Onsemi Power Field Effect Transistors (FET) 1,070

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTP75N03L09G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	1500 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.008 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3		260
NTP75N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0095 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
NTP52N10G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	214 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	156 A	800 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.03 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
NTD32N06-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	93.75 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.026 ohm	32 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD32N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	93.75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.026 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD32N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	93.75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.026 ohm	32 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e3		260
NTB45N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.028 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTB45N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	45 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTB30N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	101 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.046 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	40	260
NTB30N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	101 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.046 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB60N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	454 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.014 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTB75N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0095 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB75N06T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	844 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0095 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD110N02R-001G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0062 ohm	12.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
NTD110N02R-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	110 W	PLASTIC/EPOXY	SWITCHING	24 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.0062 ohm	12.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0		235
NTD110N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	92.5 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0062 ohm	12.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD110N02RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	92.5 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0062 ohm	12.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD20N06-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	170 mJ	20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.046 ohm	20 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
MLD1N06CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR	YES	40 W	PLASTIC/EPOXY	SWITCHING	59 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	80 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.75 ohm	1 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
MTD6N20ET4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A	54 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.7 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD3055-150G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	TIN	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260	40 pF
NTD32N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	93.75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.028 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
NTD4302T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.04 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	722 mJ	8.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.01 ohm	8.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260
NTP18N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.09 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
NTP60N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	454 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.016 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3		260
NTP85N03G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	80 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	85 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0068 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
NTD85N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78.1 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	192 A	85 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0052 ohm	85 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD85N02RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78.1 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	192 A	85 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0052 ohm	85 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD4302G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	722 mJ	8.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.01 ohm	8.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTP2955	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.196 ohm	2.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NIC9N05TS1	Onsemi	N-CHANNEL	SINGLE	YES		UNSPECIFIED			NO LEAD	RECTANGULAR		1				4	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel								UPPER	R-XUUC-N4			Not Qualified					260
NTD5414NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	86.4 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.037 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260		AEC-Q101
NTMFS4108NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.25 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	203 A	450 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.0022 ohm	13.5 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	40	260
NTD14N03R-001	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.13 ohm	11.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e0		235
NTD14N03R-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.13 ohm	11.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD65N03RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	71.7 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0146 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD78N03-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	722.5 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.006 ohm	11.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD78N03	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	722.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN LEAD	.006 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTB65N02RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0105 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTB65N02RT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0105 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTLTD7900ZR2G	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	3.2 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	30 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.026 ohm	6 A	DUAL	R-XDSO-N8	1	DRAIN	Not Qualified	ESD PROTECTED		e3		260
NTP27N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	88.2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	109 mJ	27 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.046 ohm	27 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
MTP12P10G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.3 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e3	40	260
MTP23P06VG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	90 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	81 A	794 mJ	23 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.12 ohm	23 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260
NTD25P03L1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm	25 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NTP18N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	48.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.1 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3	40	260
NTP2955G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	216 mJ	12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.196 ohm	2.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NTP45N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	240 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.026 ohm	45 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	40	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.