TBGA Flash Memory 248

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F256G08CKCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F256G08CKCABH2-12:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	32GX8	32G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CKCABH2-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABH2-12:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	32GX8	32G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABH2-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F64G08AKCBBH2-12:B	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	8GX8	8G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
MT29F64G08AKCBBH2-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	8GX8	8G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
MT29F64G08AMCBBH2-12:B	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel	8GX8	8G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
MT29F64G08AMCBBH2-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	8GX8	8G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
PC28F128P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1	30	260	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
MT28GU01GAAA1EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm				1073741824 bit	1.7 V			e1					10 mm		96 ns	1.8
MT28GU01GAAA2EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm				1073741824 bit	1.7 V			e1					10 mm		96 ns	1.8
MT28GU256AAA1EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm				268435456 bit	1.7 V			e1					10 mm		96 ns	1.8
MT28GU256AAA2EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm				268435456 bit	1.7 V			e1					10 mm		96 ns	1.8
MT28GU512AAA2EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		2 V	1.2 mm			8 mm				536870912 bit	1.7 V			e1					10 mm		96 ns	1.8
PC28F00AP33EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX16	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm				1073741824 bit	2.3 V	IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1	30	260			10 mm		95 ns	3
PC28F00BP33EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			134217728 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX16	128M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm				2147483648 bit	2.3 V	IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		100 ns	3
PC28F512P33BFD	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm			BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
PC28F512P33EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm				536870912 bit	2.3 V	IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
PC28F512P33TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm			TOP	536870912 bit	2.3 V	TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
SST26VF032B-104I/TD	Microchip Technology	EEPROM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	100	1 mm	85 Cel	4MX8	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V			e1			NOR TYPE	.000045 Amp	8 mm			3
N25Q256A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
N25Q256A83E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
N25Q256A83E1241F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V						NOR TYPE		8 mm			3
N25Q512A83G1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V						NOR TYPE		8 mm			3
MT28GU256AAA2EGC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	16MX16	16M	-40 Cel					BOTTOM			R-PBGA-B64		2 V	1.2 mm		133 MHz	8 mm				268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			10 mm			1.8
MT28GU512AAA2EGC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		2 V	1.2 mm		133 MHz	8 mm				536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			10 mm			1.8
RC28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	2.7	NO
PC28F128J3F75B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			134217728 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
PC28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			33554432 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
PC28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			67108864 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
RC28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
PC28F640P33T85A	Numonyx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		TOP	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1	40	260	NOR TYPE		10 mm		85 ns	3
MX66L1G45GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel	256MX4	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm				1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		e1					8 mm			2.7
XCF128XFT64C	Xilinx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B64	3	2 V	1.2 mm			10 mm	Not Qualified			134217728 bit	1.7 V	ASYNCHRONOUS READ MODE	4	e0	30	225	NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
XCF128XFTG64C	Xilinx	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	53 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM			R-PBGA-B64	3	2 V	1.2 mm			10 mm	Not Qualified			134217728 bit	1.7 V	ASYNCHRONOUS READ MODE	4	e1	30	260	NOR TYPE	.000075 Amp	13 mm	YES	85 ns	1.8	NO
PC28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC28F256P33BFR	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC48F4400P0TB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm			BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1	30	260			13 mm		95 ns	3
PC48F4400P0TB0EH	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm			BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1					13 mm		95 ns	3
RC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
RC48F4400P0TB0EJ	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm			BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1					13 mm		95 ns	3
M58LW032D110ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
MT25QL02GCBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		60 mA	536870912 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel	512MX4	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	SPI		2147483648 bit	2.7 V	MEMORY WIDTH CAN ALSO ORGANISED AS X1		e1			NOR TYPE	.00005 Amp	8 mm			3
MT28F128J3FS-12MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD SILVER	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F320J3FS-11MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD SILVER	YES	BOTTOM			R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	110 ns	2.7	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.