Onsemi Power Field Effect Transistors (FET) 1,070

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
NTP52N10	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	178 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	156 A	800 mJ	52 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.03 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NTB90N02	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	85 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	733 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0058 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTB18N06LT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
NTHC5513T1	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.08 ohm	3.1 A	DUAL	R-XDSO-C8	1		Not Qualified			e0		235
NTB65N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0105 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTP65N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	78 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0105 ohm	7.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
NTD60N02RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		60 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0105 ohm	32 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0		235
NTD60N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		60 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0105 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTHS2101PT1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	UNSPECIFIED	SWITCHING	8 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	7.5 A		5.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.025 ohm	5.4 A	DUAL	R-XDSO-C8			Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTMC1300R2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8.5 A	75 mJ	1.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.09 ohm	2.2 A	DUAL	R-PDSO-G8	1		Not Qualified			e0		235
NTMD2C02R2	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	48 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.043 ohm	5.2 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTMSD6N303R2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	325 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.032 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified			e0		235
NTD25P03L1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.08 ohm	25 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
NTD25P03LT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTY100N10	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	313 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	369 A	500 mJ	123 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.01 ohm	123 A	SINGLE	R-PSIP-T3			Not Qualified		TO-264AA	e0		235
NTB125N02RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113.6 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	250 A	120 mJ	15.9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0062 ohm	95 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-220AB	e0		235
NTB125N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113.6 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	250 A	120 mJ	15.9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0062 ohm	95 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD23N03R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	22.3 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		3.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.06 ohm	3.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD85N02RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78.1 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	192 A	85 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0052 ohm	85 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD85N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78.1 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	192 A	85 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0052 ohm	85 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTMS4101PR2	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.38 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.019 ohm	6.9 A	DUAL	R-PDSO-G8			Not Qualified			e0		235
NTB23N03R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.06 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTB75N03RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	74.4 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	225 A	71.7 mJ	9.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.013 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD110N02RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	92.5 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0062 ohm	12.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD110N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	92.5 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	120 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0062 ohm	12.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD14N03R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.13 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD40N03RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41.7 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.023 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTL4502NT1	Onsemi	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		UNSPECIFIED	SWITCHING	24 V	NO LEAD	SQUARE	ENHANCEMENT MODE	4	32 A	80 mJ		16	CHIP CARRIER	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.013 ohm	11.4 A	QUAD	S-XQCC-N16		DRAIN	Not Qualified			e0		235
NTD14N03RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	20.8 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		11.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.13 ohm	11.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTB25P06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	600 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.082 ohm	27.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTHD2102PT1	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.1 W	UNSPECIFIED	SWITCHING	8 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	4.6 A		3.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.058 ohm	3.4 A	DUAL	R-XDSO-C8			Not Qualified			e0		235
NID9N05CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.181 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED		e0		235
NID9N05CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.181 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED		e0	30	235
NTD2955-1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	216 mJ	12 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.18 ohm	12 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTD2955G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.18 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD20P06L-1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.15 ohm	15.5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD20P06LG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NIF9N05CLT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.69 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.125 ohm	2.6 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e0	30	235
NIF9N05CLT3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.69 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	110 mJ	2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.125 ohm	2.6 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e0	30	235
NTR4501NT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn80Pb20)	.08 ohm	3.2 A	DUAL	R-PDSO-G3			Not Qualified		TO-236AB	e0	30	235
NTR4501NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
NTR4501NT3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0		235
NTLUS4195PZTBG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	17 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.09 ohm	2 A	DUAL	S-PDSO-N3	1	DRAIN	Not Qualified			e3
NTTFS4821NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38.5 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	171 A	55 mJ	57 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0108 ohm	13.5 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
NTTFS4821NTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38.5 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	171 A	55 mJ	57 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.0108 ohm	13.5 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
NTHD4502NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.13 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		2.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	22 ns	-55 Cel	30 ns	MATTE TIN	.085 ohm	2.2 A	DUAL	R-PDSO-F8	1		Not Qualified			e3	30	260	25 pF
NTD40N03R-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41.7 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A		32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.023 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
NTD40N03RG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41.7 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.023 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.