TBGA Flash Memory 248

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT25QL128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			16777216 words		3			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
IS25WP064A-RHLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8388608 words		1.8			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		8MX8	8M	-40 Cel					BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		133 MHz	6 mm				67108864 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MT35XL01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V			e1	30	260			8 mm			3
MT35XL01GBBA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words		3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V			e1	30	260			8 mm			3
MT35XL256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V			e1	30	260			8 mm			3
MT35XL256ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words		3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V			e1	30	260			8 mm			3
MT35XL512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words		3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XL512ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words		3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XU02GCBA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words		1.8			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU256ABA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words		1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU256ABA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words		1.8			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				268435456 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU512ABA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words		1.8			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				536870912 bit	1.7 V			e1	30	260			8 mm			1.8
PC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	33554432 words		1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	13 mm	YES	88 ns	1.8	NO
RC28F128J3F75F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words		3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		75 ns	3
W25Q01JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words		3			8	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
W25Q128JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			1.8
N25Q064A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	8388608 words	COMMON	3			8	GRID ARRAY, THIN PROFILE	BGA24, 5X5, 40			20	1 mm	85 Cel	TOTEM POLE	8MX8	8M	-40 Cel		NO			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	8 mm			3
IS25WP512M-RHLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	1.95 V	1.2 mm	100000 Write/Erase Cycles	112 MHz	6 mm		SPI		536870912 bit	1.7 V				30	260	NOR TYPE	.00026 Amp	8 mm			1.8
MT25QL02GCBB8E12-0SITTR	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		94 mA	268435456 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	BOTTOM/TOP	2147483648 bit	2.7 V						NOR TYPE	.00013 Amp	8 mm			3
IS25WX256-JHLA3	Integrated Silicon Solution	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		70 mA	33554432 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			100	1 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			9
S29GL064N11FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS43	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS42	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS42	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS42	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS43	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS32	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS33	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		4MX16	4M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				67108864 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS43	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	1.65 V						NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS40	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S25HS02GTDZBHB050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	1.7 V						NOR TYPE	.00045 Amp	8 mm			1.8
S25HS02GTDZBHM053	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	1.7 V						NOR TYPE	.001 Amp	8 mm			1.8
S25HL02GTFABHV150	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	2.7 V						NOR TYPE	.000045 Amp	8 mm			3
S25HL02GTFABHV153	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		130 mA	268435456 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	2.7 V						NOR TYPE	.000045 Amp	8 mm			3
S25HL02GTDPBHV153	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI		2147483648 bit	2.7 V						NOR TYPE	.000045 Amp	8 mm			3
S25HL02GTDZBHB050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	2.7 V						NOR TYPE	.000655 Amp	8 mm			3
S25HS02GTDZBHM050	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	1.7 V						NOR TYPE	.001 Amp	8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.