Onsemi Power Field Effect Transistors (FET) 1,070

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
NTHD3100CT3	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.08 ohm	2.9 A	DUAL	R-XDSO-C8	1		Not Qualified			e0		235
NTHD3101FT3G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	13 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.08 ohm	3.2 A	DUAL	R-XDSO-C8	1		Not Qualified			e3		260
NTMSD6N303R2SG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.032 ohm	6 A	DUAL	R-PDSO-G8	3		Not Qualified			e3	30	260
NTQD6968N	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN LEAD	.03 ohm	6.2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTB5404NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	258 A	1000 mJ	136 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0045 ohm	136 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB5405NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	800 mJ	116 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0058 ohm	116 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD25P03LRLG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTD4805N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	79 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	175 A	288 mJ	95 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0074 ohm	12.6 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD4805NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	79 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	175 A	288 mJ	95 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0074 ohm	12.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD4808N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54.6 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	126 A	144.5 mJ	63 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0124 ohm	9.8 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTD4808N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54.6 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	126 A	144.5 mJ	63 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0124 ohm	9.8 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD4808NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	126 A	144.5 mJ	63 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0124 ohm	9.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD4810NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	98 mJ	54 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0157 ohm	8.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD4813NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	72 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.024 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
NTD4815N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	87 A	60.5 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.025 ohm	6.9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD4815N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32.6 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	87 A	60.5 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.025 ohm	6.9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTMFS4744NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	47.2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	106 A	286 mJ	53 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.014 ohm	7 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	40	260
NTMFS4744NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	47.2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	106 A	286 mJ	53 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.014 ohm	7 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified			e3	40	260
NTLGF3402PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	11 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.14 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3		260
NTLJS4159NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	28 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.045 ohm	3.6 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
NILMS4501NR2G	Onsemi	N-CHANNEL	CURRENT MIRROR WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	24 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	50 mJ	9.5 A	4	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.016 ohm	9.5 A	BOTTOM	R-PBCC-N4	1	DRAIN	Not Qualified			e3		260
NTD4905NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	264 A	61 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		TIN	.007 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTD4906N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37.5 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	223 A	48 mJ	14 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.008 ohm	14 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
NTD4906N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37.5 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	223 A	48 mJ	14 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.008 ohm	14 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTD4906NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	223 A	48 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.008 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD4909N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	167 A	28 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.012 ohm	8.8 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
NTD4909N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	29.4 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	167 A	28 mJ	41 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.012 ohm	8.8 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTD4910N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	152 A	25.3 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	8.2 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
NTD4913NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	132 A	22 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.015 ohm	7.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTMFS4833NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	288 A	612.5 mJ	191 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.003 ohm	16 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
NTMFS4833NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	288 A	612.5 mJ	191 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.003 ohm	16 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
NTMFS4837NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	47.2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	148 A	242 mJ	74 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin (Sn)	.0075 ohm	10 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	40	260
NTMFS4841NT1G	Onsemi														57 A			FET General Purpose Power					MATTE TIN					1		Not Qualified			e3	30	260
NCV8440STT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.95 ohm	2.6 A	DUAL	R-PDSO-G3		DRAIN	Not Qualified		TO-261AA	e3
NCV8440STT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.95 ohm	2.6 A	DUAL	R-PDSO-G3		DRAIN	Not Qualified		TO-261AA	e3
NTB6411ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	217 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	285 A	470 mJ	77 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.014 ohm	72 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB6411ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	217 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	285 A	470 mJ	77 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.014 ohm	72 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB6412ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	300 mJ	58 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0182 ohm	58 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTB6448ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	76 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTB6448ANT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	76 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTD6416ANL-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	50 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.074 ohm	19 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e3
NTP6411ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	217 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	285 A	470 mJ	77 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.014 ohm	72 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NTP6412ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	167 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	300 mJ	58 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0182 ohm	58 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NTP6448ANG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	305 A	500 mJ	76 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.013 ohm	76 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NDF04N62ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	120 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	2 ohm	4.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NDF10N62ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	300 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.75 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NTMFS4852NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	86.2 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	310 A	360 mJ	155 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0033 ohm	16 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NTMFS4852NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	86.2 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	310 A	360 mJ	155 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.0033 ohm	16 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.