TBGA Flash Memory 248

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		TOP	268435456 bit	1.7 V			e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
N25Q128A13B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A23B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
RC28F640P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm	Not Qualified		TOP	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
PC28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
PC28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified		TOP	1073741824 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
PC48F4400P0VB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	100 ns	1.8	NO
PC28F128P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1	30	260	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
MX25L6435EXCI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	3.3		3/3.3	4	GRID ARRAY, THIN PROFILE		2	Flash Memories	20	1 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		67108864 bit	2.7 V	IT ALSO CONFIGURED AS 64M X 1			40	260	NOR TYPE		8 mm			2.7
PC28F00AG18FE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			1073741824 bit	1.7 V			e1			NOR TYPE	.000185 Amp	10 mm	YES	96 ns	2.7	NO
PC28F128G18FE	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-30 Cel	64	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			134217728 bit	1.7 V			e1			NOR TYPE	.000115 Amp	10 mm	YES	96 ns	2.7	NO
PC28F256G18FE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	128	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			268435456 bit	1.7 V			e1			NOR TYPE	.00013 Amp	10 mm	YES	96 ns	2.7	NO
PC28F512G18FE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	256	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			536870912 bit	1.7 V	SUBGROUP FL1.8V		e1			NOR TYPE	.00016 Amp	10 mm	YES	96 ns	2.7	NO
N25Q128A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	1.7 V			e1			NOR TYPE	.00001 Amp	8 mm			3
N25Q128A11E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	1.7 V			e1			NOR TYPE	.00001 Amp	8 mm			3
W25Q32FVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V						NOR TYPE	.00002 Amp	8 mm			2.7
PC28F128P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
RC28F128J3F75G	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				134217728 bit	2.7 V						NOR TYPE		13 mm		75 ns	3
RC28F640P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm	Not Qualified		BOTTOM	67108864 bit	2.3 V		8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
PC28F640P30TF65B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F512P30BFB	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,20		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified		BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT	16	e1			NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
RC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		TOP	268435456 bit	1.7 V			e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
RC28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified		TOP	1073741824 bit	1.7 V	TOP BOOT	16	e1	30	235	NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
PC28F256P30BFF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
MX25L1606EXCI-12G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	Flash Memories	20	1 mm	85 Cel		2MX8	2M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	86 MHz	6 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3
N25Q512A13G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		512MX1	512M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		536870912 bit	2.7 V			e1	30	260	NOR TYPE	.0005 Amp	8 mm			3
PC28F512P30EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			536870912 bit	1.7 V	SYMMETRICAL BLOCKS	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
MTFC4GACAANA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		52 MHz	14 mm				34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			3.3
N25Q512A11G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
N25Q064A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX1	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		108 MHz	6 mm				67108864 bit	1.7 V			e1			NOR TYPE		8 mm			2.7
N25Q256A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm	Not Qualified	SPI		268435456 bit	2.7 V			e1			NOR TYPE	.00025 Amp	8 mm			3
N25Q512A83G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		536870912 bit	2.7 V			e1			NOR TYPE	.0005 Amp	8 mm			3
N25Q256A83E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V			e1			NOR TYPE		8 mm			3
N25Q128A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q128A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
N25Q256A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE		e1			NOR TYPE	.00002 Amp	8 mm			1.8
RC28F128P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE ; TOP BOOT	8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F256P30BFR	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e1			NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
PC48F4400P0VB0EF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	17 ns	1.8	NO
RC28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
RC48F4400P0VB0EJ	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	Tin/Lead/Silver (Sn/Pb/Ag)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e0	30	235	NOR TYPE	.00042 Amp	13 mm	YES	17 ns	1.8	NO
PC28F320J3F75B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			33554432 bit	2.7 V		4/8		30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	3	NO
N25Q512A83G12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V						NOR TYPE		8 mm			3
N25Q512A83G12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V						NOR TYPE		8 mm			3
N25Q032A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
MX66L51235FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		128MX4	128M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	8 mm			3
N25Q512A13G1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V			e1			NOR TYPE		8 mm			1.8
N25Q128A13E1440E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.