| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
984 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0026 ohm |
110 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
245 |
AEC-Q101 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33.7 mJ |
90 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
47 ns |
-55 Cel |
70 ns |
Matte Tin (Sn) - annealed |
.0044 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48.4 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 mJ |
25 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
17 ns |
-55 Cel |
36 ns |
MATTE TIN |
.0115 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
28 pF |
AEC-Q101 |
||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
47.5 A |
87 mJ |
19 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.165 ohm |
19 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
335 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0105 ohm |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
335 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0105 ohm |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
335 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0105 ohm |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
10 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
335 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0105 ohm |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
33 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
76 mJ |
14 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.19 ohm |
14 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
176 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
217 mJ |
110 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
90 ns |
-55 Cel |
145 ns |
MATTE TIN |
.0022 ohm |
110 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
83 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
265 mJ |
130 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0037 ohm |
130 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
37 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
706 mJ |
330 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0012 ohm |
330 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
116 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
28 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
130 A |
43 mJ |
25 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0315 ohm |
25 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
DEPLETION MODE |
2 |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
BOTTOM |
R-PBCC-N6 |
SOURCE |
|||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
170 mJ |
20 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
60 W |
175 Cel |
SILICON |
140 ns |
-55 Cel |
140 ns |
Matte Tin (Sn) - annealed |
.046 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
120 pF |
AEC-Q101 |
||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
57 mJ |
12 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.25 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
521 A |
265 mJ |
87 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
35 ns |
-55 Cel |
68 ns |
.0026 ohm |
87 A |
DUAL |
R-PDSO-N8 |
SOURCE |
NOT SPECIFIED |
NOT SPECIFIED |
70 pF |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
50 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
98 mJ |
45 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0157 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
200 pF |
AEC-Q101 |
|||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
50 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
130 A |
181 mJ |
5.5 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
34 ns |
-55 Cel |
115 ns |
Matte Tin (Sn) - annealed |
.037 ohm |
5.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
MO-240BA |
e3 |
30 |
260 |
||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
50 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
396 A |
107 mJ |
78 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0072 ohm |
78 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
22 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
211 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
23 ns |
-55 Cel |
780 ns |
MATTE TIN |
.0085 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240 |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
27 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
25 A |
40 mJ |
10 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.36 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
57 mJ |
12 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.25 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
28 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22.2 A |
135 mJ |
7.4 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
60 ns |
-55 Cel |
116 ns |
MATTE TIN |
.6 ohm |
7.4 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
45 pF |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
512 A |
486 mJ |
128 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
2.4 W |
175 Cel |
SILICON |
126 ns |
-55 Cel |
90 ns |
Matte Tin (Sn) - annealed |
.0045 ohm |
91 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
35 pF |
||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
304 A |
181 mJ |
76 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
2.4 W |
175 Cel |
SILICON |
42 ns |
-55 Cel |
38 ns |
Matte Tin (Sn) - annealed |
.0085 ohm |
76 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
25 pF |
|||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
107 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
84 mJ |
65 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
22 ns |
-55 Cel |
405 ns |
Matte Tin (Sn) - annealed |
.0153 ohm |
65 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
40 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
335 A |
54 mJ |
75 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
54 ns |
-55 Cel |
781 ns |
Matte Tin (Sn) - annealed |
.0049 ohm |
75 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
MO-240BA |
e3 |
30 |
260 |
1455 pF |
|||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
227 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
259 mJ |
100 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
21 ns |
-55 Cel |
710 ns |
MATTE TIN |
.0072 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
23 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
98 A |
48 mJ |
29 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.025 ohm |
10.5 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
9 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
90 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
57 mJ |
12 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.26 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
83 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
25 A |
40 mJ |
10 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.36 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
446 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
162.5 A |
1009 mJ |
65 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.04 ohm |
65 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
50 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
352 A |
1667 mJ |
71 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0053 ohm |
71 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
22 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
37 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
226 A |
70 mJ |
49 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0081 ohm |
49 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
15 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
200 A |
96 mJ |
50 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
26 ns |
-55 Cel |
54 ns |
Matte Tin (Sn) - annealed |
.0109 ohm |
50 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
MO-240BA |
e3 |
30 |
260 |
30 pF |
|||||||||||||||
|
|
Onsemi |
N-CHANNEL |
COMPLEX |
NO |
250 W |
UNSPECIFIED |
POWER CONTROL |
650 V |
PRESS FIT |
RECTANGULAR |
5 |
156 A |
36 A |
24 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
.09 ohm |
36 A |
UPPER |
R-XUFM-X24 |
ISOLATED |
LOW CONDUCTION LOSS |
UL APPROVED |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
203 A |
36 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.019 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
104 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
505 A |
390 mJ |
269 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0014 ohm |
43 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
68 W |
PLASTIC/EPOXY |
80 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
175 A |
205 mJ |
9.5 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0231 ohm |
9.5 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
5.4 pF |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
595 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
187.5 A |
2025 mJ |
75 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.025 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
244 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
4454 mJ |
553.8 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.00064 ohm |
553.8 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
390 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
42 W |
PLASTIC/EPOXY |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
137 A |
151 mJ |
29 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0207 ohm |
29 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
4.7 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
AMPLIFIER |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
281 A |
90 mJ |
60.8 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0125 ohm |
60.8 A |
DUAL |
R-PDSO-F6 |
1 |
DRAIN |
MO-240AA |
30 |
260 |
AEC-Q101 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.