pF

NXH040F120MNF1PTG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

74 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

90 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.056 ohm

30 A

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

12 pF

NXH020F120MNF1PG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

119 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

153 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.03 ohm

51 A

UPPER

R-XUFM-X22

ISOLATED

19 pF

NXH020F120MNF1PTG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

119 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

153 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.03 ohm

51 A

UPPER

R-XUFM-X22

ISOLATED

19 pF

NXH040F120MNF1PG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

74 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

90 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.056 ohm

30 A

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

12 pF

NXH010P120MNF1PTG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

342 A

18

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.014 ohm

114 A

UPPER

R-XUFM-X18

ISOLATED

39 pF

NXH010P120MNF1PG

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

250 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

342 A

18

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.014 ohm

114 A

UPPER

R-XUFM-X18

ISOLATED

39 pF

FQP50N06L-EPKE0003

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

121 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

990 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

820 ns

-55 Cel

470 ns

.025 ohm

52.4 A

SINGLE

R-PSFM-T3

TO-220AB

120 pF

FCPF11N65

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

285 ns

-55 Cel

370 ns

Matte Tin (Sn) - annealed

.38 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

63 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.