RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC1040CHIPS-SX	Analog Devices	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	19 dB	-55 Cel				20000 MHz	44000 MHz
ADMV7710-SX	Analog Devices	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm		85 Cel	21 dB	-55 Cel				71000 MHz	76000 MHz
AFIC31025GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
HMC1114PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
ADPA7001CHIPS-SX	Analog Devices	WIDE BAND MEDIUM POWER				PHEMT	1	17 dBm		350 mA	COMPONENT	3.5	DIE OR CHIP	50 ohm		85 Cel	12 dB	-55 Cel				50000 MHz	95000 MHz
A3I35D012WGNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY		2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
ADL8111ACCZN-R7	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	10.6 dB	-40 Cel				10 MHz	8000 MHz
ADPA7002C-KIT	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	22		GAAS	1	25 dBm			COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	12 dB	-55 Cel				20000 MHz	44000 MHz
HMC8411TCPZ-EP-R7	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		125 Cel	11 dB	-55 Cel				10 MHz	10000 MHz
ADPA7005AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm			COMPONENT			50 ohm		85 Cel	12 dB	-40 Cel				18000 MHz	44000 MHz
A3I20X050GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
ADPA7002AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC	GAAS	1	25 dBm			COMPONENT	5		50 ohm		85 Cel	13.5 dB	-40 Cel				18000 MHz	44000 MHz
HMC716ALP3ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm	1.38	90 mA	COMPONENT	3,5	LCC16,.12SQ,20	50 ohm		85 Cel	15.5 dB	-40 Cel				3100 MHz	3900 MHz
HMC8412LP2FETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
HMC8412LP2FE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
ADPA7004CHIP-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT	1	18 dBm	1.15		COMPONENT	-0.4,3.5	DIE OR CHIP	50 ohm		85 Cel	13 dB	-55 Cel				40000 MHz	80000 MHz
ADPA7009CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT	1	20 dBm	1.17		COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	17.5 dB	-55 Cel				20000 MHz	54000 MHz
ADL8121ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6		PHEMT	1	32 dBm	1.43		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	15 dB	-40 Cel				25 MHz	12000 MHz
ADL8121ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6		PHEMT	1	32 dBm	1.43		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	15 dB	-40 Cel				25 MHz	12000 MHz
ADL8142ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm	1.38		COMPONENT	2	SOLCC8,.08,20	50 ohm		85 Cel	24.5 dB	-40 Cel				23000 MHz	31000 MHz
ADL8142ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm	1.38		COMPONENT	2	SOLCC8,.08,20	50 ohm		85 Cel	24.5 dB	-40 Cel				23000 MHz	31000 MHz
ADPA1106ACGZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN	1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	33.5 dB	-40 Cel				2700 MHz	3500 MHz
ADPA1106ACGZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAN	1	30 dBm	2.1		COMPONENT	50	LCC32,.2SQ,20	50 ohm		85 Cel	33.5 dB	-40 Cel				2700 MHz	3500 MHz
MAX2644EXT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
BGA428H6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						8 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel
BGA461E6327XTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-30 Cel
BGA615L7E6327XTSA1	Infineon Technologies	NARROW BAND MEDIUM POWER						10 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-30 Cel		LOW NOISE
BGA616E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		150 Cel	18 dB	-65 Cel				0 MHz	2700 MHz
BGA628L7E6327XTMA1	Infineon Technologies	WIDE BAND LOW POWER						6 dBm			COMPONENT			50 ohm		150 Cel	10 dB	-65 Cel				400 MHz	6000 MHz
BGA711L7E6327XTSA1	Infineon Technologies	NARROW BAND MEDIUM POWER						4 dBm			COMPONENT			50 ohm		85 Cel	16.7 dB	-30 Cel		LOW NOISE		2110 MHz	2155 MHz
BGA715L7E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel		LOW NOISE
BGA751L7E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER						4 dBm			COMPONENT			50 ohm		85 Cel	15.8 dB	-30 Cel		LOW NOISE		875 MHz	885 MHz
HMC1126	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm		85 Cel	8 dB	-55 Cel				2000 MHz	50000 MHz
HMC1127	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm		85 Cel	11.5 dB	-55 Cel				2000 MHz	50000 MHz
HMC1131LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	12 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	22 dB	-40 Cel	GOLD NICKEL		e4	24000 MHz	35000 MHz
HMC1131LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	12 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	22 dB	-40 Cel	GOLD NICKEL		e4	24000 MHz	35000 MHz
HMC1144	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm		85 Cel	17 dB	-55 Cel				35000 MHz	70000 MHz
UPC2746TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC1114LP5DE	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC930A	Analog Devices	WIDE BAND MEDIUM POWER						22 dBm	7		COMPONENT			50 ohm		85 Cel	10 dB	-55 Cel				0 MHz	40000 MHz
HMC1087F10	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	CERAMIC	GAN	1	34 dBm	6		COMPONENT	28		50 ohm		85 Cel	11 dB	-40 Cel				2000 MHz	20000 MHz
HMC1099LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC-AUH312-SX	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm		85 Cel	8 dB	-55 Cel				500 MHz	80000 MHz
HMC637A	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm		85 Cel	11 dB	-55 Cel				0 MHz	6000 MHz
HMC5805ALS6	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	GOLD OVER NICKEL		e4	0 MHz	40000 MHz
HMC8400	Analog Devices	WIDE BAND LOW POWER						23 dBm			COMPONENT			50 ohm		85 Cel	11.5 dB	-55 Cel				2000 MHz	30000 MHz
HMC7748	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	8 dBm	6	4000 mA	COMPONENT	12,28	MODULE,6LEAD,2.9	50 ohm		70 Cel	58 dB	-40 Cel				2000 MHz	6000 MHz
HMC8120-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	28		PHEMT	1			250 mA	COMPONENT	4		50 ohm		85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.