Onsemi Power Field Effect Transistors (FET) 1,070

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
NVMFS5C604NLT3G	Onsemi	N-CHANNEL	SINGLE	YES	200 W							1			287 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn) - annealed		287 A			1					e3	30	260
NVMFS5C604NLWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	200 W							1			287 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn) - annealed		287 A			1					e3	30	260
NTMFS5C404NLT3G	Onsemi	N-CHANNEL	SINGLE	YES	167 W							1			339 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Matte Tin (Sn) - annealed		339 A			1					e3	30	260
NTMFS5C646NLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	750 A	185 mJ	93 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0063 ohm	93 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
NVMFS5C612NLT3G	Onsemi	N-CHANNEL	SINGLE	YES	167 W							1			235 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn) - annealed		235 A			1					e3	30	260
NVMFS5C612NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	167 W							1			235 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn) - annealed		235 A			1					e3	30	260
NVMFS5C612NLWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	167 W							1			235 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn) - annealed		235 A			1					e3	30	260
MTB3N60ET4	Onsemi	N-CHANNEL	SINGLE	YES	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN LEAD		3 A								e0		235
NDBA180N10BT4H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	600 A	451 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0033 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN		ULTRA LOW RESISTANCE	TO-263AB	e3	30	245
NTMFS4823NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	85 A	28.8 mJ	30 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.018 ohm	6.9 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260	85 pF
NTMFS4823NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	85 A	28.8 mJ	30 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.018 ohm	6.9 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260	85 pF
NTMFS5844NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	107 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	243 A	48 mJ	61 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.016 ohm	11 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
NTMFS4834NT3G	Onsemi														130 A			FET General Purpose Power					TIN					1		Not Qualified			e3	30	260
NTP5404NRG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	254 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	258 A	1000 mJ	167 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0045 ohm	136 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NTMS4920NR2G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.12 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	136 A	162 mJ	17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0043 ohm	10.6 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	40	260	41 pF
NTD4809NH-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	112.5 mJ	58 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0125 ohm	9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTB75N03-6G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0065 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN		ULTRA LOW RESISTANCE		e3	30	260
NTD24N06-1G	Onsemi	N-CHANNEL	SINGLE	YES	62.5 W						ENHANCEMENT MODE	1			24 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			TIN		24 A			1					e3		260
NTLJD4150PTBG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A		3.4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.135 ohm	2.7 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3		260
NTD4813NH-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	90 A	44.4 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.0259 ohm	40 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
NTD4815NH-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32.6 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	87 A	35.6 mJ	8.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.015 ohm	6.9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTD4815NH-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32.6 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	87 A	35.6 mJ	8.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.015 ohm	6.9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTLJD3119CTAG	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY		20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	18 A		3.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.065 ohm	2.6 A	DUAL	S-PDSO-N6	1		Not Qualified			e3		260
NTMFS4837NHT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	225 A	144 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.008 ohm	10.2 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NTMFS4841NHT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41.7 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	177 A	98 mJ	59 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0116 ohm	13.5 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NTMFS4841NHT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41.7 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	177 A	98 mJ	59 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0116 ohm	13.5 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NTD20N06L-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	128 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.048 ohm	20 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0		235
NTMKE4892NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	210 A	290 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		SILICON			.0026 ohm	26 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NTD6600N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	72 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON		Matte Tin (Sn)	.146 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3	40	260
NTGS3447PT1G	Onsemi														4.7 A			Other Transistors					TIN					1		Not Qualified			e3	30	260
NTD3813N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	34.9 W	PLASTIC/EPOXY	SWITCHING	16 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	114 A	15 mJ	51 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0145 ohm	9.6 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified			e3		260
NTD3813NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	34.9 W	PLASTIC/EPOXY	SWITCHING	16 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	114 A	15 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0145 ohm	9.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD3817N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	25.9 W	PLASTIC/EPOXY	SWITCHING	16 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	78 A	15 mJ	34.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.029 ohm	7.6 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD3817NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	25.9 W	PLASTIC/EPOXY	SWITCHING	16 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	78 A	15 mJ	34.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN SILVER COPPER	.029 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e1		260
NTD4856N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	179 A	180.5 mJ	89 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0068 ohm	13.3 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD4856N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	179 A	180.5 mJ	89 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0068 ohm	13.3 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD4857N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	56.6 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	156 A	144.5 mJ	78 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.008 ohm	12 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD4855NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	66.7 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	197 A	220 mJ	98 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.006 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD4858N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54.5 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	146 A	112.5 mJ	73 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0093 ohm	11.2 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTD4860N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	84.5 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0111 ohm	10.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
NTD4860NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	84.5 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0111 ohm	10.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD4863N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	36.6 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	98 A	60.5 mJ	49 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.014 ohm	9.2 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD4863NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	36.6 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	98 A	60.5 mJ	49 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.014 ohm	9.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD4865N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33.3 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	87 A	50 mJ	44 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0109 ohm	8.5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTB5605T4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	18.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.14 ohm	18.5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e3		260
NTGS3443BT1G	Onsemi														3.7 A			Other Transistors					TIN					1		Not Qualified			e3	30	260
NTMD6N04R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	29 A	245 mJ	5.8 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.034 ohm	4.6 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NTB6410ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	76 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.