Onsemi Power Field Effect Transistors (FET) 1,070

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDB9503L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

984 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0026 ohm

110 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

FDD9409L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33.7 mJ

90 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

47 ns

-55 Cel

70 ns

Matte Tin (Sn) - annealed

.0044 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD9411L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48.4 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 mJ

25 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

17 ns

-55 Cel

36 ns

MATTE TIN

.0115 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

28 pF

AEC-Q101

FCPF165N65S3L1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

47.5 A

87 mJ

19 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.165 ohm

19 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NVMFS5A140PLZT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

560 A

420 mJ

140 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

3.8 W

175 Cel

SILICON

-55 Cel

MATTE TIN

7.2 ohm

140 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5A140PLZT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

560 A

420 mJ

140 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

3.8 W

175 Cel

SILICON

-55 Cel

MATTE TIN

7.2 ohm

140 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5A140PLZWFT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

560 A

420 mJ

140 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

3.8 W

175 Cel

SILICON

-55 Cel

MATTE TIN

7.2 ohm

140 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5A140PLZWFT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

560 A

420 mJ

140 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

3.8 W

175 Cel

SILICON

-55 Cel

MATTE TIN

7.2 ohm

140 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5A160PLZT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

335 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0105 ohm

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5A160PLZT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

335 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0105 ohm

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5A160PLZWFT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

335 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0105 ohm

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

AEC-Q101

NVMFS5A160PLZWFT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

335 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0105 ohm

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

FCPF190N65S3L1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

76 mJ

14 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.19 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FDB9406L-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

176 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

217 mJ

110 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

90 ns

-55 Cel

145 ns

MATTE TIN

.0022 ohm

110 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

260

AEC-Q101

NVMFS5C442NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

265 mJ

130 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0037 ohm

130 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

37 pF

AEC-Q101

NVMFS5C410NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

706 mJ

330 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0012 ohm

330 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

116 pF

AEC-Q101

NVMFS5C682NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

43 mJ

25 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0315 ohm

25 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

EFC3J018NUZTDG

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

DEPLETION MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

BOTTOM

R-PBCC-N6

SOURCE

NTDV20N06T4G-VF01

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

170 mJ

20 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

60 W

175 Cel

SILICON

140 ns

-55 Cel

140 ns

Matte Tin (Sn) - annealed

.046 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

120 pF

AEC-Q101

FCPF250N65S3L1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

57 mJ

12 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.25 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FDMD8440L

Onsemi

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

521 A

265 mJ

87 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

68 ns

.0026 ohm

87 A

DUAL

R-PDSO-N8

SOURCE

NOT SPECIFIED

NOT SPECIFIED

70 pF

NVD4810NT4G-VF01

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

98 mJ

45 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0157 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

200 pF

AEC-Q101

FDMC035N10X1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

130 A

181 mJ

5.5 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

34 ns

-55 Cel

115 ns

Matte Tin (Sn) - annealed

.037 ohm

5.5 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e3

30

260

NVMFS5C460NLWFAFT3G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

FDWS9508L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

214 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

211 mJ

80 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

23 ns

-55 Cel

780 ns

MATTE TIN

.0085 ohm

80 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240

e3

30

260

AEC-Q101

FCPF360N65S3R0L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

40 mJ

10 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.36 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FCPF250N65S3R0L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

57 mJ

12 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.25 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FCPF600N60ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22.2 A

135 mJ

7.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

116 ns

MATTE TIN

.6 ohm

7.4 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

45 pF

FDP4D5N10C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

512 A

486 mJ

128 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

2.4 W

175 Cel

SILICON

126 ns

-55 Cel

90 ns

Matte Tin (Sn) - annealed

.0045 ohm

91 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

35 pF

FDPF8D5N10C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

304 A

181 mJ

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

2.4 W

175 Cel

SILICON

42 ns

-55 Cel

38 ns

Matte Tin (Sn) - annealed

.0085 ohm

76 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

25 pF

FDWS9509L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

84 mJ

65 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

22 ns

-55 Cel

405 ns

Matte Tin (Sn) - annealed

.0153 ohm

65 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

AEC-Q101

FDMC4D9P20X8

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

335 A

54 mJ

75 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

54 ns

-55 Cel

781 ns

Matte Tin (Sn) - annealed

.0049 ohm

75 A

DUAL

S-PDSO-N8

1

DRAIN

MO-240BA

e3

30

260

1455 pF

FDD9507L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

227 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

259 mJ

100 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

21 ns

-55 Cel

710 ns

MATTE TIN

.0072 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

NVMFD5C478NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

98 A

48 mJ

29 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.025 ohm

10.5 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

9 pF

AEC-Q101

FCP260N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

57 mJ

12 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.26 ohm

12 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FCP360N65S3R0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

40 mJ

10 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.36 ohm

10 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTHL040N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5C460NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

352 A

1667 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0053 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

NVMFS5C466NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

226 A

70 mJ

49 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0081 ohm

49 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

AEC-Q101

FDMC010N08LC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

200 A

96 mJ

50 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

26 ns

-55 Cel

54 ns

Matte Tin (Sn) - annealed

.0109 ohm

50 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240BA

e3

30

260

30 pF

FPF1C2P5BF07A

Onsemi

N-CHANNEL

COMPLEX

NO

250 W

UNSPECIFIED

POWER CONTROL

650 V

PRESS FIT

RECTANGULAR

5

156 A

36 A

24

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.09 ohm

36 A

UPPER

R-XUFM-X24

ISOLATED

LOW CONDUCTION LOSS

UL APPROVED

SVD5865NLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

203 A

36 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.019 ohm

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NTMFS4H013NFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

505 A

390 mJ

269 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0014 ohm

43 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NTTFS6H854NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

175 A

205 mJ

9.5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0231 ohm

9.5 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

5.4 pF

NVHL025N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

187.5 A

2025 mJ

75 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.025 ohm

75 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NVMTS0D4N04CLTXG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

244 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

4454 mJ

553.8 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.00064 ohm

553.8 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

390 pF

AEC-Q101

NVMFS6H858NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

137 A

151 mJ

29 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0207 ohm

29 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

4.7 pF

AEC-Q101

FDWS9520L-F085

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

281 A

90 mJ

60.8 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0125 ohm

60.8 A

DUAL

R-PDSO-F6

1

DRAIN

MO-240AA

30

260

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.