TBGA Flash Memory 248

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT35XU512ABA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI		536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI		536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI		536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI		536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MTFC16GAKAEEF-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		NO		8	GRID ARRAY, THIN PROFILE	BGA169,14X28,20				.5 mm	105 Cel		16GX8	16G	-40 Cel		NO	GOLD OVER NICKEL	YES	BOTTOM		R-PBGA-B169		3.6 V	1.2 mm		52 MHz	14 mm				137438953472 bit	2.7 V			e4			NAND TYPE		18 mm			2.7	NO
MTFC4GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm				34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MTFC8GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm				68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
PC28F512P30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified		TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
PC28F512P30TFB	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified		TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
MX25L6433FXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		17 mA	16777216 words	3			4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2		20	1 mm	85 Cel		16MX4	16M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e1	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3
W25Q64JVTCIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	1		20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			3.3
M58LT128KSB7ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm			BOTTOM	134217728 bit	1.7 V						NOR TYPE		13 mm		70 ns	1.8
M58LT128KST8ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm			TOP	134217728 bit	1.7 V						NOR TYPE		13 mm		85 ns	1.8
W25N01GVTBIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
W25N01GVTBIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
W25N01GVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
W25N01GVTCIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
RC48F4400P0TB00A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm			BOTTOM	536870912 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10 mm		85 ns	3
MT25QL128ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		134217728 bit	2.7 V			e1	30	260	NOR TYPE	.00005 Amp	8 mm			3
MT25QL128ABA8E14-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA		3			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		134217728 bit	2.7 V						NOR TYPE	.00005 Amp	8 mm			3
IS25WP064A-RHLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		29 mA	8388608 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI		67108864 bit	1.65 V			e1	10	260	NOR TYPE	.000035 Amp	5 mm			1.8
MT25QL512ABB8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			3
RC28F640P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V		8				NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F00AG18AE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	55 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	512	NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified			1073741824 bit	1.7 V		16	e1			NOR TYPE	.000185 Amp	10 mm	YES	96 ns	1.8	NO
RC28F128P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
MTFC16GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3	3.6 V	1.2 mm			14 mm				137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC32GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm				274877906944 bit	2.7 V			e1	30	260			18 mm			2.7
MT25QL256ABA8E12-1SAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QL256ABA8E14-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L12845GXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L12845GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm				134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25U12835FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		104 MHz	6 mm				134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1			NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MX25U51245GXDI0A	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI		536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			1.8
MX66L1G45GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		256MX4	256M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		166 MHz	6 mm				1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
W25Q256JVBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3.3
W25Q32JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		4MX8	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ		e1		260			8 mm			3
W25Q64JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			3.3
W25Q32JVTCIM	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			4194304 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX8	4M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MTFC16GAKAENA-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3	3.6 V	1.2 mm			14 mm				137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MT29F512G08CKCCBH7-6R:C	Micron Technology	FLASH	COMMERCIAL	152	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		64GX8	64G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1.2 mm			14 mm				549755813888 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F512G08CKECBH7-12:C	Micron Technology	FLASH	COMMERCIAL	152	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		64GX8	64G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1.2 mm			14 mm				549755813888 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
IS25WP512M-RHLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	1.65 V			e1	10	260	NOR TYPE	.00026 Amp	8 mm			1.8
MT25QU128ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
W25Q256JWBIM	Winbond Electronics	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm			1.8
W25Q256JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		12 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm			1.8
MX25UM51245GXDIH0	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		250 MHz	6 mm				536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MX25UM51345GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm				536870912 bit	1.65 V								8 mm			1.8
PC28F128P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V		8	e1	30	260	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.