Onsemi Power Field Effect Transistors (FET) 1,070

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTMFS5C406NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

439 mJ

353 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0008 ohm

353 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

150 pF

NTMFS5C670NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.007 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

8.5 pF

NTTFS5CS70NLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

16 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.0091 ohm

16 A

DUAL

R-PDSO-F8

e3

NOT SPECIFIED

NOT SPECIFIED

15 pF

NVBLS0D7N06C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

314 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

800 mJ

470 A

2

SMALL OUTLINE

METAL SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.00075 ohm

470 A

SINGLE

R-PSSO-F2

1

DRAIN

MO-299A

e3

30

260

92 pF

AEC-Q101

NVHL060N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

162 mJ

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

106 ns

-55 Cel

94 ns

Matte Tin (Sn) - annealed

.084 ohm

46 A

SINGLE

R-PSFM-T3

1

TO-247

e3

30

260

11 pF

AEC-Q101

NVTFWS016N06CTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

160 A

22 mJ

32 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0163 ohm

32 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

5.7 pF

AEC-Q101

NVTYS003N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

740 A

215 mJ

107 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0031 ohm

107 A

DUAL

R-PDSO-X5

1

DRAIN

e3

30

260

42 pF

AEC-Q101

NVTYS004N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

520 A

202 mJ

20 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.004 ohm

20 A

DUAL

R-PDSO-X5

1

DRAIN

e3

30

260

21 pF

AEC-Q101

NVTYS005N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

321 A

104 mJ

19 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0048 ohm

19 A

DUAL

R-PDSO-X5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

NVTYS006N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

114 W

PLASTIC/EPOXY

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

440 A

142 mJ

18 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.005 ohm

18 A

DUAL

R-PDSO-X5

1

DRAIN

e3

30

260

16 pF

AEC-Q101

FDWS9511L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68.2 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

298 A

25 mJ

30 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0205 ohm

30 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

AEC-Q101

FDP2D9N12C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.005 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

FDWS9510L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

32 mJ

50 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

20 ns

-55 Cel

222 ns

MATTE TIN

.0135 ohm

50 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

AEC-Q101

FDU5N60NZTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

216 mJ

4 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

90 ns

-55 Cel

130 ns

Matte Tin (Sn) - annealed

2 ohm

4 A

SINGLE

R-PSIP-T3

TO-251AA

e3

7.5 pF

FDD9510L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35.3 mJ

50 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

44 ns

-55 Cel

220 ns

MATTE TIN

.022 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDMD8430

Onsemi

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

29 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

562 A

96 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.1 W

150 Cel

SILICON

36 ns

-55 Cel

150 ns

.00212 ohm

28 A

DUAL

R-PDSO-N8

SOURCE

160 pF

NTTFS5C478NLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

104 A

43 mJ

26 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.025 ohm

10 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

8 pF

FDD9511L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48.4 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 mJ

25 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

45 ns

-55 Cel

235 ns

MATTE TIN

.021 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FCH165N65S3R0-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

154 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

47.5 A

87 mJ

19 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.165 ohm

19 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FCH125N65S3R0-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

181 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

115 mJ

24 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.125 ohm

24 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDD9509L-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

82 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0075 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

NXH40B120MNQ1SNG

Onsemi

N-CHANNEL

COMPLEX

NO

156 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

3

132 A

44 A

32

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

44 A

UPPER

R-XUFM-X32

ISOLATED

19 pF

NXH40B120MNQ0SNG

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

118 W

UNSPECIFIED

SWITCHING

1200 V

PIN/PEG

RECTANGULAR

DEPLETION MODE

2

114 A

38 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

Matte Tin (Sn) - annealed

.055 ohm

38 A

UPPER

R-XUFM-P22

ISOLATED

e3

19 pF

NXH80B120MNQ0SNG

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

NO

69 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

69 A

23 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

Matte Tin (Sn) - annealed

.11 ohm

23 A

UPPER

R-XUFM-X22

ISOLATED

e3

NXH027B120MNF2PTG

Onsemi

N-CHANNEL

COMPLEX

NO

134 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

DEPLETION MODE

3

84 A

23

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.038 ohm

84 A

UPPER

R-XUFM-X23

ISOLATED

64 pF

NVH4L060N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

269 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

232 A

50.3 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

50.3 A

SINGLE

R-PSFM-T4

TO-247

10.17 pF

NVBG060N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

344 W

PLASTIC/EPOXY

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

231 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

57.5 A

SINGLE

R-PSSO-G7

DRAIN

TO-263CB

10.18 pF

NVD6416ANT4G-VF01

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

71 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

62 A

43 mJ

17 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.081 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

50 pF

AEC-Q101

NTH4L015N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

753 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

859 A

164 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

164 A

SINGLE

R-PSFM-T4

TO-247

e3

39.33 pF

NTBG045N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

425 W

PLASTIC/EPOXY

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

315 A

73.7 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

73.7 A

SINGLE

R-PSSO-G7

1

DRAIN

TO-263CB

e3

30

245

13.78 pF

NVH4L045N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

338 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

312 A

65.5 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

65.5 A

SINGLE

R-PSFM-T4

TO-247

e3

13.76 pF

NVH4L015N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

753 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

859 A

164 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

164 A

SINGLE

R-PSFM-T4

1

TO-247

e3

30

260

39.33 pF

NVHL040N65S3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

358 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

FCH029N65S3-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

463 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

503 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.029 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NVH4L050N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

403 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

830 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.05 ohm

58 A

SINGLE

R-PSFM-T4

TO-247

e3

14 pF

AEC-Q101

NVH040N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

NTHL095N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

284 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.095 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NTHL067N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

266 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

422 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.067 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NVH4L110N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

69 A

380 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.11 ohm

30 A

SINGLE

R-PSFM-T4

TO-247

e3

7.5 pF

AEC-Q101

NTHL125N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

67 A

216 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.125 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NVTFS8D1N08HTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

216 A

113 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0083 ohm

61 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

46 pF

AEC-Q101

NTH4LN067N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

266 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

422 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.067 ohm

40 A

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

NTH4L067N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

266 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

422 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.067 ohm

40 A

SINGLE

R-PSFM-T4

TO-247

e3

NVTFS007N08HLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

347 A

1433 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

71 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

14.1 pF

AEC-Q101

NVTFWS007N08HLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

347 A

1433 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.007 ohm

71 A

DUAL

S-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

14.1 pF

AEC-Q101

NTH4LN095N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

284 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.095 ohm

30 A

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

NTH4LN019N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

328 A

1421 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0193 ohm

75 A

SINGLE

R-PSFM-T4

TO-247

e3

NVBGS1D2N08H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

259 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1500 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00134 ohm

290 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263

e3

30

260

45 pF

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.