RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC907APM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC907A	Analog Devices	WIDE BAND MEDIUM POWER							25 dBm	7		COMPONENT			50 ohm	85 Cel	12.5 dB	-55 Cel				200 MHz	22000 MHz
HMC994APM5E	Analog Devices	WIDE BAND MEDIUM POWER							25 dBm	7		COMPONENT			50 ohm	85 Cel	13 dB	-40 Cel				0 MHz	28000 MHz
HMC994A	Analog Devices	WIDE BAND MEDIUM POWER							25 dBm	7		COMPONENT			50 ohm	85 Cel	12.5 dB	-55 Cel				0 MHz	30000 MHz
HMC998APM5E	Analog Devices	WIDE BAND MEDIUM POWER							27 dBm	7		COMPONENT			50 ohm	85 Cel	13 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	0 MHz	22000 MHz
HMC5805LS6TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	CERAMIC	GAAS		1	17 dBm	7		COMPONENT	10	LCC16,.24SQ,40/32	50 ohm	85 Cel	13.5 dB	-40 Cel					40000 MHz
HMC7885FH18	Analog Devices	WIDE BAND HIGH POWER							36 dBm	2		MODULE			50 ohm	60 Cel	21 dB	-30 Cel				2000 MHz	6000 MHz
ADL7003CHIPS-SX	Analog Devices	WIDE BAND LOW POWER							15 dBm			COMPONENT			50 ohm	85 Cel	11 dB	-55 Cel				50000 MHz	95000 MHz
ADL7003CHIPS	Analog Devices	WIDE BAND LOW POWER							15 dBm			COMPONENT			50 ohm	85 Cel	11 dB	-55 Cel				50000 MHz	95000 MHz
HMC8325-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	22		PHEMT		1			50 mA	COMPONENT	3	DIE OR CHIP	50 ohm	85 Cel	19.5 dB	-55 Cel				71000 MHz	86000 MHz
HMC8325	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	22		PHEMT		1			50 mA	COMPONENT	3	DIE OR CHIP	50 ohm	85 Cel	19.5 dB	-55 Cel				71000 MHz	86000 MHz
HMC8205BF10	Analog Devices	WIDE BAND HIGH POWER							35 dBm			COMPONENT			50 ohm	85 Cel	25 dB	-40 Cel	GOLD OVER NICKEL		e4	300 MHz	6000 MHz
HMC618ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1	10 dBm		65 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	12.5 dB	-40 Cel	MATTE TIN		e3	1200 MHz	2200 MHz
HMC907APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
BGA614E6327HTSA1	Infineon Technologies	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm	150 Cel	17.5 dB	-65 Cel				0 MHz	2400 MHz
PTMA080152MV1AUMA1	Infineon Technologies	WIDE BAND HIGH POWER							42 dBm	10		COMPONENT			50 ohm		29 dB		Tin (Sn)		e3	700 MHz	1000 MHz
PTMA210452ELV1XWSA1	Infineon Technologies	NARROW BAND HIGH POWER							25 dBm	10		MODULE			50 ohm		26.5 dB					1900 MHz	2200 MHz
BGA748N16E6327	Infineon Technologies	NARROW BAND LOW POWER							4 dBm			COMPONENT			50 ohm	85 Cel	18 dB	-30 Cel		LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ		2110 MHz	2170 MHz
HMC1049-SX	Analog Devices	WIDE BAND LOW POWER							18 dBm			COMPONENT			50 ohm	85 Cel	11 dB	-55 Cel				300 MHz	20000 MHz
HMC565LC5TR-R5	Analog Devices	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm	85 Cel	16 dB	-40 Cel				6000 MHz	20000 MHz
HMC637BPM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS		1	25 dBm	7		COMPONENT	12	LCC32,.2SQ,20	50 ohm	85 Cel	12.5 dB	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	7500 MHz
HMC788ACPSZ-EP-PT	Analog Devices	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm	105 Cel	9 dB	-55 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
HMC788ACPSZ-EP-R7	Analog Devices	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm	105 Cel	9 dB	-55 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
HMC902-SX	Analog Devices	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm	85 Cel	17 dB	-55 Cel				5000 MHz	11000 MHz
HMC906A	Analog Devices	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			50 ohm	85 Cel	25 dB	-55 Cel				27300 MHz	33500 MHz
HMC1126-SX	Analog Devices	WIDE BAND LOW POWER							22 dBm			COMPONENT			50 ohm	85 Cel	8 dB	-55 Cel				2000 MHz	50000 MHz
HMC564LC4TR-R5	Analog Devices	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm	85 Cel	14 dB	-40 Cel				7000 MHz	14000 MHz
HMC606LC5TR-R5	Analog Devices	WIDE BAND LOW POWER							15 dBm			COMPONENT			50 ohm	85 Cel	9.5 dB	-40 Cel				2000 MHz	18000 MHz
HMC903-SX	Analog Devices	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm	85 Cel	17 dB	-55 Cel				6000 MHz	18000 MHz
HMC637BPM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS		1	25 dBm	7		COMPONENT	12	LCC32,.2SQ,20	50 ohm	85 Cel	12.5 dB	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	7500 MHz
MMZ25332B4T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		23.5 dB		TIN		e3	1500 MHz	2700 MHz
MAAL-011129-TR3000	M/a-com Technology Solutions	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm	85 Cel	20 dB	-40 Cel	Matte Tin (Sn)		e3	18000 MHz	31500 MHz
HMC1040CHIPS	Analog Devices	WIDE BAND LOW POWER							5 dBm			COMPONENT			50 ohm	85 Cel	19 dB	-55 Cel				20000 MHz	44000 MHz
ADMV7710CHIPS	Analog Devices	WIDE BAND MEDIUM POWER										COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel				71000 MHz	76000 MHz
ADMV7810CHIPS	Analog Devices	WIDE BAND MEDIUM POWER										COMPONENT			50 ohm	85 Cel	18 dB	-55 Cel				81000 MHz	86000 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		2	20 dBm	10		COMPONENT	28		50 ohm	150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
MMZ38333BT1	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm	1.58	1200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		36.3 dB		TIN		e3	3400 MHz	3800 MHz
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
HMC943APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER							20 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel				24000 MHz	34000 MHz
HMC943APM5E	Analog Devices	WIDE BAND MEDIUM POWER							20 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel				24000 MHz	34000 MHz
A3I35D025WGNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm	150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm	150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz
BGU8062J	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm				NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
BGU8051,118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm	1.07	60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
HMC1132PM5ETR	Analog Devices	WIDE BAND MEDIUM POWER							18 dBm	7		COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel				27000 MHz	32000 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.