TBGA Flash Memory 248

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28F640J3FS-115MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	115 ns	2.7	NO
MT28F128J3BS-12ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		134217728 bit	2.7 V		4/8	e1		260	NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F128J3BS-12MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		134217728 bit	2.7 V		4/8	e1		260	NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F320J3BS-11ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		33554432 bit	2.7 V			e1	30	260			13 mm		110 ns	2.7
MT28F320J3BS-11MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		33554432 bit	2.7 V			e1		260			13 mm		110 ns	2.7
MT28F640J3BS-115ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX16	4M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		67108864 bit	2.7 V			e1	30	260			13 mm		115 ns	2.7
MT28F640J3BS-115MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		67108864 bit	2.7 V			e1		260			13 mm		115 ns	2.7
MTFC128GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm			1099511627776 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC128GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm			1099511627776 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC16GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm			137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC16GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm			137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC32GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	105 Cel		32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm		200 MHz	14 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC32GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	85 Cel		32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm		200 MHz	14 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC64GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm			549755813888 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC64GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	85 Cel		64GX8	64G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm		200 MHz	14 mm			549755813888 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC8GAMALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm			68719476736 bit	2.7 V			e1	30	260			18 mm			2.7
MX25L51245GXDJ-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		128MX4	128M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		104 MHz	6 mm			536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MTFC8GACAALT-4MITTR	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		52 MHz	14 mm			68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MT25QU256ABA8E12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00018 Amp	8 mm			1.8
MT35XL01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL02GCBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	2147483648 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	2147483648 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL256ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL256ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XU01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.